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    2SD1763 TRANSISTOR Search Results

    2SD1763 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SD1763 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1186

    Abstract: 2sb1186 equivalent 2SB1236 2SC4132 2SD1763 2SD1857 2SD2343
    Text: Transistors 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 94L-268-A56 (96-175-C56) 276


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    PDF 2SB1236 2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 94L-268-A56) 96-175-C56) 2SB1186 2sb1186 equivalent 2SD1763

    2SD1763 transistor

    Abstract: 2SB1186 2SD1763 2sb1186 equivalent 15 A PNP POWER TRANSISTOR
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1186 DESCRIPTION •High Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Good Linearity of hFE ·Complement to Type 2SD1763 APPLICATIONS ·Power amplifier applications.


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    PDF 2SB1186 -120V 2SD1763 -100V; 30MHz 2SD1763 transistor 2SB1186 2SD1763 2sb1186 equivalent 15 A PNP POWER TRANSISTOR

    2SB1186

    Abstract: 2sb1186 equivalent 2SD1763
    Text: JMnic Product Specification 2SB1186 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1763 ・High breakdown voltage APPLICATIONS ・For use in low frequency power amplifer applications


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    PDF 2SB1186 O-220Fa 2SD1763 -100V; 2SB1186 2sb1186 equivalent 2SD1763

    2SB1186

    Abstract: 2SD1763 2sb1186 equivalent
    Text: SavantIC Semiconductor Product Specification 2SB1186 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1763 ·High breakdown voltage APPLICATIONS ·For use in low frequency power amplifer applications


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    PDF 2SB1186 O-220Fa 2SD1763 -100V; 2SB1186 2SD1763 2sb1186 equivalent

    2SB1186

    Abstract: 2sb1186 equivalent 2SD1763
    Text: Inchange Semiconductor Product Specification 2SB1186 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation votlage ・Complement to type 2SD1763 ・High breakdown voltage APPLICATIONS ・For use in low frequency power


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    PDF 2SB1186 O-220Fa 2SD1763 -100V; 2SB1186 2sb1186 equivalent 2SD1763

    2SD1763

    Abstract: 2sd1763 equivalent 2SB1186 2sb1186 equivalent
    Text: SavantIC Semiconductor Product Specification 2SD1763 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High breakdown voltage VCEO ·Complement to type 2SB1186 ·High transition frequency APPLICATIONS ·For low frequency power amplifier applications


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    PDF 2SD1763 O-220Fa 2SB1186 O-220Fa) 2SD1763 2sd1763 equivalent 2SB1186 2sb1186 equivalent

    D352 transistor

    Abstract: transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 9697a 96-596-A74 transistor D212
    Text: Transistors 2SA1759 2SC4505 / 2SC4620 96-97-A324 (96-178-C300) 305 Transistors 2SA1797 / 2SB1443 2SC4672 (96-100-B208) (96-181-D208) 291 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1900 2SC5053 (96-115-B352) (96-196-D352) 297


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    PDF 2SA1759 2SC4505 2SC4620 96-97-A324) 96-178-C300) 2SA1797 2SB1443 2SC4672 96-100-B208) 96-181-D208) D352 transistor transistor D406 transistor d228 D348 transistor TRANSISTOR D405 D352* transistor transistor b228 9697a 96-596-A74 transistor D212

    2sd1763

    Abstract: No abstract text available
    Text: K "7 > V 7. $ /Transistors 2SD1763 2SD1763 X t f ^ ^ r N P N v 'J =1 > K 7 Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • ^ M 5 \t if t @ /Dimensions U n it: mm (BVceo= 120 V ) o 2) A S O t f K l ' o 3) 2 S B 1 1 8 6 t= i> 7 " lJ T i * 5 o


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    PDF 2SD1763 2SB1186. 2sd1763

    2SD1763

    Abstract: 2Sb1186 2SD1763 transistor
    Text: 7-, £ / T ransistors h -7 > v 2SD1763 m X t° $ * V 7 U NPN y >J□ > N7 > y 7 $ Epitaxial Planar NPN Silicon Transistor flU§>JfcS^^1iffl/LowFreq. Power Amp. 2SD1763 • • w* 1 rfjiE l/D im e n s io n s U n it: mm) ¡IitH T St>-S o B V ce o= 120 V <M i tO. I


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    PDF 2SD1763 2SB1186 O-220FP SC-67 Para60 2SD1763 2SD1763 transistor

    2sd1763

    Abstract: No abstract text available
    Text: 2SB1236/2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors Power Transistor —120 V, —1.5A 2SB1236 / 2SB 1186 •F e a tu re s 1 ) High breakdown voltage. (BV ceo= —120V) 2 ) Low collector output capacitance. (Typ. 30pFatVcB—•—10V) 3 ) High transition frequency. (fr—SOMHz)


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    PDF 2SB1236/2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1236 30pFatVcBâ 2SD1857/2SD1763. 2SB1236 2SB1186 2sd1763

    D1763

    Abstract: MARKING HRA SC4132 2SD1763 transistor D1857 B1186
    Text: 2SB1236 / 2SB1186 2SC4132 / 2SD185712SD2343 / 2SD1763 Transistors Power Transistor — 120V, — 1.5A 2S B 1236 / 2S B 1186 •F e atu res 1 ) High breakdown voltage. iB V cso — — 120V) 2 ) Low collector output capacitance. (Typ. SO pFatV cB5 — 10V)


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    PDF 2SB1236 2SB1186 2SC4132 2SD185712SD2343 2SD1763 50MHz) 2SD1857/2SD1763. 2SB11B8 O-220FPwn D1763 MARKING HRA SC4132 2SD1763 transistor D1857 B1186

    2SD1763 transistor

    Abstract: 2SD1763 2SD2343 2SB1166 2SB1186 2SB1236 2SC4132 2SD1857 transistor 120v 40X40X0
    Text: 2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 Transistors I 120V, —1.5A Power Transistor 2SB1236 / 2SB1186 • A b s o lu t e m axim um ratings (T a = 2 5 'C ) •F e a tu re s 1) H ig h b re a k d o w n v o lta g e . (B V ceo = — 1 2 0 V )


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    PDF 2SB1236 2SB1186 2SC4132 2SD1857 2SD2343 2SD1763 2SB1186 50MHz) 2SD1857/2SD1763. 2SD1763 transistor 2SD1763 2SB1166 transistor 120v 40X40X0

    Untitled

    Abstract: No abstract text available
    Text: ROHM m 40E D CO LTD 7826=^=1 DODS^bM fl • R H M N -7 > V X $ / I ransistors 2SD1763 ■— 2 S D 1 7 6 3 T -3 2 -o 9 '> > ;= ]> N 7 > y ^ ^ Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • [50/Dimensions Unit: mm 1 ) W E T 'f e 5 (B V Ce o = 1 2 0 V ) o


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    PDF 2SD1763 50/Dimensions 2SB1186i 2SB1186.

    2sb1186

    Abstract: 2SD1763
    Text: 2SB1186 h 7 > y ^ i > /T ra n s is to rs 2SB1186 iâ J iîÆ filfr ^ 'Îiffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • ^ J fiT H iE l/D im e n s io n s U nit : mm 1) h (B V c e o = - 1 2 0 V ) o ~7 Is 2) ASOA'Ia I ' o V 7s 3) 2SD1763£=l>yiJ T ' & Z o


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    PDF 2SB1186 2SD1763£ 2SD1763. 2sb1186 2SD1763

    2SC5248

    Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
    Text: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F


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    PDF T0-126FP O-126FP 2SB891F 2SB889F 2SB1436 2SD1189F 2SD1200F 2SD1381F 2SD2343 2SD2166 2SC5248 2SD2025 2SB1185 2SA1964 2sb1655

    2SB1186

    Abstract: No abstract text available
    Text: 2SB1186 / T ransistors x tf $ * > T i ^ - f PNP V V =3 > h 7 > V * 2 Epitaxial Planar PNP Silicon Transistor ig;JÍ}Jfc1t2jíSlfÍffl/Low Freq. Power Amp. 2SB 1186 • £t-Jfí\t‘jílII,/D ¡m ens¡on s U n it: mm & & 1) BV c e O = _ 160V 4.5 1 r r 2) S O A f r 'K l'o


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    PDF 2SB1186 2SD1763.

    Untitled

    Abstract: No abstract text available
    Text: ROHM CO L T D i> 40E ' 7626^1 OQQSS7S h 7 > ÿ ^ i f / T ransistors Ô ^IRHM 2SB1186 T -2 3 -t - 2 S B - f U — r m P H P 1 1 ; h 7 > y X <? Î î ! E J l } $ l Ì : f t i Ì lÌÌffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor


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    PDF 2SB1186 2SD1763.

    2SB1185

    Abstract: 2sb1569a 2sd2037 transistor
    Text: Transistors TO-220 T0-220FP T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


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    PDF O-220 T0-220FP T0-220FN O-220FP O-220 O-220FN 2SA1634 2SB1369 2SB1185 2sb1569a 2sd2037 transistor

    SB1335A

    Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
    Text: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


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    PDF O-220 T0-220FP O-220FN O-220FP T0-220 O-220FN SB1335A 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041

    Untitled

    Abstract: No abstract text available
    Text: Transistors T0-220 T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


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    PDF T0-220 T0-220FP O-220FN O-220FP O-220 O-220FN 2SA1634 2SB1369

    2SB1335A

    Abstract: 2sd2033a 2SD2061 2SB1496 2SD2037 2sd2396 2SA1757 2SB1370 2SB1616 2SD2033
    Text: Transistors T0-220 •TO-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


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    PDF T0-220 O-220FP O-220FN O-220FP O-220 O-220FN T0-220FN 2SB1335A 2sd2033a 2SD2061 2SB1496 2SD2037 2sd2396 2SA1757 2SB1370 2SB1616 2SD2033

    sj 2038

    Abstract: 2SB1335A 2SD2061 2SB1496 2SD2037 2sd2396 2SD2039 2SB1370 2SC4354 2sd2033a
    Text: Transistors TO-220 T0-220FP T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


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    PDF O-220 T0-220FP T0-220FN O-220FP O-220 O-220FN T0-220FP sj 2038 2SB1335A 2SD2061 2SB1496 2SD2037 2sd2396 2SD2039 2SB1370 2SC4354 2sd2033a

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


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    PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    2SC2030

    Abstract: OTB-122 28C32 DTD143EF DTC143EVA BUK 155 DTD114EF 2SC337 2SD18 TV6,5
    Text: The Class and Basic Ordering Units for Standard and Semi-standard Products To make it easier for the customer to select the type of product best suited to specific applications, we offer transistors in three types : 1 standard, (2 ) semi­ Package FTR 2SA785


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    PDF 1k--10k 1k--20k DT3C144W DT5A113Z DT5A114E DT5A124E DT5A143E DT5A143T DT5A143X DT5A144E 2SC2030 OTB-122 28C32 DTD143EF DTC143EVA BUK 155 DTD114EF 2SC337 2SD18 TV6,5