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    2SD2211 Search Results

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    2SD2211 Price and Stock

    ROHM Semiconductor 2SD2211T100Q

    TRANS NPN 160V 1.5A MPT3
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    DigiKey 2SD2211T100Q Cut Tape 920 1
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    2SD2211T100Q Digi-Reel 920 1
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    ROHM Semiconductor 2SD2211T100R

    TRANS NPN 160V 1.5A MPT3
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    ROHM Semiconductor 2SD2211T100

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    Quest Components 2SD2211T100 175
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    2SD2211 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2211 Kexin Power Transistor Original PDF
    2SD2211 ROHM Original PDF
    2SD2211 ROHM Power Transistor (160V , 1.5A) Original PDF
    2SD2211 TY Semiconductor Power Transistor - SOT-89 Original PDF
    2SD2211 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2211 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2211 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2211 ROHM Power Transistor (160V 1.5A) Scan PDF
    2SD2211Q ROHM Power Transistor (160V , 1.5A) Original PDF
    2SD2211T100Q ROHM Power Transistor (160 V , 1.5 A) Original PDF
    2SD2211T100R ROHM Power Transistor (160 V , 1.5 A) Original PDF

    2SD2211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1MA160

    Abstract: 2SD2211 80MHZ 2SD2211 hfe
    Text: Transistors SMD Type Power Transistor 2SD2211 Features High breakdown voltage. BVCEO = 160V Low collector output capacitance. (Typ. 20pF at VCB = 10V) High transition frequency.(fT = 80MHZ) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage


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    PDF 2SD2211 80MHZ) 200msec 30MHz 1MA160 2SD2211 80MHZ 2SD2211 hfe

    2SD2211

    Abstract: 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


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    PDF 2SD2211 2SD1918 2SD1857A 2SD2211 80MHZ) 2SB1275 2SB1236A. 2SB1236A 2SD1857A 80MHZ T100

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Power Transistor 2SD2211 SOT- 89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1


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    PDF 2SD2211)

    2SD2211

    Abstract: 2SD2211 hfe 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A zExternal dimensions (Unit : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


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    PDF 2SD2211 2SD1918 2SD1857A 80MHZ) 2SB1275 2SB1236A. 2SD2211 2SD2211 hfe 2SB1236A 2SD1857A 80MHZ T100

    Model 450

    Abstract: 2SD2211
    Text: SPICE PARAMETER 2SD2211 by ROHM TR Div. * 2SD2211 NPN BJT model * Date: 2006/11/20 .MODEL 2SD2211 NPN + IS=450.00E-15 + BF=101.86 + VAF=9.5235 + IKF=2.0711 + ISE=450.00E-15 + NE=1.4191 + BR=22.448 + VAR=100 + IKR=.96913 + ISC=31.986E-12 + NC=1.3523 + NK=.68874


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    PDF 2SD2211 Q2SD2211 00E-15 986E-12 067E-3 88E-12 705E-12 8667E-9 Model 450 2SD2211

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD2211 SOT- 89 • Features Unit:mm 1.50 ±0.1 4.50±0.1 ● High breakdown voltage. 1.80±0.1 2.50±0.1 4.00±0.1 ● Low collector output capacitance. ● High transition frequency . 0.44±0.1 0.40±0.1 0.53±0.1


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    PDF 2SD2211)

    2SD1763A

    Abstract: 2sd2400a 2SB1186A 2SB1275 2SB1236A 2SB1569A 2SD1857A 2SD1918 2SD2211 2SB1569
    Text: Transistors 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A 96-612-A58 (96-744-C58) 277


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    PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A 96-612-A58) 2SD1763A 2SB1186A 2SB1569

    2SB1236A

    Abstract: 2SB1275 2SD1857A 2SD1918 2SD2211 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A !External dimensions (Units : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


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    PDF 2SD2211 2SD1918 2SD1857A 2SD2211 80MHZ) 2SB1275 2SB1236A. 2SB1236A 2SD1857A 80MHZ T100

    113 marking code transistor ROHM

    Abstract: DTDS14GP DTB133HKA rkm transistor 2SC5274 datasheet FMC1A rkm 33 transistor FMC1A rkm 24 DTD133HKA
    Text: Abbreviated markings on mini-mold transistors Transistors Abbreviated markings on mini-mold transistors !MPT3 labels The label on the MPT3 packages indicates the product, hFE rank, and month of manufacture using 4 letters. Codes B and AF indicate products.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1


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    PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A

    d1763a

    Abstract: d2400a 1763A 2SD1763A D1763 d1857a B 1186a 2SB1186A 2sb1569a 1569a
    Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor —160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •F e a t u r e s 1 ) High breakdown voltage. (BV ceo~ — 160V) 2 ) Low collector output capacitance. (Typ. 30pF at V cb= 1 0 V )


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    PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A 2SD1918/2SD1857A/2SC d1763a d2400a 1763A 2SD1763A D1763 d1857a B 1186a 1569a

    d2400a

    Abstract: transistor d2400a 2SD1916 2sd2400a 2SD1763A 2SB1275 2SD2211 SD1763A 2SB1186A 2SB1236A
    Text: 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A Transistors I Power Transistor — 160V, — 1.5A 2SB1275 / 2SB1236A / 2SB1569A / 2SB 1186A •A b s o lu te m axim um rating s ( T a = 2 5 t) • F e a tu re s


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    PDF 2SB1275 2SB1236A 2SB1569A 2SB1186A 2SD2211 2SD1918 2SD1857A 2SD2400A 2SD1763A d2400a transistor d2400a 2SD1916 2SD1763A SD1763A

    2SB1275

    Abstract: 2SD1857A 2SD1918 2SD2211 T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD221112SD191812SD1857A •Features 1) High breakdown voltage.(BVcEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at Vcb = 10V) 3) High transition frequency.(fr = 80MHz) 4) Complements the 2SB1275/2SB1236A.


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    PDF 2SD2211 2SD1918 2SD1857A 2SD221112SD191812SD1857A 80MHz) 2SB1275 /2SB1236A. 100ms 2SD1857A T100

    transistor 2SB 367

    Abstract: Power Transistors SIT sit transistor
    Text: 2SD2211/2SD1918F5 b ÿ > ' y X £ /Transistors 2 S D 2 2 1 1 I f c E C 2 5 U l 9 1 O r 5 f ^ 4 r y 7 / ^ l / - ^ N P N b ? > y Z $ Epitaxial Planar NPN Silicon Transistor iSJiîS^^JiSififfl/Low Freq. Power Amp. * W f i ri'ÜEI/'Dim ensions Unit : mm 1) i o i i l l i J £ T '^ 5 o


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    PDF 2SD2211 2SD2211/2SD1918F5 /2SD1918F5 transistor 2SB 367 Power Transistors SIT sit transistor

    2SD157

    Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
    Text: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589


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    PDF 2SD1592 2SD1141 2SD1446 2SD1237L 2SC3692 2SD1271A 2SD1833 2SD1668 2SD1271 2SD157 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239

    NEC k 3654

    Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
    Text: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6


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    PDF 2SC3643 2SC3536 2SC3644 2SC3535 2SC3737 2SC3738 NEC k 3654 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES

    Untitled

    Abstract: No abstract text available
    Text: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390


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    PDF Ta-25 2SB1132 2SA1900 2SB1184 2SB1182 2SB1181 OT-89)

    KY 719

    Abstract: 122JK TB163TK TB143TK
    Text: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75


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    PDF 2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 2SA1036K 2SA1037AK 2SA1037AKLN 2SA1455K RU101 KY 719 122JK TB163TK TB143TK

    rkm 33 transistor

    Abstract: bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor
    Text: Transistors Abbreviated label symbols on mini molded type Abbreviated label symbols on mini molded type •E M T 3 and UMT3 labels On general transistors, the product and hpE rank are in­ dicated by 2 or 3 letters. On digital transistors, the product type is indicated by a 2-digit number.


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    PDF FMA10A FMA11A IMB10A IMB11A IMB16 IMB17A IMD10A IMD14 IMD16A IMH10A rkm 33 transistor bkd transistor DTD133HKA BKD C6 DTB133HKA Transistor BJD 2SA1885 rkm 20 transistor 2SC5274 rkm transistor

    TA143E

    Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
    Text: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0


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    PDF 2SK1973F5 2SK2041 2SK2042 2SK2094F5 2SK2103 RU101 RU201 RU901 TA143E 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE

    2sd198

    Abstract: MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code 2SB1181
    Text: Tran.qi.stnrs< S u rfa c e M ounted T v d r r > ROHM CO LTD SbE D • 7flE5cn ti D O O b ^ a 03S ■ RHPI ■MPT • CPT F5 • PSD Application MPT — F 3 S - 17 Package CPT F5 Type | 2S81132 2S81182 Ic A Ic Max (A) - -3 2 -1 - -5 0 -3 hpE W T tTa=2ST)


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    PDF 2SB1132 2S81184 2S81182 2S81189 2SB1260 2SB1181 2S81275 2SC4132 2sd198 MARKING CODE f5 2SA1812 113 marking code transistor ROHM 2SA1690 2SD1788 2SD2211 2SK2041 F5 marking code

    2SB1516

    Abstract: 2SA1807 2SA1812 2sc4939 2SD2170 2SA1900 2SB1132 2SB1182 2SB1188 2SB1189
    Text: 7 0 2 0 ^ 0007372 noNin IRM I bTO MPT • CPT F5 • PSD Package Application MPT CPT F5 PSD VcEO V *VCES*VCEH Part No. lc (A) Pc (W) ic Max. (A) MPT {Ta=25‘C) hFE VCE (V) Ic (mA) Circuit 2SB1132 - - -3 2 -1 - 2* - 82— 390 -3 -1 0 0 E 3 ! f 2SA1900 -


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    PDF 2SB1132 2SA1900 2S61184 2SB1188 2SB1182 2SB1189 2SB1260 2S81181 2SB1275 2SB1516 2SA1807 2SA1812 2sc4939 2SD2170

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    d2396

    Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
    Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .


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    PDF 2SK2503 RK7002 TC363TS DTC314TS TC114G 100mA TA124G DTC144G d2396 TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460