2SD880 TRANSISTOR Search Results

2SD880Y

Abstract: 2sD880 TRANSISTOR 2SD880 2SD880-G
Contextual Info: MCC 2SD880 2SD880-Q 2SD880-Y 2SD880-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • With TO-220 package Power amplifier applications x Case Material: Molded Plastic.

UTC2SD880

Abstract: 2sd880 equivalent 2SB834 2SD880 QW-R203-013
Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

2sd880y

Contextual Info: MCC TM Micro Commercial Components 2SD880 2SD880-Q 2SD880-Y 2SD880-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

2SD880L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

2SD880L

Abstract: 2SD880 2sd880 equivalent 2sd880 datasheet 013 transistor 2SB834 QW-R203-013 transistor 2sd880 hfe-300 utc 2SD880L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=300 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

2SD880L

Abstract: 2sd880 equivalent utc 2SD880L QW-R203-013 2SB834 2SD880 power transistor audio amplifier 500 watts
Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

2sd880

Abstract: 2SD880L utc 2SD880L 2SD880, 1.5 power dissipation transistor 2sd880 013 transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SD880 NPN SILICON TRANSISTOR N PN EPI T AX I AL T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SD880 is designed for audio frequency power amplifier applications. ̈ FEAT U RES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A)

2SD880

Abstract: 2sD880 TRANSISTOR 2SD880L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

2SD880

Abstract: 2sD880 TRANSISTOR 2sd880 equivalent
Contextual Info: 2SD880 2SD880 TRANSISTOR NPN TO—220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 3. EMITTER 1.5 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

Contextual Info: MCC TM Micro Commercial Components 2SD880-Q 2SD880-Y 2SD880-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Halogen free available upon request by adding suffix "-HF"

2SD880Y

Abstract: SILICON TRANSISTOR CORP 2SD880-Y 2sd880gr
Contextual Info: MCC TM Micro Commercial Components 2SD880-Q 2SD880-Y 2SD880-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

2sd880y

Abstract: 100-200Q
Contextual Info: MCC TM Micro Commercial Components 2SD880-Q 2SD880-Y 2SD880-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

2SD880Y

Contextual Info: MCC TM Micro Commercial Components Features • • • • • 2SD880-Q 2SD880-Y 2SD880-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Halogen free available upon request by adding suffix "-HF"

Contextual Info: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae

2sd880 equivalent

Abstract: 2SD880 2sd880 datasheet 2SB834
Contextual Info: Inchange Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications

2SB834

Abstract: 2SD880
Contextual Info: SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter

2SD880

Abstract: 2sd880 equivalent 2SB834 416W
Contextual Info: SavantIC Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications

2SB834

Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
Contextual Info: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1

2sd880 equivalent

Abstract: 2SD880, 1.5 power dissipation 2SD880 2sD880 TRANSISTOR
Contextual Info: DC COMPONENTS CO., LTD. 2SD880 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66)

2SB834

Abstract: 2SD880 2sb834 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB834 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complement to Type 2SD880