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    J279

    Abstract: 2SJ279L Hitachi 2SJ 2SJ279S
    Text: 2SJ279C , 2SJ279 Silicon P Channel MOS FET Application DPAK-1 High speed power switching 4 i Features • • • • Low on-resistance H igh speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC


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    2SJ279C 2SJ279® 2SJ279 2SJ279 J279 2SJ279L Hitachi 2SJ 2SJ279S PDF