2SJ23 Search Results

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

Contextual Info: 2SJ232 LD L o w D rive S eries V DSs = 1 0 0 V 2085 P Channel Power M O SFET £.1381 7 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Its height onboard is 9.5mm. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

Contextual Info: 2SJ230 2085 LD L o w D rive S eries V Dss = 6 0 V P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. tisolute M ax im u m R a tin g s a t Ta = 25°C

2SJ231

Abstract: EN3816
Contextual Info: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0

2SJ234

Abstract: Hitachi DSA001651
Contextual Info: 2SJ234 L , 2SJ234(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Vgs2,0v

Abstract: 2SJ230
Contextual Info: Ordering number:EN3815 -, No.3815 _ 2SJ230 P-Channel MOS Silicon FET Very High-Speed Switching Applications Features • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.

2SJ230

Contextual Info: Ordering number : EN3815 SANYO Semiconductors DATA SHEET 2SJ230 P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm.

2SJ231

Contextual Info: Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. unit:mm 2087A [2SJ231] 2.5 1.45 1.0

2SJ231

Abstract: ITR00141 ITR00142 ITR00143 ITR00144 ITR00145 ITR00146
Contextual Info: 注文コード No.N 3 8 1 6 2SJ231 No. 3 8 1 6 三洋半導体ニューズ 52099 新 2SJ231 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ230

Abstract: ITR00132 ITR00133 ITR00134 ITR00135 ITR00136 ITR00137
Contextual Info: 注文コード No.N 3 8 1 5 2SJ230 三洋半導体データシート 2SJ230 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

Contextual Info: 2SJ231 2087 LD L o w D rive S eries VDs s = 1 0 0 V P Channel Power M OSFET •I/3816 F eatu res - Small ON resistance. - Very high-speed switching. - Low-voltage drive. •Meets radial taping. A bsolute Maximum Ratingsmt Ta = 25°C Drain to Source Voltage

2SJ232

Contextual Info: Ordering number:EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm

2SJ233

Contextual Info: Ordering number:EN3818 P-Channel Silicon MOSFET 2SJ233 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm

2SJ230

Contextual Info: Ordering number:EN3815 P-Channel Silicon MOSFET 2SJ230 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. unit:mm

2SJ238

Contextual Info: TOSHIBA Discrete Semiconductors 2SJ238 Field Effect Transistor U n it in m m Silicon P Channel MOSType L2-ti-MOS IV 1, 6 MAX 4 .6 M A .X . High Speed, High Current DC-DC Converter, 0 .4 j t P .0 5 1.7 MAX. 3 Relay Drive and Motor Drive Applications F e a tu r e s

2085A

Abstract: 2SJ233 ITR00159 ITR00160 ITR00161 ITR00162 ITR00163 ITR00164 ta71
Contextual Info: 注文コード No.N 3 8 1 8 2SJ233 三洋半導体データシート 2SJ233 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ234

Contextual Info: 2SJ234 L , 2SJ234(S) Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive

2SJ238

Contextual Info: TOSHIBA 2SJ238 Field Effect Transistor U n it in m m Silicon P Channel MOS Type L2-jc-MOS IV 1 6 MAX. 46M AX. High Speed, High Current DC-DC Converter, 0.4±0.05 1.7 MAX, E3 - Relay Drive and Motor Drive Applications F e a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2SJ232

Abstract: ITR00150 ITR00151 ITR00152 ITR00153 ITR00154 ITR00155
Contextual Info: 注文コード No.N 3 8 1 7 2SJ232 三洋半導体データシート 2SJ232 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・低電圧駆動。

2SJ234

Contextual Info: 2SJ234 L , 2SJ234 S Silicon P Channel MOS FET Application DPAK-1 DPAK High speed power switching Features 4 4 • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source • Suitable for DC – DC convertor, motor drive,

Contextual Info: 2SJ233 LD L o w D riv e S e rie s 2085 VDs s = 1 0 0 V P Channel Power M OSFET E 3818 F e a tu re s • Low ON resistance. • Very high-speed switching. •Low-voltage drive. • Its height onboard is 9.5mm. • M eets radial taping. A b so lu te M ax im u m R a tin g s a t Ta = 25°C

2SJ239

Abstract: 2SJ238 2sJ241 2SJ240 2SJ292 2SJ295 2SJ230 2SJ231 2SJ232 2SJ234
Contextual Info: - 26 - f 33 € tt m € & £ ft . m ffi K E 2SJ230 Hi¥ HS SV MOS P 2SJ231 =& HS SW MOS P E V* V m * (V) * * 48 % 3 I* X P d /P c h (A) * * (W) I gss (max) (A) Vg s (V) w Ip s (min) (max) Vd s (A) (A) (V) (Ta'25°C) tt (min) (max) Vd s (V) (V) (V) -60 DSS

2sj239

Abstract: 2SJ239(TE16L)
Contextual Info: TOSHIBA 2SJ239 Field Effect Transistor Silicon P Channel MOS Type L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance “ Rds(ON) = 0-25Q (Typ.)

2sk1603

Abstract: 2SK2236 2SK1723 2SK2222 2sk538 2SK180S 2SK584 2SK1882 2SK1513 2sk1915
Contextual Info: Power MOS FET Type No. index Main Characteristics Type No. Series Nam e, Package Type Voss V 2SJ115 2SJ123 2SJ126 2SJ147 2SJ183 2SJ200 2SJ201 2SJ224 2SJ238 2SJ239 2SJ240 2SJ241 2SJ304 2SJ315 2SJ312 2SJ313 2SJ334 2SJ338 2SJ349 2SJ359 2SJ360 2SJ377 2SJ378