2SJ324, Search Results

NEC C 324 C

Abstract: TC-7959 2SJ324
Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SJ324,324-Z Pチャネル・パワーMOS FET スイッチング用 2SJ324は，Pチャネル・パワーMOS FETでオン抵抗が低く，またスイッチング特性が優れており，各種アクチュエー

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ324,324-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ324 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2

D1832

Abstract: NEC C 324 C NEC 330 2SJ324 NEC JAPAN
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ324,324-Z SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 1.5 −0.1 solenoid, motor and lamp driver. +0.2 The 2SJ324 is P-channel MOS Field Effect Transistor designed for 5.0 ±0.2

NEC C 324 C

Abstract: TC-7959 2SJ324
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SJ324

Abstract: d1832
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PW610

Abstract: TEA1034 2SK 246 transistor alps ALP Q8060 pw410 2SK 2462 transistor nec Semiconductors Selection Guide X-2462 LF 20v0
Contextual Info: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SJ324 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. in millimeters FEATURES 1 l Low On-state Resistance RDS ~~ = 0.18 Q TYP. (VGS = -10 V,