J334
Abstract: 2SJ334
Text: 2SJ334 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ334 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用 単位: mm z 4V 駆動です。 : RDS (ON) = 29mΩ(標準) z オン抵抗が低い。
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2SJ334
-100A
-10VID
2-10R1B
SC-67
2002/95/EC)
J334
2SJ334
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J334 transistor
Abstract: transistor j334
Text: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 3.2 ± 0 .2 1° 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.) High Forward Transfer Admittance : |Yfs| = 23S(Typ.)
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2SJ334
--60V)
V10ms¿
--50V,
747//H
J334 transistor
transistor j334
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J334 transistor
Abstract: j334 2SJ334
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance
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2SJ334
J334 transistor
j334
2SJ334
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Untitled
Abstract: No abstract text available
Text: TOSHIBA FIELD EFFECT TRANSISTOR SEM ICONDUCTOR TO SH IBA TECHNICAL 2SJ334 DATA SILICON P CHANNEL MOS TYPE L 2- 7 T - MOS V (2SJ334) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE
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2SJ334
2SJ334)
--60V)
20kfi)
2SJ334
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J334 transistor
Abstract: j334 2SJ334 transistor j334
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance
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2SJ334
J334 transistor
j334
2SJ334
transistor j334
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Untitled
Abstract: No abstract text available
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance
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2SJ334
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J334 transistor
Abstract: No abstract text available
Text: TOSHIBA 2SJ334 SILICON P CHANNEL MOS TYPE L2- tt-MOSV 2SJ334 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rq s (ON)= 29mQ (Typ.)
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OCR Scan
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2SJ334
V10msÂ
747//H
J334 transistor
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2SJ334
Abstract: No abstract text available
Text: TOSHIBA 2SJ334 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ334 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 10 ± 0.3 0 3 .2 ± 0.2
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2SJ334
2SJ334
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2SJ334
Abstract: No abstract text available
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) l High forward transfer admittance
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2SJ334
2SJ334
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K2312
Abstract: j378 K2314
Text: L2-7c-MOS V Maximum Rating Application Type No. Id A DC/DC Converter High Current Switching Motor Drive 2SJ360 “2SJ377 •2SJ378 2SJ349 2SJ334 2SJ360 2SK2229 2SK2231 2SK2232 2SK 2311 2SK2233 2SK2266 •2SK2312 •2SK2173 '2SK 2313 '2SK 2267 2SK2200 2SK2201
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O-220
T0-220
O-220FL/SM
O-220AB
2SJ360
2SJ377
K2312
j378
K2314
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TE 004
Abstract: 2SJ334 747h
Text: TOSHIBA 2SJ334 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ334 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS r 10 ± 0 .3 ^ 3 .2 ± 0.2
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2SJ334
TE 004
2SJ334
747h
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J334 transistor
Abstract: transistor j334 J334 2SJ334 2SJ33
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance
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2SJ334
J334 transistor
transistor j334
J334
2SJ334
2SJ33
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J334 transistor
Abstract: J334 transistor j334 2SJ334
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance
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2SJ334
J334 transistor
J334
transistor j334
2SJ334
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Untitled
Abstract: No abstract text available
Text: 2SJ334 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 29 mΩ (typ.) High forward transfer admittance
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J334 transistor
Abstract: 2SJ334 J334
Text: 2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2−π−MOSV 2SJ334 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 29 mΩ (typ.) z High forward transfer admittance
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2SJ334
J334 transistor
2SJ334
J334
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SJ334 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV i <; i33d HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS 4V Gate D rive
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2SJ334
--29m
--100/iA
--60V)
747//H
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5252 F 1009 4-pin
Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4
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mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
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2SK2056
Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Text: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1
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BCE0017B
2SK2056
2SK1603
2sk1603 datasheet
TOSHIBA "ULTRA HIGH SPEED" DIODE 1A
transistor 2SK1603
2SK3561 equivalent
2SK2915 EQUIVALENT
1045y
2SK3569 equivalent
2SK1078
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2SK3567 equivalent
Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2
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BCE0017F
E-28831
BCE0017G
2SK3567 equivalent
2SK3569 equivalent
TPCA*8023
TK8A50D equivalent
2SK2056
2SK3878 equivalent
tpca8023
2SK941 equivalent
2SK3561 equivalent
2SK1603
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2SK3878 equivalent
Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Text: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)
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2SK2963
2SK2962
2SJ508
2SJ509
2SK3670
2SJ313
2SJ338
2SK2013
2SK2162
2SJ360
2SK3878 equivalent
2sk2611
2SK3759
2SK3878
2SK3869
2SK2013
toshiba POWER MOS FET 2sj 2sk
2SK3868
2SK3567 equivalent
2SK2718
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IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional
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device2176
r14153
CR108/D
IRF9310
mosfet cross reference
korea IRFZ44
IRF 949
replacement BUZ 36
philips master replacement guide
2SK2146
IRF540 substitution
MOSFET TOSHIBA 2SK
IRF510 substitution
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2SK4207
Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082B
BCJ0082A
2SK4207
to220sis
TPCA*8023
tk80A08K3
TPC8119
TK40A08K3
2SK4112
ssm3j16fs
2sk3568
TPC8A03
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Jab zener
Abstract: No abstract text available
Text: POWER MOS FET 2. L2-tt-MOSV Vgs=4V drive type Ultra-low on-resistance MOS FET series featuring as high density as 4.4 mcell/inch2 achieved by toshiba microscopic processing technology. • 15% less on-resistance per unit area (In comparison with Rusion) M A X of L 2-7T-MOS IV)
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T0-220
2SJ334
2SK2312
Packag55
2SK1379
Jab zener
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