Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 Unit: mm 15.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage
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2SB1362
2SD2053
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2SD2053
Abstract: 2SB1362 ic 4001
Text: Power Transistors 2SD2053 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1362 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 Symbol Ratings Unit 150 V 150 V Collector to base voltage VCBO VCEO Emitter to base voltage
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2SD2053
2SB1362
2SD2053
2SB1362
ic 4001
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2SB1362
Abstract: 2SD2053
Text: Inchange Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SB1362 APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION
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2SD2053
2SB1362
2SB1362
2SD2053
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2SB1362
Abstract: 2SD2053
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1362 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD2053 APPLICATIONS ·Designed for high power amplifications.
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2SB1362
-150V
2SD2053
-150V;
-20mA;
2SB1362
2SD2053
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2SB1362
Abstract: 2SD2053
Text: SavantIC Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base
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2SB1362
2SD2053
-150V;
-20mA
2SB1362
2SD2053
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2SD2053
Abstract: 2SB1362
Text: SavantIC Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SB1362 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base
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2SD2053
2SB1362
2SD2053
2SB1362
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2sd2053
Abstract: 2SB1362
Text: Inchange Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD2053 APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION
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2SB1362
2SD2053
-20mA
2sd2053
2SB1362
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2SB1362
Abstract: 2SD2053
Text: Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 Ratings Unit –150 V –150 V VCBO VCEO Emitter to base voltage VEBO Peak collector current
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2SB1362
2SD2053
2SB1362
2SD2053
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2SD2053
Abstract: 2SB1362
Text: Power Transistors 2SD2053 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1362 Unit: mm 15.0±0.5 Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage
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2SD2053
2SB1362
2SD2053
2SB1362
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2SB1362
Abstract: 2SD2053
Text: Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 Unit: mm 15.0±0.5 Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage
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2SB1362
2SD2053
2SB1362
2SD2053
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2053 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1362 Unit: mm 15.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage
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2SD2053
2SB1362
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
PAL005A
UPC2581V
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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Untitled
Abstract: No abstract text available
Text: Power T ransistors 2SD2053 2SD2053 Silicon NPN Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SB1362 • Features • High breakdow n voltage: V ceo= 1 5 0 V • Good linearity of DC c u rre n t gain I i f e
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2SD2053
2SB1362
SD2053
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2SD2053
Abstract: 2SB1362
Text: Power Transistors 2SD2053 2SD2053 Silicon N PN Triple-Diffused P lanar Type P ackage Dim ensions High Pow er Amplifier C om plem entary Pair with 2 S B 1 3 6 2 • Features • High breakdow n voltage: V ceo = 150V • Good linearity of DC cu rren t gain I i f e
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2SD2053
2SB1362
bi32flSE
2SD2053
2SB1362
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2SB1531
Abstract: 2SD2340 equivalent 2SB1255 2sb1492 2SD2328 2SA1185 2SB1421 2SC4535 2SD1457 2SD1457A
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use lc VcE(sat) (A) (V) Darlington High-hfE Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100 5 <2 3 300 140
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SB1531
2SD2340 equivalent
2SB1255
2sb1492
2SD2328
2SA1185
2SB1421
2SC4535
2SD1457
2SD1457A
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Untitled
Abstract: No abstract text available
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100
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2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SA1185
2SB1054/2SD1485
2SB1421
2SD1457
2SD1457A
2SB1252/2SD1892
2SB1502/2SD2275
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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2SD2340 equivalent
Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2254
2SB1493
2SD1485
2SB1531
2SD2328
2SA1185
2SD2052 equivalent
2SD1641
2SD1707
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2SD2340 equivalent
Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4
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2SA1185
2SB1054/2SD1485
2SB1421
2SB1154/2SD1705
2SB1155/2SD1706
2SB1156/2SD1707
2SD1457
2SD1457A
2SC4535
2SD1641
2SD2340 equivalent
D2250
2SD1485
d2554
2SD2340
audio Darlington 200 W
2SD2052 equivalent
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2SC4609
2SC4808
2SA1806
2SC4627
2SA1790
2SC4626
2SC4655
2SD2345
2SC46
12SA1
D1276A
B1419
d638 transistor
b1361
ic 1271a
D1273
D1985A
B947A
B1178
1985A
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