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    2SC582 Search Results

    2SC582 Result Highlights (2)

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    2SC5820WU-TL-H Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, CMPAK, /Embossed Tape Visit Renesas Electronics Corporation
    2SC5820WU-TL-E Renesas Electronics Corporation Small Signal Bip-TRSs for High Frequency Amplifier, CMPAK, /Embossed Tape Visit Renesas Electronics Corporation
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    2SC582 Price and Stock

    ROHM Semiconductor 2SC5824T100Q

    TRANS NPN 60V 3A MPT3
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    ROHM Semiconductor 2SC5824T100R

    TRANS NPN 60V 3A MPT3
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    DigiKey 2SC5824T100R Digi-Reel 828 1
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    Verical 2SC5824T100R 17,617 224
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    Quest Components 2SC5824T100R 800
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    Avnet Silica 2SC5824T100R 16 Weeks 1,000
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    Chip One Stop 2SC5824T100R Cut Tape 17,617
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    ROHM Semiconductor 2SC5826TV2R

    TRANS NPN 60V 3A ATV
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    DigiKey 2SC5826TV2R Reel 2,500
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    ROHM Semiconductor 2SC5826TV2Q

    TRANS NPN 60V 3A ATV
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    Rochester Electronics LLC 2SC5820WU-TL-H

    RF TRANS NPN 4V 20GHZ CMPAK-4
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    DigiKey 2SC5820WU-TL-H Bulk 1,159
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    Find more 2SC582 price and stock on Findchips.com

    2SC582 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC582 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC582 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC582 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC582 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC582 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC582 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC582 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC582 Unknown Cross Reference Datasheet Scan PDF
    2SC582 Unknown Transistor Replacements Scan PDF
    2SC582 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC582 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC582 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC582 Unknown Vintage Transistor Datasheets Scan PDF
    2SC582 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC582 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC582 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC582 National Semiconductor Pro-Electron Transistor Datasheets Scan PDF
    2SC5820 Renesas Technology Transistor; Type: Amplifiers/Bipolar; VCEO (V): 4; Ic (A): 0.035; Pc (W): 0.05; hFE: 70 to 150; fT (GHz) typ: 20; Cob (pF) max: 0.15; NF (dB) typ: 1.15; Package: CMPAK-4 Original PDF
    2SC5820 Renesas Technology Silicon NPN Epitaxial Original PDF
    2SC5823 Sanyo Semiconductor General-Purpose Transistors Original PDF

    2SC582 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor Outline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> Features 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


    Original     		2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5824 Datasheet NPN 3.0A 60V Middle Power Transistor lOutline Parameter Value VCEO IC 60 3A MPT3 Base Collector Emitter 2SC5824 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA2071 3) Low VCE(sat) VCE(sat)=0.50V(Max.)


    Original     		2SC5824 SC-62) OT-89> 2SA2071 A/200mA) R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA2701 / 2SA2702 Datasheet PNP -3.0A -60V Middle Power Transistor lOutline Parameter Value VCEO IC -60V -3.0A MPT3 Collector CPT3 Base Collector Base Emitter Emitter 2SA2071 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SC5824 / 2SC5825


    Original     		2SA2701 2SA2702 2SA2071 SC-62) OT-89> 2SC5824 2SC5825 -500mV 2SA2072 SC-63) PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator R07DS0279EJ0300 Previous: REJ03G0758-0200 Rev.3.00 Mar 28, 2011 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure;


    Original     		2SC5820 R07DS0279EJ0300 REJ03G0758-0200) PTSP0004ZA-A R07DS0279EJ0300 PDF

    C5825

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5825 200mV 2SA2072. SC-63) OT-428> C5825 R1120A C5825 PDF

    C5825

    Abstract: transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073
    Text: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.


    Original     		2SC5825 SC-63) OT-428> 200mV 2SA2073 C5825 C5825 transistor C5825 2SA20 2SC5825 2SA2073 Transistor 2sa2073 PDF

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5


    Original     		2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100 PDF

    2SC5829

    Abstract: NP0A547
    Text: Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 3 0.10 1 0.35 (0.35) 1.00±0.05 (0.10) Display at No.1 lead • Basic Part Number • 2SC5829 x 2 1: Base (Tr1) 2: Emitter (Tr1) 3: Base (Tr2)


    Original     		NP0A547 2SC5829 2SC5829 NP0A547 PDF

    C5825

    Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
    Text: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 zDimensions (Unit : mm) zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and


    Original     		2SC5825 200mV 2SA2073 SC-63) OT-428> C5825 C5825 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SC5829 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 2 1 0.39+0.01 −0.03 1.00±0.05 0.25±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		2002/95/EC) 2SC5829 SJC00287AED PDF

    2SA2071

    Abstract: 2SC5824 T100
    Text: 2SC5824 Transistor Power transistor 60V, 3A 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5


    Original     		2SC5824 200mV 200mA) 2SA2071. 2SA2071 2SC5824 T100 PDF

    2SC5829

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Allowing the small current and low voltage operation • High transition frequency fT


    Original     		2002/95/EC) 2SC5829 2SC5829 PDF

    C5825

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5825 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5825 200mV 2SA2072. SC-63) OT-428> C5825 R1010A C5825 PDF

    2602

    Abstract: 11308 2SC5826
    Text: SPICE PARAMETER 2SC5826 by ROHM TR Div. * 2SC5826 NPN BJT model * Date: 2006/12/04 .MODEL 2SC5826 NPN + IS=3.3000E-12 + BF=248.92 + VAF=100 + IKF=5.2602 + ISE=3.3000E-12 + NE=1.7608 + BR=7.4847 + VAR=100 + IKR=1.1308 + ISC=8.9866E-12 + NC=3.3932 + NK=.87107


    Original     		2SC5826 Q2SC5826 3000E-12 9866E-12 000E-3 2090E-3 35E-12 685E-12 2602 11308 2SC5826 PDF

    2SC5829

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5829 Silicon NPN epitaxial planar type For high speed switching Unit: mm 3 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin


    Original     		2002/95/EC) 2SC5829 2SC5829 PDF

    2SC5820

    Abstract: application of IC 723 09 06 848 0521 BB 1507 FL
    Text: 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator REJ03G0758-0200 Previous ADE-208-1604A Rev.2.00 Aug.10.2005 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz


    Original     		2SC5820 REJ03G0758-0200 ADE-208-1604A) PTSP0004ZA-A 2SC5820 application of IC 723 09 06 848 0521 BB 1507 FL PDF

    c5826

    Abstract: 2SC5826 2SA2073 2SA20
    Text: 2SC5826 Transistors Power transistor 60V, 3A 2SC5826 zExternal dimensions (Unit : mm) ATV 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 zFeatures 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA)


    Original     		2SC5826 65Max. 200mV 2SA2073 C5826 c5826 2SC5826 2SA2073 2SA20 PDF

    c5826

    Abstract: No abstract text available
    Text: Power transistor 60V, 3A 2SC5826 Dimensions (Unit : mm) Features 1) High speed switching. (tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 0.2mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5826 200mV 2SA2073 C5826 R1120A c5826 PDF

    2SA2071

    Abstract: 2SC5824 T100
    Text: Power transistor 60V, 3A 2SC5824 Dimensions (Unit : mm) Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load.


    Original     		2SC5824 200mV 200mA) 2SA2071. R1120A 2SA2071 2SC5824 T100 PDF

    C5825

    Abstract: 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073
    Text: 2SC5825 Transistors Power transistor 60V, 3A 2SC5825 !External dimensions (Unit : mm) 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 1.0 0.5 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 0.75 !Features 1) High speed switching.


    Original     		2SC5825 SC-63) OT-428> 200mV 2SA2073 C5825 C5825 2SC5825 transistor C5825 2SA2073 Transistor 2sa2073 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator R07DS0279EJ0300 Previous: REJ03G0758-0200 Rev.3.00 Mar 28, 2011 Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure;


    Original     		2SC5820 R07DS0279EJ0300 REJ03G0758-0200) PTSP0004ZA-A PDF

    2SC5829

    Abstract: NP0A547
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors NP0A547 Silicon NPN epitaxial planar type Unit: mm For high-speed switching 0.12+0.03 -0.02 4 2 1.00±0.05 3 0.10 1 (0.35) (0.35) 1.00±0.05 • 2SC5829 x 2 1: Base (Tr1)


    Original     		2002/95/EC) NP0A547 2SC5829 2SC5829 NP0A547 PDF

    2SC5820

    Abstract: str 1195 IC STR 404
    Text: 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator ADE-208-1604A Z Rev.1 Nov. 2002 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz


    Original     		2SC5820 ADE-208-1604A D-85622 D-85619 2SC5820 str 1195 IC STR 404 PDF