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    2SD1862 Search Results

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    2SD1862 Price and Stock

    ROHM Semiconductor 2SD1862TV2P

    TRANS GP BJT NPN 32V 2A 3-PIN AT
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    ROHM Semiconductor 2SD1862TV2Q

    TRANS NPN 32V 2A ATV
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    DigiKey 2SD1862TV2Q Ammo Pack 2,500
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    ROHM Semiconductor 2SD1862TV2R

    TRANS NPN 32V 2A ATV
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    Bristol Electronics 2SD1862TV2R 2,500
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    Quest Components 2SD1862TV2R 2,000
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    Others 2SD1862

    TRANSISTOR,BJT,NPN,32V V(BR)CEO,2A I(C),SIP
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    Quest Components 2SD1862 160
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    2SD1862 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD1862 ROHM Medium Power Transistor (32V, 2A) Original PDF
    2SD1862 ROHM Medium Power Transistor (32V, 2A) Original PDF
    2SD1862 ROHM Medium power transistor Original PDF
    2SD1862 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1862 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD1862 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1862 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD1862 ROHM ATR, ATV Transistors Scan PDF
    2SD1862 ROHM ATR / ATV Transistors Scan PDF
    2SD1862TV2Q ROHM Driver Transistor; Package: ATV; Constitution materials list: Packing style: Ammo Box; Package quantity: 2500; Original PDF
    2SD1862TV2Q ROHM Medium Power Transistor (32 V, 2 A) Original PDF
    2SD1862TV2R ROHM TRANS DRIVER NPN 32V 2A ATV TB Original PDF
    2SD1862TV2R ROHM Medium Power Transistor (32 V, 2 A) Original PDF

    2SD1862 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD1862

    Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3


    Original     		PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SD1862 2SB1240 2SB1182 T100

    2SD1758

    Abstract: 2SB1240 2SB1182 2SB1188 2SD1766 2SD1862 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3


    Original     		PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 65Max. 2SB1240 2SB1182 2SB1188 2SD1862 T100

    1AM5

    Abstract: 2SB1240 2SB1182 2SD1758 2SD1862
    Text: Medium power transistor 32V, 2A 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1758 2SD1862 2SD1758 2SB1182 2SB1240 65Max. SC-63 R1010A 1AM5 2SB1240 2SD1862

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 32V, 2A 2SD1758 / 2SD1862 Dimensions (Units : mm) 2SD1862 6.5±0.2 5.1+0.2 −0.1 2.5±0.2 6.8±0.2 4.4±0.2 9.5±0.5 1.5 0.9 0.5±0.1 0.65±0.1 0.75 2.3+0.2 −0.1 2.5 Structure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1758 2SD1862 2SB1182 2SB1240 2SD1758 65Max. SC-63 R1010A

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


    Original     		PDF 2SB1182 2SB1240 2SD1758 2SD1862. 2SB1182 65Max. SC-63 R1010A

    2SB1182

    Abstract: 2SB1240 2SD1758 2SD1862
    Text: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


    Original     		PDF 2SB1182 2SB1240 2SD1758 2SD1862. 2SB1182 65Max. SC-63 R1010A 2SB1240 2SD1862

    2SB1182

    Abstract: 2SB1240 2SB1188 2SD1758 2SD1766 2SD1862 T100 302 ROHM
    Text: Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 Dimensions (Unit : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.9 2.3±0.2 3.0±0.2 Abbreviated symbol : DB∗ ROHM : MPT3 EIAJ : SC-62 0.65±0.1 0.75 2.3+0.2 −0.1


    Original     		PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SB1182 2SB1240 R0039A 2SB1240 2SD1862 T100 302 ROHM

    Untitled

    Abstract: No abstract text available
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium power transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SD1758 1.0±0.2 (2) (3) 0.1 0.4 + −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.4±0.1 1.5±0.1 Abbreviated symbol : DB∗ ROHM : MPT3


    Original     		PDF 2SD1766 2SD1758 2SD1862 2SB1188 2SB1182 2SB1240 2SD1766

    736 33

    Abstract: 8069 2SD1862
    Text: SPICE PARAMETER 2SD1862 by ROHM TR Div. * 2SD1862 NPN BJT model * Date: 2006/12/04 .MODEL 2SD1862 NPN + IS=600.00E-15 + BF=185.52 + VAF=33.033 + IKF=10 + ISE=600.00E-15 + NE=1.8069 + BR=73.093 + VAR=100 + IKR=75.250E-3 + ISC=3.4894E-12 + NC=1.2296 + NK=.43296


    Original     		PDF 2SD1862 Q2SD1862 00E-15 250E-3 4894E-12 000E-3 891E-3 88E-12 736 33 8069 2SD1862

    Untitled

    Abstract: No abstract text available
    Text: 2SD1862 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.82 h(FE) Max. Current gain.390


    Original     		PDF 2SD1862 Freq100M

    transistor

    Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
    Text: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.


    Original     		PDF 2SB1188 2SB1182 2SB1240 2SB822 2SB1277 2SB911M 2SD1766 2SD1758 2SD1862 2SD1189F transistor SD1227 transistor 2SB1240 silicon pnp transistor transistor 2A

    2SD1758

    Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M


    Original     		PDF 2SD1766 2SD1758 2SD1862 2SD1055 2SD1919 2SD1227M 2SB1188 2SB1182 2SB1240 2SB891F 96-217-B24 transistor 257 2SD1227M 2SB911 transistor 2SD1862

    2SB1182

    Abstract: 2SB1240 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3


    Original     		PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SB1182 2SB1240 2SD1862 T100

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SD1766

    Abstract: 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) ►External dim ensions (Units: mm ) L O W VcE(sat). VcEisat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) •±8;f 4.5: 6 ±0.1


    OCR Scan     		PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M SC-62 2SD1766 2SD1758 2SD1766) 2SD1758) 2SD1862, 2SD1227M) 2SD1189F) 2SD1766 2SD1919 2SD1862 05SL 2SD1227M 96-217-B24 2SD1055

    Untitled

    Abstract: No abstract text available
    Text: h "7 > v 7, $ /T ra n sisto rs 2SD1227M/2SD1862 2SD1227M O C n iO fiO 4 11 : ^ ± i [t1if f l/ M e d iu m P ow er Amp. Eptaxial Planar NPN S ilico n Transistors Iw O fc • H M r H iH /D im e n s io n s U n it: mm sir yj v‘: v vu -r • *8:1 1) Pc= 1 W t * # l ' „


    OCR Scan     		PDF 2SD1227M/2SD1862 2SD1227M 2SB911 /2SB1240 160mV 2SB911M, 2SB1240. 2SD1227M 2SD1862

    2SB1240

    Abstract: No abstract text available
    Text: 2SB1240 Transistor, PNP Features Dimensions Units : mm • available in ÀTV TV2 package • high power: Pq = I V J • low collector saturation voltage, typically VCE(sat) - 0.2 V at Ic/Ib = lA/—0.1 A complementary pair with 2SD1862 • 2SB1240 (ATV TV2)


    OCR Scan     		PDF 2SB1240 2SD1862 2SB1240

    2SD1189F

    Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1


    OCR Scan     		PDF 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M 2SB1188/2SB1182/2SB1240/2SB 2SB822/ 2SB1277/2SB911M 2SD1758 SC-63 2SD1189F O-126FP 2SD1919 2SB822 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000

    2SD1878

    Abstract: 2SB1240 2SD1853 2SD1855A 2SD1877 2SD188 2SD1851 2SD1852 2SD1854 2SD1855
    Text: - 270 - <Ta=25"C, *EPÌÌTc=25'C fi <3 & Vq r o V) 2SD1851 2SD1852 2SD1853 2SD1854 2SD1855 2SD1855A 2SD1856 2SD1857 2SD1858 2SD1859 2SD1860 2SD1861 2SD1862 2SD1863 2 SDÌ8 64 2SD1865 2SD1866 2SD1867 2SD1868 2SD1869 2SD1870 2SD1876 2SD1877 2SD1878 2SD1879


    OCR Scan     		PDF 2SD1851 2SD1852 2SD1853 2SD1854 2SD1855 2SD1855A 2SD1856 2SD1857 12ECB, 2SD1867 2SD1878 2SB1240 2SD1853 2SD1877 2SD188 2SD1851 2SD1854

    2SD1862

    Abstract: No abstract text available
    Text: 2SD1862 Transistor, NPN Features Dimensions Units : mm • a v a ila b le in A T V T V 2 p a c k a g e • lo w c o lle c to r s a tu ra tio n v o lta g e , ty p ic a lly V CE(sal) = 0.16 V a t Ic / I b ~ I A /0 .1 A • 2SD1862 (ATV TV2) I (i B to 2 b c o m p le m e n ta ry p a ir w ith 2 S B 1 2 4 0


    OCR Scan     		PDF 2SD1862 2SD1862

    2iy transistor

    Abstract: 2SD1227M
    Text: h -? > v $ /Transistors 2SD1227M/2SD1862 2SD1227M 2SD1862 Xk°2*'>7^7°U-tfêNPN y bÿ>v*$ Epitaxil Planar NPN Silicon Transistor /Medium Power Amp. • £1-Jfi'+;£Eil/Dimensions Unit : mm 1) P c = l W i: ± # i'„ 2SD1227M 2SD1862 r 2.5 ± 0.2 6.8 i 0.2


    OCR Scan     		PDF 2SD1227M/2SD1862 2SD1227M 2SD1862 2SD1227M 2SB911M SC-71 2iy transistor

    2SB1232

    Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
    Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004


    OCR Scan     		PDF 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226

    2SB909M

    Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
    Text: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p


    OCR Scan     		PDF 2SA937AMLN 2SC2021MLN 2SA937AM 2SA1547A 2SC2021M 2SC4010 2SC4776M 2SC4778 2SA874M 2SA1548 2SB909M 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2Sc4776 2SB1130

    2SB911M

    Abstract: 2SB1240
    Text: h 7 > y Z 5 t / T ransistors 2 S B 9 1 1 M A Q n j O A fl 2SB911M/2SB1240 x , =:e5l * > ' ' 7J l ' 7 ° l ' - J - B P N P y ' j 3 > h 7 > y 7 ^ Power Amp. Epitaxial Planar PNP Silicon Transistors • • ÿHfé-sJ’JÉBI/Dimensions Unit : mm 1) Pc = 1 W


    OCR Scan     		PDF 2SB911M/2SB1240 2SD1227M/2SD1862£ 2SB911M 2SB1240 2SB1240