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    2SC5810 Search Results

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    2SC5810 Price and Stock

    Toshiba America Electronic Components 2SC5810(TE12L,F)

    Trans GP BJT NPN 50V 1A 2000mW 4-Pin(3+Tab) PW-Mini T/R
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    Verical 2SC5810(TE12L,F) 5,975 327
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    • 1000 $0.2236
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    Quest Components 2SC5810(TE12L,F) 4,780
    • 1 $0.62
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    • 100 $0.62
    • 1000 $0.248
    • 10000 $0.217
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    EBV Elektronik 2SC5810(TE12L,F) 29 Weeks 2,000
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    Toshiba America Electronic Components 2SC5810(TE12L,ZF)

    Transistor Silicon NPN Epitaxial Type
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SC5810(TE12L,ZF) 2,890 463
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    2SC5810(TE12L,ZF) 455 164
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    Quest Components 2SC5810(TE12L,ZF) 2,312
    • 1 $0.95
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    Chip1Stop 2SC5810(TE12L,ZF) Cut Tape 455
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    Toshiba America Electronic Components 2SC5810(T2LNITOK,F

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SC5810(T2LNITOK,F 2,170
    • 1 $0.6
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    • 100 $0.27
    • 1000 $0.18
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    Toshiba America Electronic Components 2SC5810

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    Win Source Electronics 2SC5810 15,950
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    Toshiba America Electronic Components 2SC5810 TE12L

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics 2SC5810 TE12L 15,750
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    2SC5810 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5810 Toshiba NPN Transistor Original PDF
    2SC5810 Toshiba Transistor Original PDF
    2SC5810(TE12L,F) Toshiba 2SC5810 - TRANSISTOR NPN 50V 1A SC-62 Original PDF

    2SC5810 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5810 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)


    Original     		PDF 2SC5810 SC-62 2SC5810

    Untitled

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 SC-62

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5810 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)


    Original     		PDF 2SC5810 SC-62 20070701-JA 2SC5810

    Untitled

    Abstract: No abstract text available
    Text: 2SC5810 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5810 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.17 V (最大)


    Original     		PDF 2SC5810

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC5810 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original     		PDF 2SC5810

    Untitled

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.1 A · Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810

    2SC5810

    Abstract: No abstract text available
    Text: 2SC5810 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5810 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.1 A • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max)


    Original     		PDF 2SC5810 2SC5810

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


    Original     		PDF TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    TB6815FTG

    Abstract: out8 tb6815f
    Text: TB6815FTG 東芝BiCD集積回路 シリコン モノリシック TB6815FTG 6bit 入力 12bit 出力レベルシフタアレイ基準電圧用バッファ混載 IC 特 長 ・6bit 入力 12bit 出力のレベルシフタと 2ch の基準電圧 用バッファを混載しています。


    Original     		PDF TB6815FTG 12bit TB6815FTG Sn-37Pb OUT10 OUT11 OUT12 out8 tb6815f

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    SSOP30

    Abstract: BMP89A400010A-G TCA62746AFG/AFNG
    Text: EYE 6 June 2007 東芝半導体情報誌アイ 2007年6月号 VOLUME 178 CONTENTS 新製品情報 広出力電圧範囲ロジックレベルシフタアレイ .2 FLASHマイコン用 名刺サイズの小型オンチップデバッグエミュレータ.3


    Original     		PDF TB6815FNG SSOP30-P-300-0 OUT10 OUT11 OUT12 6bit12bit 0mmSSOP24 TB62746AFG) SSOP24 SSOP30 BMP89A400010A-G TCA62746AFG/AFNG

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    TPC6801

    Abstract: WJ 5252 F Battery chargers for portable dvd china SOT89 PNP marking GA MARKING WB SOT-89 2SC5703 TOSHIBA BIPOLAR POWER TRANSISTOR 2SA2056 2SA2058 2SC5738
    Text: New Product Guide Low-Saturation-Voltage Power Transistors in small surface-mount packages PRODUCT GUIDE Low-Saturation-Voltage Power Transistors Overview Features These newly developed low-saturation-voltage transistors are based on the low-withstanding voltage Hi-Met III (3rd-generation high-efficiency mesh


    Original     		PDF