2SD2061 TRANSISTOR Search Results

D304

Abstract: 2SD2061 2SD1957 94L-1016-D304 D301
Contextual Info: Transistors 2SD1957 2SD2061 94L-919–D301 (94L-1016-D304) 315

2sd2061

Contextual Info: h 7 > y X $ /Transistors 2SD2061 2SD2061 NPN ' > U = I > h 7 > ' / 7 $ 1K;Jl}j£lt:ft*^lllIff l/L o w Freq. Power Amp. • • <8* vryjv';V^J'^ Triple Diffused Planar NPN Silicon Transistor \j">i /Dim ensions Unit: mm 1) V c e (sat) VcE(sat)=0.3V (Typ.)

2SD2061

Contextual Info: SavantIC Semiconductor Product Specification 2SD2061 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power

2SD2061

Contextual Info: Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power amplifier applications

2SD2061

Abstract: 2SB1369 transistor 2sd2061 IC vertical monitor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type 2SD2061

2sd2061

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD2061

Abstract: transistor 2sd2061 Transistor to 220 power transistor npn to-220 2sD2061 transistor
Contextual Info: 2SD2061 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features — — 2 3 Low saturation voltage Excellent DC current gain characteristice MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Paramenter Value Units VCBO Collector-Base Voltage

2SD2061

Abstract: 2sD2061 transistor transistor 2sd2061 60V transistor npn ic2a
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD2061

Abstract: 60V transistor npn ic2a transistor 2sd2061 2sD2061 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor D304

Abstract: D304 TRANSISTOR 2sd2061 D304 diode d304
Contextual Info: 2SD1957 2SD2061 Transistors 2SD1957 • F e a tu re s 1 H igh D C current gain. 1 6 0 — 500) 2 ) Low VcE(sat). (Typ. 0 .2 V at Ic /Ib = 3 / 0 .3 A ) 3 ) P c=»30W . (T c — 2 5 'C ) 4 ) W ide S O A (safe operating area). 5 ) Built-in dam p e r diode.

2SD2061

Abstract: 2SB1187 2SB1187 transistor transistor 2sd2061
Contextual Info: h 7 > '/ 7 ^ /Transistors 2SD2061 2 S D 2 0 6 1 h* îè§î :7<>U/”^ npn ^7>v7^ Freq. Power Am p. Triple Diffused Planar N P N S ilicon Transistor ^ JB ^ tiiiil/D im en sio n s Unit: mm 1) V c e (sat) VCE(sat)=0.3V (Typ.) Ic / I b = 2 A /0 .2 A 2) S M â t « » « h FE

Contextual Info: 2SD1957 2SD2061 Transistors Power Transistor 120V, 7A 2SD1957 1) ^Absolute maximum ratings (T a = 2 5 ‘C ) H ig h D C c u rre n t g a in . (1 6 0 ~ -5 0 0 ) 3) S ym bol L im its U n it C o lle c to r-b a s e v o lta q e V cbo 120 V C o lle c to r-e m ltte r v o lta g e

2SD2061

Abstract: b1370 2SB1370
Contextual Info: h -7 > y 7. £ /Transistors 2SB1370 2S B 1370 I e 2 * y 7 J l ? I/ - 1 M PNP y <J □ > h y > y X 2 Epitaxial Planar P N P S ilicon Transistor Freq. Power Am p. • 0 / D im e n s io n s U n it : mm 1) V c E is a t) * ''' '- '» VCE(sal) = — 0.55V(Typ.)

2SB1335A

Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Contextual Info: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)

2SC5248

Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
Contextual Info: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

2sd2061

Contextual Info: 40E ROHM CO L T ]> 7020^=1 » 0Q0b037 h "7 > v 7> $ /'Tran sistors IRHM 7 2SD 2061 7 ^ 3 3 -0 9 I S 1 “ • NP N h - 7 > v X ^ • ttft V^JViV^I'T Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • Wfé'ÎîÉISI/Dimensions Unit: mm 1) VcE (sat)

2SB1185

Abstract: 2sb1569a 2sd2037 transistor
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SB1335A

Abstract: 2sd2033a 2SD2061 2SB1496 2SD2037 2sd2396 2SA1757 2SB1370 2SB1616 2SD2033
Contextual Info: Transistors T0-220 •TO-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

sj 2038

Abstract: 2SB1335A 2SD2061 2SB1496 2SD2037 2sd2396 2SD2039 2SB1370 2SC4354 2sd2033a
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.