2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1470 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 160 V Collector to emitter voltage VCEO 160 V
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2SD2222
2SB1470
2SB1470
2SD2222
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2SB1470
Abstract: 2SD2222 IC7A TO-3PL
Text: Inchange Semiconductor Product Specification 2SB1470 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification
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2SB1470
2SD2222
-160V;
2SB1470
2SD2222
IC7A
TO-3PL
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 5.0±0.3 3.0 (10.0) (6.0) (2.0) (4.0) 20.0±0.5 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
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2SB1470
2SD2222
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2SD2222
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160
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2SB1470
2SD2222
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2SD2222
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type darlington Unit: mm • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector-base voltage Emitter open VCBO 160 V Collector-emitter voltage (Base open) VCEO 160 V Emitter-base voltage (Collector open)
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2SD2222
2SB1470
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2SD2222
Abstract: 2SB1470
Text: Product Specification www.jmnic.com 2SD2222 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SB1470 ・High forward current transfer ratio hFE ・Low saturation voltage VCE sat ・DARLINGTON APPLICATIONS ・For power amplification
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2SD2222
2SB1470
2SD2222
2SB1470
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2SB1470
Abstract: 2SD2222
Text: SavantIC Semiconductor Product Specification 2SD2222 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SB1470 ·High DC current gain ·Low saturation voltage VCE sat ·DARLINGTON APPLICATIONS ·For power amplification PINNING
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2SD2222
2SB1470
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2SD2222
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1470 5.0±0.3 3.0 26.0±0.5 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open)
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2SD2222
2SB1470
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2SD2222
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 2.0 (1.5) 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 • Absolute Maximum Ratings TC = 25°C 5.45±0.3 Parameter Symbol Rating
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2SB1470
2SD2222
2SB1470
2SD2222
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2SB1470
Abstract: 2SD2222
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1470 Unit: mm 4.0 Parameter Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 160 V Emitter to base voltage
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2SD2222
2SB1470
2SB1470
2SD2222
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2SB1470
Abstract: 2SD2222 IC-303
Text: Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB1470 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO 160 V Collector to emitter voltage VCEO 160 V
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2SD2222
2SB1470
2SB1470
2SD2222
IC-303
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2SB1470
Abstract: 2SD2222
Text: SavantIC Semiconductor Product Specification 2SB1470 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification
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2SB1470
2SD2222
-160V;
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2SD2222
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2sb1470
Abstract: No abstract text available
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 • Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating Unit VCBO −160 V Collector to emitter voltage VCEO −160
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2SB1470
2SD2222
2sb1470
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2SB1470
Abstract: No abstract text available
Text: Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SD2222 1.0±0.2 Unit Collector-base voltage Emitter open VCBO −160 V Collector-emitter voltage (Base open) VCEO −160 V Emitter-base voltage (Collector open)
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2SB1470
2SD2222
2SB1470
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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2sd2229
Abstract: 2SD2191 2SD2180 2SD2181 2SD2182 2SD2183 2SD2184 2SD2185 2SD2188 2SD2192
Text: - 284 - m *+ 1-1 /u ^ u«UbU _ V 2SD2180 2SD2181 2SD2182 2SD2183 2SD2184 2SD2185 2SD2188 2SD2191 2SD2192 2SD2193 2SD2198 2SD2199 2SD2200 2SD2201 tfiT t&T t&T tar O— A O— A □— A Bi = # Hi# =#* — 2SD2203 2SD2209 2SD2210 2SD2213 2SD22U 2SD2215 2SD2215A
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2SD2180
2SD2181
2SD2182
2SD2183
2SD2184
2SD2185
2SD2188
2SD2216
MP-45)
2SD2217
2sd2229
2SD2191
2SD2192
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