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    2SD VEBO 15V Search Results

    2SD VEBO 15V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL32437EIUZ Renesas Electronics Corporation ±40V Fault Protected, 3.3V to 5V, ±15V Common Mode Range, RS-485/RS-422 Transceivers With Cable Invert and ±15kV ESD Visit Renesas Electronics Corporation
    ISL32432EIBZ-T Renesas Electronics Corporation ±40V Fault Protected, 3.3V to 5V, ±15V Common Mode Range, RS-485/RS-422 Transceivers With Cable Invert and ±15kV ESD Visit Renesas Electronics Corporation
    ISL32430EIUZ Renesas Electronics Corporation ±40V Fault Protected, 3.3V to 5V, ±15V Common Mode Range, RS-485/RS-422 Transceivers With Cable Invert and ±15kV ESD Visit Renesas Electronics Corporation
    ISL32433EIBZ-T Renesas Electronics Corporation ±40V Fault Protected, 3.3V to 5V, ±15V Common Mode Range, RS-485/RS-422 Transceivers With Cable Invert and ±15kV ESD Visit Renesas Electronics Corporation
    ISL32432EIUZ-T Renesas Electronics Corporation ±40V Fault Protected, 3.3V to 5V, ±15V Common Mode Range, RS-485/RS-422 Transceivers With Cable Invert and ±15kV ESD Visit Renesas Electronics Corporation

    2SD VEBO 15V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN694H 2SB815/2SD1048 Bipolar Transistor http://onsemi.com – 15V, (–)0.7A, Low VCE(sat), (PNP)NPN Single CP Features • • Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage


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    EN694H 2SB815/2SD1048 2SB815 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN694G 2SB815/2SD1048 Bipolar Transistor http://onsemi.com – 15V, (–)0.7A, Low VCE(sat), (PNP)NPN Single CP Features • • Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage


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    EN694G 2SB815/2SD1048 2SB815 PDF

    DC 4017 IC

    Abstract: of ic 4017 1502SB IC 4017 B
    Text: Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features • • Package Dimensions Ultrasmall package allows miniaturization in end products. Large current capacity IC=0.7A and low-saturation


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    ENN694F 2SB815 2SD1048 2018B 2SD1048] DC 4017 IC of ic 4017 1502SB IC 4017 B PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features • • Package Dimensions Ultrasmall package allows miniaturization in end products. Large current capacity IC=0.7A and low-saturation


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    ENN694F 2SB815 2SD1048 2018B 2SD1048] 2SB815 PDF

    ic 4017

    Abstract: of ic 4017 IC 4017 B 2SB815 2SD1048 ITR08396 ITR08397 ITR08398 ITR08399 ITR08400
    Text: Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features • • Package Dimensions Ultrasmall package allows miniaturization in end products. Large current capacity IC=0.7A and low-saturation


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    ENN694F 2SB815 2SD1048 2018B 2SD1048] 2SB815 ic 4017 of ic 4017 IC 4017 B 2SD1048 ITR08396 ITR08397 ITR08398 ITR08399 ITR08400 PDF

    DC 4017 IC

    Abstract: free IC 4017 1502sb sot-23 15V vebo pnp 2sb815
    Text: 2SB815 / 2SD1048 Ordering number : EN694G SANYO Semiconductors DATA SHEET 2SB815/2SD1048 PNP / NPN Epitaxial Planar Silicon Transistor General-Purpose AF Amplifier Applications Features • • Ultrasmall package allows miniaturization in end products Large current capacity IC=0.7A and low-saturation voltage


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    EN694G 2SB815 2SD1048 2SB815/2SD1048 2SB815 DC 4017 IC free IC 4017 1502sb sot-23 15V vebo pnp PDF

    2SB815

    Abstract: 2SD200 2SD100 2SD1048 D109 ITR08396 ITR08397 ITR08398 ITR08399 2SB815-6
    Text: 注文コード No. N 6 9 4 F 2SB815 / 2SD1048 No. N694F 41301 半導体ニューズ No.N694E とさしかえてください。 2SB815 / 2SD1048 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 低周波一般増幅用 ・超小型パッケージのためセットの小型化 , 薄型化が可能である。


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    2SB815 2SD1048 N694F N694E 500mA 100mA, ITR08400 ITR08401 2SD200 2SD100 2SD1048 D109 ITR08396 ITR08397 ITR08398 ITR08399 2SB815-6 PDF

    2SC536E

    Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


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    ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385 PDF

    2SD808

    Abstract: 2sb transistor 2sb808 2SC536e 2SA608e
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


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    ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SD808 2sb transistor 2sb808 2SC536e 2SA608e PDF

    2SC536E

    Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
    Text: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter


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    ENN676D 2SB808/2SD1012 2SB808/2SD1012] 2SB808 2SC536E 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385 PDF

    nec tokin oe 128

    Abstract: NEC emma2 NEC 720114 PD720101 N13T2 JAPANESE 2SC TRANSISTOR 2010 uPC 2002 453 8pin opto p281 opto 5.5V 0.47f GC
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    X18437JJ3V0IF00 X18437JJ2V0IF 10BASE2/5/-T 10Mbps 200m5 100BASE-T 100Mbps 100BASE-TX100BASE-T4100BASE-FX 1000BASE-X 1000BASE-LX1000BASE-SX1000BASE-CX nec tokin oe 128 NEC emma2 NEC 720114 PD720101 N13T2 JAPANESE 2SC TRANSISTOR 2010 uPC 2002 453 8pin opto p281 opto 5.5V 0.47f GC PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan
    2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    2SB608

    Abstract: 2SC536 DS442X 2SD1012F 2SA608 2SC536E transistor 2sa608 sanyo 2SC536e 2SD1012 2SA60
    Text: j Ordering number: EN 676D 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors N0.676D Low-Voltage Large-Current _ Amp Applications I2SB808 Absolute Maximum Ratings at Ta=25 C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


    OCR Scan
    2SB808/2SD1012 I2SB808 2SB608 2SC536 DS442X 2SD1012F 2SA608 2SC536E transistor 2sa608 sanyo 2SC536e 2SD1012 2SA60 PDF

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan
    S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


    OCR Scan
    thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan
    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF