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    2SD220 Search Results

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    2SD220 Price and Stock

    Rochester Electronics LLC 2SD2203R

    POWER BIPOLAR TRANSISTOR NPN
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    Rochester Electronics LLC 2SD2201R-DL-E

    BIP NPN 7A 80V
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    DigiKey 2SD2201R-DL-E Bulk 365
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    Toshiba America Electronic Components 2SD2206,T6F(J

    TRANS NPN 100V 2A TO92MOD
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    Toshiba America Electronic Components 2SD2206(TE6,F,M)

    TRANS NPN 100V 2A TO92MOD
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    Toshiba America Electronic Components 2SD2206(T6CANO,F,M

    TRANS NPN 100V 2A TO92MOD
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    2SD220 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD220 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SD220 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SD220 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD220 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SD220 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD220 Unknown Cross Reference Datasheet Scan PDF
    2SD220 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD220 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SD220 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD220 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SD220 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD220 Sanken Electric Transistor For General Purpose Scan PDF
    2SD2200 Kexin Switching Applications Original PDF
    2SD2200 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistors 80V-5A Sw Original PDF
    2SD2200 Sanyo Semiconductor High-current switch Original PDF
    2SD2200 TY Semiconductor Switching Applications - TO-263 Original PDF
    2SD2200 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2200 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2200 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2200 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SD220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1455

    Abstract: 2SD2203
    Text: Inchange Semiconductor Product Specification 2SB1455 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2203 ・Low collector saturation voltage: ・Large current capacity APPLICATIONS ・High current power switching applications


    Original     		PDF 2SB1455 O-220F 2SD2203 O-220F) 2SB1455 2SD2203

    D2204

    Abstract: 2SD2204
    Text: 2SD2204 東芝トランジスタ シリコンNPN三重拡散形 2SD2204 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 3 V, IC = 1.5 A)


    Original     		PDF 2SD2204 SC-67 2-10R1A 20070701-JA D2204 2SD2204

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD2201 TO-263 1 .2 7 -0+ 0.1.1 Features Surface mount type device making the following possible. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low collector-to-emitter saturation voltage. 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1


    Original     		PDF 2SD2201 O-263

    EN3152

    Abstract: 3152 2069B 2SB1452
    Text: Ordering number:EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment.


    Original     		PDF EN3152 2SB1452/2SD2201 2SB1452/2SD2201-applied 2069B 2SB1452/2SD2201] 2SB1452 EN3152 3152 2069B 2SB1452

    D2206 transistor

    Abstract: d2206 2sd2206
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 D2206 transistor d2206 2sd2206

    D2206 transistor

    Abstract: D2206 2SD2206
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 D2206 transistor D2206 2SD2206

    50V 100uf

    Abstract: No abstract text available
    Text: Ordering number:ENN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features Package Dimensions • Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.


    Original     		PDF ENN3249 2SB1454/2SD2202 2SB1454/2SD2202] 2SB1454 50V 100uf

    D2206

    Abstract: D2206 transistor D2206 a 2SD2206 TO92-MOD
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 D2206 D2206 transistor D2206 a 2SD2206 TO92-MOD

    D2206

    Abstract: D2206 transistor 2SD2206
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 D2206 D2206 transistor 2SD2206

    d2204

    Abstract: 2SD2204
    Text: 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)


    Original     		PDF 2SD2204 d2204 2SD2204

    2069B

    Abstract: 2SB1451 EN3151
    Text: Ordering number:EN3151 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1451/2SD2200 80V/5A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment.


    Original     		PDF EN3151 2SB1451/2SD2200 2SB1451/2SD2200-applied 2069B 2SB1451/2SD2200] 2SB1451 2069B 2SB1451 EN3151

    2SB1454

    Abstract: 2SD2202 ITR09739 ITR09740
    Text: Ordering number:ENN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features Package Dimensions • Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.


    Original     		PDF ENN3249 2SB1454/2SD2202 2SB1454/2SD2202] O-220ML 2SB1454 2SB1454 2SD2202 ITR09739 ITR09740

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Package Dimensions unit:mm 2069C [2SB1452/2SD2201] 10.2 4.5 1.4 3 1.2 2.55 : 2SB1452 2.55 0 to 0.3 0.4 1 : Base 2 : Collector 3 : Emitter


    Original     		PDF ENN3152 2SB1452/2SD2201 2SB1452/2SD2201-applied 2069C 2SB1452/2SD2201] 2SB1452

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN3250 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1455/2SD2203 80V/7A High-Current Switching Applications Features Package Dimensions • Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.


    Original     		PDF ENN3250 2SB1455/2SD2203 2SB1455/2SD2203] 2SB1455

    d2204

    Abstract: No abstract text available
    Text: 2SD2204 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2204 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)


    Original     		PDF 2SD2204 d2204

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE HIGH 2SD2204 POWER SWITCHING APPLICATIONS. HAMMER DRIVE, U nit in m m PULSE MOTOR DRIVE A P P L I C A T I O N S . 10±03 . H i g h DC C u r r e n t Gain: h F E = 2000 Min. (aC \'c e = 3V, . Low Saturation Voltage : V c E ( s a t ) = l •5 V ( H a x . ) (at Ic=1.5A)


    OCR Scan     		PDF 2SD2204

    D2200

    Abstract: No abstract text available
    Text: Ordering number : EN 3 1 5 1 □ 2SB1451/2SD2200 N o . 3151 SA \Y O PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F e a tu re s - Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1451/2SD2200-applied equipment


    OCR Scan     		PDF 2SB1451/2SD2200 2SB1451/2SD2200-applied 2SB1451 D2200 2SR1451

    2SD2206

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2206 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX. SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : h^E = 2000 (Min.) (V'ce = 2V, Iq = 1A)


    OCR Scan     		PDF 2SD2206 75MAX. 2SD2206

    sd220

    Abstract: 2069B 2SB1452 2SD2201 AN227 TSS-3B TOKYO
    Text: Ordering number-.EN 3152 2SB1452/2SD2201 No.3152 PNP/NPN Epitaxial Planar Silicon Transistors 80V/7A Switching Applications Features •Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1452/2SD2201-applied equipment


    OCR Scan     		PDF 2SB1452/2SD2201 2SB1452/2SD2201-applied 2SB1452 2SD2201 52/2S sd220 2069B 2SB1452 2SD2201 AN227 TSS-3B TOKYO

    2069B

    Abstract: 2SB1451
    Text: Ordering number: EN3151 2SB1451/2SD2200 No.3151 PN P/N PN E pitaxial P la n ar Silicon Transistors SANYO 80V/5A Switching Applications Features •Surface m ount type device m aking the following possible -Reduction in the num ber of m anufacturing processes for 2SB1451/2SD2200-applied equipm ent


    OCR Scan     		PDF EN3151 2SB1451/2SD2200 2SB1451/2SD2200-applied 2SB1451 2069B

    2sc2202

    Abstract: 2sd2202 2SB14 2SB1454 D2202
    Text: Ordering number: EN3249 sm Y o r No.3249 2SB1454/2SD2202 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F eatu res • Low collector-to-emitter saturation voltage • Large current capacity • Micaless package facilitating easy mounting


    OCR Scan     		PDF EN3249 2SB1454/2SD2202 2SB1454 2sc2202 2sd2202 2SB14 D2202

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2204 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • 10 ± 0.3 High DC Current Gain : hj^g —2000 Min. (VCE = 3V? IC = 1.5A) Low Saturation Voltage : V q e (sat) = l*5V (Max.) (Iç; = 1.5A)


    OCR Scan     		PDF 2SD2204

    Untitled

    Abstract: No abstract text available
    Text: 2SD2206 SILICON NPN EPITAXIAL TYPE DARLINGTON POWER MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm 5.1 M A X . High DC Current Gain : hFE= 200(Min. ) (Vce=2V, I c = 1A) . Low Saturation Voltage


    OCR Scan     		PDF 2SD2206 Ta-25

    2SD2204

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2204 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2204 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 . 03.2 ±0.2 -»I j.- • High DC Current Gain : hjn;E = 2000 Min.


    OCR Scan     		PDF 2SD2204 2SD2204