2SD600
Abstract: 2SD600K 2sd_600 to126 2sd600k
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION •With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier
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2SD600
2SD600K
O-126
2SB631/631K
VCEO100/120V
2SD600
500mA
2SD600K
2sd_600
to126 2sd600k
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2sb631 transistor
Abstract: 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631 DESCRIPTION •High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600
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2SB631
-100V
2SD600
-50mA
-500mA
2sb631 transistor
2sd600* transistor
2SB631
2SD600
high gain low voltage PNP transistor
transistor 2sb631
transistor PNP 10A
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2sb631
Abstract: 2sb631k
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION •With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity
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2SB631
2SB631K
O-126
2SD600/K
-100/-120V
2SB631
-50mA
2sb631k
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2SB631
Abstract: 2SB631K
Contextual Info: JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity
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2SB631
2SB631K
O-126
2SD600/K
-100/-120V
2SB631
-50mA
2SB631K
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2SB631
Abstract: 2SB631K
Contextual Info: Inchange Semiconductor Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity
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2SB631
2SB631K
O-126
2SD600/K
-100/-120V
2SB631
-500mA
-50mA
2SB631K
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2SD600
Abstract: 2sd600* transistor hFE is transistor 2sd600 transistor 2SB631 2sb631 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD600 DESCRIPTION •High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631
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2SD600
2SB631
500mA
2SD600
2sd600* transistor
hFE is transistor
2sd600 transistor
2SB631
2sb631 transistor
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2SD600
Abstract: 2sd600k
Contextual Info: Inchange Semiconductor Product Specification 2SD600 2SD600K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier
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2SD600
2SD600K
O-126
2SB631/631K
VCEO100/120V
2SD600
500mA
2sd600k
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2SB631K
Abstract: D 600K
Contextual Info: Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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ENN346G
2SB631,
631K/
2SD600,
00V/120V,
100/120V,
2009B
631K/2SD600,
O-126
2SB631K
D 600K
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transistor D600k
Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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ENN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
transistor D600k
transistor d600
D600K
D600k transistor
transistor b631
b631k
b631 transistor
transistor B631K
k b631k
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2sb631 transistor
Abstract: transistor b631 transistor D600k 2sb631 2sd600
Contextual Info: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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Original
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ENN346G
2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
2sb631 transistor
transistor b631
transistor D600k
2sd600
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transistor D600k
Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
Contextual Info: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.
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2SB631
631K/2SD600
00V/120V,
100/120V,
2009B
2SB631,
631K/2SD600,
O-126
transistor D600k
transistor d600
transistor b631
D600k transistor
transistor B631K
D600K
b631 transistor
B631K
D600
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D600K
Abstract: B631K PNP 2SD 2SB631 631k D600K to 126
Contextual Info: Ordering number:EN34SG 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications F e a tu re s • High breakdown voltage Vceo 100/120V, High current 1A. • Low saturation voltage, excellent hpE linearity.
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OCR Scan
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EN34SG
2SB631
631K/2SD600
00V/120V,
100/120V,
2SB631,
2SB631K,
D600K
B631K,
D600K
B631K
PNP 2SD
631k
D600K to 126
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2SB612K
Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
Contextual Info: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]
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OCR Scan
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T0-126ML)
T0-126ML
O-126
2SD826
2SB559
2SD439
2SB632K
2SB612K
2SB986
2SD1348
2SA1380
2SC3503
2sc4675
transistor TO-126 Outline Dimensions
2SA1249
2sa1507 Sanyo Semiconductor
2sc3417
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2SC308
Abstract: 2SA1699 2SA1392
Contextual Info: S m a l 1- s i g n a l SA\YO Transistors For low noise, h i g h v o l t a g e a n d g e n e r a l use We have other smal 1-signal transistors which are not included in any classified types nor packages in this document. They are for low noise, high voltage and general use.
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OCR Scan
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SC-51
2SA1683
2SC4414
2SA1392
2SC3383
T0-126
2SA1450
2SB631,
2SD600,
O-126
2SC308
2SA1699
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transistor 2SB1142
Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
Contextual Info: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated
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OCR Scan
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0-126M
T0-126ML)
T0-126ML
O-126
MT950123TR
transistor 2SB1142
sanyo transistor tt series
2SB612K
2SB1143
2SA1750
2sc3788
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PDF
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2SA1249
Abstract: 2SB63
Contextual Info: S m a l 1- s ig n al ÄMIVO Transistors For low noise, h ig h v o l t a g e and general use ffe have o t h e r s m a l l - s i g n a l low n o i s e , t r a n s i s t o r s which a r e not inc lud ed in any c l a s s i f i e d types nor packages in t h i s document.
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OCR Scan
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2SA1016
2SC2362,
2SA1391
2SC3382
SC-51
O-126
2SA1450
2SC3708
2SB63
2SD600
2SA1249
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PDF
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2SD675
Abstract: 2sd676 2SD674 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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OCR Scan
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2SD669
7c-25-C)
2SD673
2SD674
2SD675
2SD676
2SD675
2SD673
2SB631
2SD600
2SD612
2SD613
2SD638
2SD639
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PDF
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2SA1392
Abstract: 2SA1450 2SA1683 2SB631 2SB632 2SB632K 2SC3383 2SC3708 2SC4414 2SD600
Contextual Info: General-application Transistors Absolut« maximum ratings Type No. Package typ Applications VCBO 00 Veto Electrical characteristics Ta = 25 t ICBOmax @VCB te PC (V) VEDO 00 (A) (W ) leso max (? ) UA) tra ve t 1C hFE® VCE- 1C VCB CO hFE VCE 00 VCE (V)
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OCR Scan
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2SA1683
2SC4414
2SA1392
2SA1450
2SC3383
2SC3708
FC140
2SC4452
2SA1416
2SAI417
2SB631
2SB632
2SB632K
2SD600
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PDF
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AUDIO AMPLIFIER
Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
Contextual Info: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr
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OCR Scan
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FC150
2SC3651
2SC3650
2SA1766
2SC4705
2SC4390
2SK596
2SK546
2SA1813/2SC4413)
2SK304
AUDIO AMPLIFIER
audio amplifier POWER TRANSISTORS
2SK404
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PDF
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RTIP144C
Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.
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OCR Scan
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2SB1186
2SB1186A
2SA1304
2SA1306
2SA1305
2SB1274
2SB1015
2SB1133
2SB1287
2SB1185
RTIP144C
RTIN141C
RTIN141S
2SD947 equivalent
2SD612K
equivalent of transistor 2SA1115
RTIN241C
rtip241
2sd880 equivalent
RTIN140C
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PDF
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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OCR Scan
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4000HÂ
2SB415
2SB 710
2sc1061
2sd524
2sb504
HD68P01
2sb507
2sa762
2sc827
2SC1362
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PDF
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d1878
Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258
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OCR Scan
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A1527
A1528
A1537
A1540
A1573
A1574
A1575
A1580
A1590
A1607
d1878
D1887
C4106
D1880
D1825
transistors D1878
c3987
C4161
D1651
k1459
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PDF
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650nm laser diode 200mw
Abstract: DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo
Contextual Info: SANYO Laser Diodes support advanced information society. SANYO has a wide range of laser diodes from 405nm to 830nm in the line-up. SANYO laser diodes are characterized by high power models for DVD±R/RW/-RAM and CD-R. There are also 635nm models for industrial applications such as laser display, bar-code scanners,
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Original
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405nm
830nm
635nm
808nm
650nm laser diode 200mw
DL-6147-040
laser diode DVD 100mw
DL-3148-037
DL-3146-151
DL-3147-060
DL-3148-025
DL-7147-201
DL-3148-023 CIRCUIT
iso 14001 sanyo
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PDF
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DL-3147-060
Abstract: 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v
Contextual Info: LASER DIODE '05-03 Tottori SANYO Electric Co., Ltd Photonics Business Unit Laser sales Section 1-1-10 Ueno, Taito-ku, Tokyo, 110-8534, JAPAN Tel : +81-3-3837-6272 Fax : +81-3-3837-6390 Photonics Business Unit 5-318, Tachikawa-cho, Tottori-city, Tottori, 680-8634 JAPAN
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Original
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405nm
980nm
DL-3147-060
405nm 5mW laser diode
DL-7147-201
new focus photodiode 1514
Diode Laser Red 650nm 6mm 5V 5mW
DL-5146-251
DL-3148-023 CIRCUIT
650NM laser diode 5mw
DL-3147-260
650nm 5mw module 6mm 5v
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PDF
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