2SC555 Search Results

c5550

Abstract: 2SC5550
Contextual Info: 2SC5550 東芝トランジスタ シリコンNPN三重拡散形 2SC5550 ○ インバータ照明用高速スイッチング 単位: mm • RCC 回路に最適 小電流のときに hFE を保証しています。 : hFE = 13 (最小) (IC = 1 mA) • 高速です。

YH 388

Abstract: 828 npn 2SC5554 DSA003643
Contextual Info: 2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 Z 1st. Edition Oct. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “YH-”. 1. Emitter

2SC5557

Contextual Info: Transistor 2SC5557 Silicon NPN epitaxial planar type Unit: mm For low-noise RF amplifier 0.10+0.05 –0.02 0.33+0.05 –0.02 0.80±0.05 5˚ • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager

Hitachi DSA002756

Contextual Info: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 Z 1st. Edition Nov. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline Note: Marking is “ZD-”. 2SC5555 Absolute Maximum Ratings (Ta = 25°C)

2SC5557

Contextual Info: Transistor 2SC5557 Silicon NPN epitaxial planar type Unit: mm For low-noise RF amplifier 0.33+0.05 –0.02 0.10+0.05 –0.02 5˚ M Di ain sc te on na tin nc ue e/ d • High transition frequency fT • High gain of 8.2 dB and low noise of 1.8 dB at 3 V • Optimum for RF amplification of a portable telephone and pager

2SC5555

Abstract: DSA003643
Contextual Info: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 Z 1st. Edition Oct. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “ZD-”. 1. Emitter

2SC5550

Contextual Info: TO SH IBA 2SC5550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5550 HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM Suitable for Rqq Circuit. Guaranteed small current hjrg : hjPE = 13 (Min.) (Iq = 1mA) High Speed : tr = 0.5/^s (Max.), tf=0.3^s (Max.) (l£ = 0.24A)

2SC5551

Abstract: TA-2665
Contextual Info: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features Collector-base voltage (Emitter open) VCBO 15 V Collector-emitter voltage (Base open)

2SC5555

Abstract: 2SC5555ZD-TR-E PUSF0003ZA-A SC-89
Contextual Info: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier REJ03G0748-0200 Previous ADE-208-693 Rev.2.00 Aug.10.2005 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V) Outline RENESAS Package code: PUSF0003ZA-A

rcc circuit

Abstract: 2SC5550 c5550
Contextual Info: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)

LA 7687 a

Contextual Info: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Package Dimensions Features •High f j : fy=3.5GHz typ . •Large current : (Ic=300mA). •Large allowable collector dissipation (1,3W max)

Contextual Info: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Rating Collector-emitter voltage E-B short VCES 1 700 V Collector-emitter voltage (Base open) VCEO 600 V Emitter-base voltage (Collector open) VEBO

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5556 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.40+0.10 –0.05 • Features 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low noise figure NF

Contextual Info: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C

2SC5553

Contextual Info: Power Transistors 2SC5553 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 M Di ain sc te on na tin nc ue e/ d φ 3.2±0.1 Collector-emitter voltage Base open Emitter-base voltage (Collector open) Base current Collector current

c5550

Abstract: rcc circuit
Contextual Info: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)

HITEC 523

Abstract: 2SC5555 Hitachi DSA00398
Contextual Info: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-693 Z 1st. Edition Nov. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline MFPAK 3 1 2 Note: Marking is “ZD-”. 1. Emitter

Contextual Info: 2SC5550 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5550 High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit guaranteed small current hFE • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)

zo 107

Abstract: 2SC5555 2SC5555ZD-TR-E PUSF0003ZA-A SC-89
Contextual Info: 2SC5555 Silicon NPN Epitaxial VHF / UHF wide band amplifier REJ03G0748-0300 Rev.3.00 Nov 14, 2006 Features • Super compact package; 1.4 x 0.8 × 0.59 mm • Capable low voltage operation; (VCE = 1 V) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R )

Contextual Info: TOSHIBA 2SC5550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5550 Unit in mm HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM 8.3MAX. 0 3.1 ± 0.1 Suitable for R qq Circuit. Guaranteed small current hpg : hpE = 13 (Min.) (Iq = 1mA)

Hitachi DSA002756

Contextual Info: 2SC5554 Silicon NPN Epitaxial VHF / UHF wide band amplifier ADE-208-692 Z 1st. Edition Nov. 1998 Features • Super compact package; (1.4 x 0.8 × 0.59mm) • Capable low voltage operation ; (V CE = 1V) Outline Note: Marking is “YH-”. 2SC5554 Absolute Maximum Ratings (Ta = 25°C)

A11182

Abstract: 2sc5551a A1118-4/4
Contextual Info: 2SC5551A Ordering number : ENA1118A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max)

2SC5552

Contextual Info: Power Transistors 2SC5552 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Unit Collector-base voltage Emitter open VCBO 1 700 V Collector-emitter voltage (E-B short) VCES 1 700 V Collector-emitter voltage (Base open) VCEO