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    2SC57 Price and Stock

    Rochester Electronics LLC 2SC5750-T1-A

    RF TRANS NPN 6V 15GHZ SOT-343
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    DigiKey 2SC5750-T1-A Bulk 129,000 955
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    Rochester Electronics LLC 2SC5752-T1-A

    RF TRANS NPN 6V 12GHZ SOT-343
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    DigiKey 2SC5752-T1-A Bulk 24,000 417
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    Rochester Electronics LLC 2SC5763M

    TRANS NPN 400V 7A TO-220AB
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    DigiKey 2SC5763M Bulk 3,603 452
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    onsemi 2SC5707-TL-E

    TRANS NPN 50V 8A TP-FA
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    DigiKey 2SC5707-TL-E Cut Tape 3,446 1
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    2SC5707-TL-E Digi-Reel 3,446 1
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    Newark 2SC5707-TL-E Cut Tape 420 1
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    Onlinecomponents.com 2SC5707-TL-E
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    TME 2SC5707-TL-E 1
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    Ameya Holding Limited 2SC5707-TL-E 1,297
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    Avnet Silica 2SC5707-TL-E 700 11 Weeks 700
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    EBV Elektronik 2SC5707-TL-E 12 Weeks 700
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    Toshiba America Electronic Components 2SC5712(TE12L,F)

    TRANS NPN 50V 3A PW-MINI
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    DigiKey 2SC5712(TE12L,F) Cut Tape 1,980 1
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    2SC5712(TE12L,F) Reel 1,000 1,000
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    Mouser Electronics 2SC5712(TE12L,F) 1,965
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    Quest Components 2SC5712(TE12L,F) 40,232
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    EBV Elektronik 2SC5712(TE12L,F) 17 Weeks 1,000
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    2SC57 Datasheets (288)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC57 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC57 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC57 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC57 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC57 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC57 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC57 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC57 Unknown Cross Reference Datasheet Scan PDF
    2SC570 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC570 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC570 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC570 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC570 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC570 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC570 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC570 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5700 Hitachi Semiconductor Silicon NPN Transistor Original PDF
    2SC5700 Renesas Technology Silicon NPN Epitaxial Transistor VHF/UHF Wide Band Amplifier Original PDF
    2SC5700 Renesas Technology Silicon NPN Epitaxial VHF/UHF wide band amplifier Original PDF
    2SC5700 Renesas Technology Silicon NPN Epitaxial VHF/UHF wide band amplifier Original PDF
    ...

    2SC57 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC5703

    Abstract: No abstract text available
    Text: 2SC5703 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5703 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = 0.12 V (最大)


    Original     		2SC5703 2SC5703 PDF

    2SC5765

    Abstract: No abstract text available
    Text: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		2SC5765 2SC5765 PDF

    2SC5713

    Abstract: No abstract text available
    Text: 2SC5713 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5713 ○ 高速スイッチング用 ○ DC-DC コンバータ用 ○ ストロボフラッシュ用 • 単位: mm : hFE = 400~1000 IC = 0.5 A 直流電流増幅率が高い。


    Original     		2SC5713 SC-62 20070701-JA 2SC5713 PDF

    2SC5784

    Abstract: No abstract text available
    Text: 2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.15 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		2SC5784 2SC5784 PDF

    2SC5720

    Abstract: No abstract text available
    Text: 2SC5720 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5720 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.25 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)


    Original     		2SC5720 2SC5720 PDF

    2SC5784

    Abstract: No abstract text available
    Text: 2SC5784 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5784 ○ 高速スイッチング用 ○ DC-DC コンバータ用 • 単位: mm 直流電流増幅率が高い。 : hFE = 400~1000 IC = 0.15 A • コレクタ･エミッタ間飽和電圧が低い。


    Original     		2SC5784 2SC5784 PDF

    2SC5788

    Abstract: C5788
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC5788 Silicon NPN epitaxial planar type Unit: mm 10.0±0.2 2.5±0.1 13.0±0.2 • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector to emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SC5788 2SC5788 C5788 PDF

    6914

    Abstract: 2044B 2SA2043 2SC5709 IT00171
    Text: Ordering number : ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B [2SA2043 / 2SC5709]


    Original     		ENN6914 2SA2043 2SC5709 2045B 2SC5709] 2044B 6914 2044B 2SC5709 IT00171 PDF

    2SC5435

    Abstract: 2SC5786 NEC 7815
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA860TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5786) Q1: High-gain transistor


    Original     		PA860TC 2SC5435, 2SC5786) S21e2 2SC5435 2SC5786 2SC5435 2SC5786 NEC 7815 PDF

    2SC5436

    Abstract: 2SC5786 4550 nec IC 7432 data
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA861TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor


    Original     		PA861TC 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 2SC5436 2SC5786 4550 nec IC 7432 data PDF

    2sc5703

    Abstract: No abstract text available
    Text: 2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)


    Original     		2SC5703 2sc5703 PDF

    2SC5717

    Abstract: 2-16E3A
    Text: 2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications. • High voltage: VCBO = 1500 V • Low saturation voltage: VCE sat = 3 V (max)


    Original     		2SC5717 2SC5717 2-16E3A PDF

    2sc5706

    Abstract: 2SC5706 equivalent 2SA2039 transistor 2sa2039 ENN6912 2044B 2sc5706 equivalent transistor 2sc5706 transistor VR10
    Text: Ordering number : ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. unit : mm 2045B


    Original     		ENN6912 2SA2039 2SC5706 2045B 2044B 2SC5706] 2sc5706 2SC5706 equivalent 2SA2039 transistor ENN6912 2044B 2sc5706 equivalent transistor 2sc5706 transistor VR10 PDF

    smd transistor marking SL6

    Abstract: SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640
    Text: HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C Z Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700


    Original     		HTT1115S 1440C 2SC5700 2SC5757 D-85622 D-85619 smd transistor marking SL6 SMD MARKING CODE hitachi SMD MARKING CODE sg 2SC5700 2SC5757 HTT1115S MARKING CODE SMD IC DSA003640 Hitachi DSA003640 PDF

    2SC5676

    Abstract: 2SC5737 MARKING VT
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA859TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5676) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA859TD 2SC5737, 2SC5676) S21e2 2SC5737 2SC5676 PA859TD-T3 2SC5676 2SC5737 MARKING VT PDF

    nec 14305

    Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


    Original     		2SC5751 2SC5751-T2 nec 14305 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON RF TWIN TRANSISTOR PA861TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz


    Original     		PA861TD 2SC5436, 2SC5786) S21e2 2SC5436 2SC5786 PU10057EJ02V0DS PDF

    2SC5778

    Abstract: No abstract text available
    Text: Ordering number : ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • Package Dimensions unit : mm 2174A [2SC5778] 5.6 3.4 16.0 3.1 0.8 21.0


    Original     		ENN6992 2SC5778 2SC5778] 2SC5778 PDF

    2SC5787

    Abstract: transistor 4580 2SC5787-T3
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz


    Original     		2SC5787 S21e2 2SC5787-T3 2SC5787 transistor 4580 2SC5787-T3 PDF

    2SC5600

    Abstract: 2SC5737 IC 14558 IC 2801 UPA858TD-T3
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • 2 different built-in transistors (2SC5737, 2SC5600) Q1: Built-in low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz


    Original     		PA858TD 2SC5737, 2SC5600) S21e2 2SC5737 2SC5600 PA858TD-T3 2SC5600 2SC5737 IC 14558 IC 2801 UPA858TD-T3 PDF

    2SC5435

    Abstract: 2SC5745 0782 K 2564 nec 2401 831
    Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA854TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5435, 2SC5745) Q1: High gain transistor suited for buffer applications


    Original     		PA854TC 2SC5435, 2SC5745) S21e2 2SC5435 2SC5745 2SC5435 2SC5745 0782 K 2564 nec 2401 831 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: ENN6994 | NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed. ♦High breakdown voltage VcB0 = 1 600V . * High reliability^Adoption of HVP process).


    OCR Scan     		ENN6994 2SC5792 2SC5792] PDF

    2SC5777

    Abstract: TA-3323
    Text: Ordering number : ENN6991 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1600V . High reliability (Adoption of HVP process).


    Original     		ENN6991 2SC5777 2SC5777] 2SC5777 TA-3323 PDF

    2SC5725

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE(sat)


    Original     		2002/95/EC) 2SC5725 2SC5725 PDF