EE16
Abstract: 5A transistor 2SD826 DC-DC EE13 ITR09924 core EE16 60309E EE16 9V transistor C 5386 EE16 case
Text: 2SD826 Ordering number : EN538F SANYO Semiconductors DATA SHEET 2SD826 NPN Epitaxial Planar Silicon Transistor 20V / 5A, Transistor for Flash Circuit Features • • • Low saturation voltage. High hFE. Large current capacity. Specifications Absolute Maximum Ratings at Ta=25°C
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2SD826
EN538F
100ms,
150se.
EE16
5A transistor
2SD826
DC-DC EE13
ITR09924
core EE16
60309E
EE16 9V
transistor C 5386
EE16 case
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EE16
Abstract: sanyo ni-cd ee-16 core EE16 pulse trans EE16 9V EE16 4 3 EE16 5V
Text: Ordering number:ENN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009B [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6
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ENN538E
2SD826
2009B
2SD826]
100ms,
O-126
150ctric
EE16
sanyo ni-cd
ee-16
core EE16
pulse trans
EE16 9V
EE16 4 3
EE16 5V
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2SD826
Abstract: EE13 EE16 2sD826 transistor
Text: Ordering number:EN538E NPN Epitaxial Planar Silicon Transistor 2SD826 20V/5A Switching Applications Features Package Dimensions • Low saturation voltage. · High hFE. · Large current capacity. unit:mm 2009A [2SD826] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8
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EN538E
2SD826
2SD826]
O-126
2SD826
EE13
EE16
2sD826 transistor
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2SD826
Abstract: 2SD82
Text: Inchange Semiconductor Product Specification 2SD826 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain ・Large current capacity APPLICATIONS ・For 3V, 6V strobe applications PINNING
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2SD826
O-126
2SD826
2SD82
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2SD826
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SD826 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain ·Large current capacity APPLICATIONS ·For 3V, 6V strobe applications PINNING PIN
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2SD826
O-126
2SD826
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2sc5694
Abstract: TO-126LP 2sd1683 2SC5607 2sa1770 2SA2023 2SA2203 sanyo, 2sa2039 2sa2039 2SC5707
Text: Low-Saturation Voltage Transistors Shortform Table Lead Type Package Series CONTENTS • ■ ■ ■ ■ ・ ・ ・ ・ ・ ・ ・ Packages Quiｃｋ selection guide Road Map Application Example Lineup according to packages SPA NP NMP MP TP FLP
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O-126
O-126ML
O-126LP
2SB1165
2SD1722
2SB1166
2SD1723
2SB1167
2sc5694
TO-126LP
2sd1683
2SC5607
2sa1770
2SA2023
2SA2203
sanyo, 2sa2039
2sa2039
2SC5707
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN538E 2SD826 NPN Epitaxial Planar Silicon Transistor SANYO 20V/5A Switching Applications Features . Low saturation voltage. . High hFE. . Large current capacity. Absolute Maxi m m Ratings at Ta=25°C Collector-to-Base Voltage CBO Collector-to-Emitter Voltage vCEO
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EN538E
2SD826
100ms,
H707L,
0RA03E
2SD826
1390T
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5277K1
Abstract: 2SD826 EE-16 core ee16 lnk EN538E
Text: Ordering number: EN538E 2SD826 N0.538E NPN Epitaxial Planar Type S i l i c o n Transistor 3V, 6V S t r o b e A p p l i c a t i o n s Features . Low saturation voltage. . High hFE, . Large current capacity. Absolute Maximum Katings at Ta=25°C Collector-to-Base Voltage
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EN538E
2SD826
100ms,
5277K1
2SD826
EE-16 core
ee16 lnk
EN538E
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transistor 2SB1201
Abstract: transistor 2SD1207 2SA1699 2SB1205 transistor 2SD1724 transistor 2sB892 V20C 2sc4734 2SA1249 BMA250
Text: T P T i n y Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possibleto make electronic equipment smaller and slimmer.
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O-126
T0-220AB
2SA1641
2SC4306
2SSA1830
2SC4734
2SA1749
2SC4564
min2000
2SD894
transistor 2SB1201
transistor 2SD1207
2SA1699
2SB1205
transistor 2SD1724
transistor 2sB892
V20C
2sc4734
2SA1249
BMA250
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2SB612K
Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
Text: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]
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T0-126ML)
T0-126ML
O-126
2SD826
2SB559
2SD439
2SB632K
2SB612K
2SB986
2SD1348
2SA1380
2SC3503
2sc4675
transistor TO-126 Outline Dimensions
2SA1249
2sa1507 Sanyo Semiconductor
2sc3417
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transistor 2SB1142
Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated
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0-126M
T0-126ML)
T0-126ML
O-126
MT950123TR
transistor 2SB1142
sanyo transistor tt series
2SB612K
2SB1143
2SA1750
2sc3788
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2sa1562
Abstract: No abstract text available
Text: TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,TO-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.
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O-126
O-220AB
Tc-25^
2SD1800
2SA1731
2SC4522
2SA1732
2SC4523
2SD1153
MT980522TR
2sa1562
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2SB1205
Abstract: 2SB1143 2sc4675
Text: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.
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2SB764/2SD863
2SB892/2SD1207*
2SB927/2SD1247*
2SB985/2SD1347*
2SB1131*
2SD1145
2SA1641/2SC4306*
2SB1201/2SD1801*
2SB1202/2SD1802*
2SB1203/2SD1803*
2SB1205
2SB1143
2sc4675
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2SB1205
Abstract: 2SD1801
Text: SAfiYO L O W - S A T U R A T IO N V O L T A G E TR S E R I E S Small-Signal Transistors.NO. 1 The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power amplifiers, electrical equipment.
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T0-126LP
MT95C123TR
2SB1205
2SD1801
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2SB1267
Abstract: No abstract text available
Text: Continued from previous page Absolute maximum ratings Type No. Package type Electrical characteristics Ta = 25 "C VCB(sat) max @ 1C •IB Applications VCBO (V) VCEO to (V) (A) PC (W ) (2 ) VCE(sat) fr @ Vce hre @ V C E lC max (mV) 1C (A) (mA) te hFE XSF
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2SC4727
2SC4728
2SC4729
2SD1235
T0220
2SDI236L
2SD1237L
2SA1469
2SB1267
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2SB1205
Abstract: 2S81119 2Sk222 2sa128
Text: Low-Noise Transistors Absolute maximum ratings Device Package type Application VcBO V VCEO (V) Ve BO (V) Iç (mA) Pc (mW) rical characteristics (Ta = 25 deg. C) hFE @ V c E 'lc T| (deg. C) I c b o max fiiA l <T @ Vcc * Ic Vcs (V) &FE VCE (V) lc (mA) Vcf
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TQ220ML
T0220ML
T03PB
2SB1205
2S81119
2Sk222
2sa128
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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