2SA490
Abstract: 2SC790 2SC790 O
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA490 DESCRIPTION •High Collector Current: IC= -3A ·Collector-Emitter Breakdown Voltage : V BR CEO= -40V(Min) ·Complement to Type 2SC790 APPLICATIONS ·10 Watts output applications
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2SA490
2SC790
2SA490
2SC790
2SC790 O
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2SA490
Abstract: 2sc790
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA490 DESCRIPTION •High Collector Current: IC= -3A ·Collector-Emitter Breakdown Voltage : V BR CEO= -40V(Min) ·Complement to Type 2SC790 APPLICATIONS ·10 Watts output applications
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2SA490
2SC790
-10mA
2SA490
2sc790
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2SC790 O
Abstract: No abstract text available
Text: TOSHIBA {]>ISCRETE/0PT07 9097250 TOSHIBA Sb T 0 ci75S0 00D7217 56C DISCRETE/OPTO 07217 SILICON PNP TRIPLE DIFFUSED TYPE_ _ Unit in mm 103 MAX 03ß±<XZ POWER AMPLIFIER APPLICATIONS. FEATURES: Complementary to 2SC790 . 10 Watts Output Applications
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ISCRETE/0PT07
i75S0
00D7217
2SC790
T0-220AB
2SC790 O
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2sc790
Abstract: 2SA490
Text: JMnic Product Specification 2SA490 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC790 APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base
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2SA490
O-220
2SC790
O-220)
2sc790
2SA490
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2SA490
Abstract: 2SA490 POWER 2sc790
Text: SavantIC Semiconductor Product Specification 2SA490 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC790 APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base
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2SA490
O-220
2SC790
O-220)
2SA490
2SA490 POWER
2sc790
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25X2
Abstract: 2SA490 2SC790 2SC790 O
Text: AOK Product Specification AOK Semiconductor 2SA490 Silicon PNP Power Transistors DESCRIPTION • With T 0 2 2 0 package • Complement to type 2SC790 APPLICATIONS • For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SA490
O-220
2SC790
300t0
25X2
2SC790 O
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2S0880
Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
Text: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U
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2SC790
2SD795
2SD1135
2SD389
2SD2023
2SD313
2SC79Ã
2SD390
2S0880
2SD427
SD 338
2Sd428
2sd880
2SD2023
2SC2320
2SC1815
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2SC789
Abstract: 2sc1060 2SC1061 250314 2SD331 2SA473 2SA489 2SA490 2SA670 2SA671
Text: TYPE NO. P O L A R IT Y Pow er Transistors CASE M A X IM U M r a t in g s 'c pd IW A) V CEO (V) V C E (S A T ) h fe min max 'c (A) VCE (V) max 'c (V) (A) fT min COM PLE (M Hz) TYPE 2SC789 2SC790 2SC1060 2SC1061 2 S C 1 17 3 2SC1626 N N N N N N T O -22 0
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2SC789
O-220
2SA489
2SC790
2SA490
2SC1060
2SA670
2SC1061
250314
2SD331
2SA473
2SA489
2SA490
2SA670
2SA671
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2sc790
Abstract: transistor 2SC 790 c790 2SA490 AC75 jd2030 SS4490 2SC790 O
Text: 2 s c 790 o ^ SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR n tim m m o Power Amplifier Applications 3 S A 4 9 0 £ 3 V 7 *iJ H i - F i OTL / y jt ' J T t i i ^ l O W ^ ^ ^ 7 y 7 K M '& 'Z 't o Complementary to 2SA490 10 Watts Output is Available. MAXIMUM RATINGS Ta=g5"C
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SS4490
2SA490
220AB
2sc790
2sc790
transistor 2SC 790
c790
AC75
jd2030
2SC790 O
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2SB512P
Abstract: tip318 TIP31N TIP308 MH0870 TIP298 2sb435 2sc1060 MH8106 MH8500
Text: TYPE NO. P O L A R ITY Power Transistors M A X IM U M R A TIN G S Pd 'c W A) V C E(SA T) h fe V CEO (V) 'c min max (A) V CE (V) 1 0.5 0.2 0.2 1 1 max 'c fT min (V) (A) 2 2 2 2 2 2 0.8 0.8 0.5 0.5 1.2 0.8 2 2 0.5 0.5 3 2 5 30 50 50 5 5 (MHz) COMPLE M ENTARY
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MH0870
O-220
MH8700
MH8100
O-22C
MH0810
MH8106
MH0816
H8108
2SB512P
tip318
TIP31N
TIP308
TIP298
2sb435
2sc1060
MH8500
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2SA481
Abstract: 2SC484 transistors EP 487 2SC1000 2sc400 2SC497 2SC372 2SC486 2SC501 transistor 2SC372
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SC503
2SC504
2SC495
2SC509
2SC510
2SA481
2SC484
transistors EP 487
2SC1000
2sc400
2SC497
2SC372
2SC486
2SC501
transistor 2SC372
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b1375
Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39
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2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N4340
2N4340S
b1375
2sk270a
2SK150A
MG15G1AL2
2SA1051b
MG50G2CL1
mg100g1al2
2SA1015
A1265N
MG100G1AL1
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2SK 150A
Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015
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2N3713
2N3714
2N3715
2N3716
2N3789
2N3790
2N3791
2N3792
2N4340
2N4340S
2SK 150A
mg100g1al2
2SD1365
2SC2461 B
2sk30
2SC102
C366G
b1375
MG15G1AL2
1265N
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SC3133 cross reference
Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905
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2N4401
2N5401
2N5551
2SA1004
2SA1010
2SA1013
2SA1015
2SA1016
2SA1017
2SA1019
2SC3133 cross reference
Hitachi 2sc281
NEC D882
A564A
D1163A
2sC1815 cross reference
a628a
krc1211
KRA2203
NEC D288
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PDF
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DK53
Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
2SC4977
MJE102
BD699
2SA1046
BU808DFI equivalent
2n3055 replacement
MJ2955 replacement
BUH513
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DK53
Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
BU724AS
mje2055
2n3055 replacement
BUX98PI
BD263
BD699
BD292
2N5037
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B0411
Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864
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OCR Scan
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
B0411
B0733
THD200F1
dk52
2SC4977
2N5415 REPLACEMENT
TIP 2n3055
BD68D
SGS-Thomson cross reference
BUX37 THOMSON
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BU108
Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc
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BD676,
BD675,
BD676
BD676A
BD678
BD678A
BD680
BD680A
BD682
TIP73B
BU108
TRANSISTOR REPLACEMENT GUIDE BD676
BD676A application note
BU326
BU100
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electronic ballast with MJE13003
Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light
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BUD43B
BUD43B
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
electronic ballast with MJE13003
BU108
application notes MJE13005
NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247
mje13003 ballast
MJE2482
2SD675
2SC1419
BU326
BU100
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PDF
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2N5037
Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi
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BD808
BD810*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N5037
2SC1903
2SC2159
mje15033 replacement
bd7782
MJE2050
SDT7605
2SA835
BD279
svt6251
|
PDF
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MJ15003 300 watts amplifier
Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications
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MJE340
MJE350
MJD340*
MJD350*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
MJ15003 300 watts amplifier
ST T4 3580
MJD340 ST
mje34
2sd478
D45H8 EQUIVALENT
BUX98A
SE9302
MJE2482
2SC1419
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