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    2SC5358 TRANSISTOR SPECIFICATION Search Results

    2SC5358 TRANSISTOR SPECIFICATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2SC5358 TRANSISTOR SPECIFICATION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C5358

    Abstract: 2SC5358 2SA1986 2SC535
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C


    Original     		2SC5358 2SA1986 C5358 2SC5358 2SA1986 2SC535 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C


    Original     		2SC5358 2SA1986 PDF

    C5358

    Abstract: 2SA1986 2SC5358
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C


    Original     		2SC5358 2SA1986 C5358 2SA1986 2SC5358 PDF

    C5358

    Abstract: No abstract text available
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C


    Original     		2SC5358 2SA1986 2-16C1A C5358 PDF

    2SC5358

    Abstract: 2SC5358 TRANSISTOR SPECIFICATION 2SA1986 80W TRANSISTOR AUDIO AMPLIFIER
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5358 APPLICATIONS


    Original     		2SA1986 -230V 2SC5358 -230V 2SC5358 2SC5358 TRANSISTOR SPECIFICATION 2SA1986 80W TRANSISTOR AUDIO AMPLIFIER PDF

    C5358

    Abstract: No abstract text available
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C


    Original     		2SC5358 2SA1986 2-16C1A C5358 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C


    Original     		2SC5358 2SA1986 PDF

    A1986

    Abstract: 2SA1986 2SC5358
    Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		2SA1986 2SC5358 A1986 2SA1986 2SC5358 PDF

    A1986

    Abstract: 2SA1986 2SC5358
    Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		2SA1986 2SC5358 A1986 2SA1986 2SC5358 PDF

    A1986

    Abstract: No abstract text available
    Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		2SA1986 2SC5358 2-16C1A A1986 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		2SA1986 2SC5358 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage


    Original     		2SA1986 2SC5358 2-16C1A PDF

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943 PDF

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a PDF

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    2SA1986

    Abstract: 2SC5358
    Text: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C


    OCR Scan     		2SC5358 2SA1986 2SA1986 2SC5358 PDF

    2SA1986

    Abstract: 2SC5358
    Text: TOSHIBA 2SC5358 TOSHIBA TRANSISTOR 2SC5358 POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2 % 2 ,0± 0.3


    OCR Scan     		2SC5358 2SA1986 I--2--31 2SA1986 2SC5358 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		2SC5358 2SA1986 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 M A X^ . • • 0 3 .2 ± 0 .2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		2SC5358 2SA1986 2-16C1A PDF

    2SA1986

    Abstract: 2SC5358
    Text: 2SA1986 TO SH IBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C


    OCR Scan     		2SA1986 2SC5358 2SA1986 2SC5358 PDF

    ta 80w

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1986 2 SA 1 9 8 6 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.9 MAX. • Com plem entary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier 03.2 ±0.2 Output St£lg6. 2.0±0.3


    OCR Scan     		2SA1986 2SC5358 ta 80w PDF

    2SC5358

    Abstract: 2SA1986
    Text: 2SA1986 TOSHIBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. % 2 ,0± 0.3 MAXIMUM RATINGS Ta = 25°C


    OCR Scan     		2SA1986 2SC5358 2SC5358 2SA1986 PDF