2SC5358 SPECIFICATION Search Results

2SA1986

Abstract: 2SC5358
Contextual Info: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C

C5358

Abstract: 2SC5358 2SA1986 2SC535
Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Maximum Ratings Tc = 25°C

2SA1986

Abstract: 2SC5358
Contextual Info: TOSHIBA 2SC5358 TOSHIBA TRANSISTOR 2SC5358 POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 03.2 ± 0 .2 % 2 ,0± 0.3

Contextual Info: TO SH IBA 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C

C5358

Abstract: 2SA1986 2SC5358
Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C

C5358

Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Tc = 25°C

C5358

Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC5358 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings Ta = 25°C

2SC5358

Abstract: 2SC5358 TRANSISTOR SPECIFICATION 2SA1986 80W TRANSISTOR AUDIO AMPLIFIER
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1986 DESCRIPTION •High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Complement to Type 2SC5358 APPLICATIONS

Contextual Info: T O SH IB A 2SC5358 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5358 Unit in mm 1 5.9 M A X^ . • • 0 3 .2 ± 0 .2 Complementary to 2SA1986 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

2SA1986

Abstract: 2SC5358 EMIC
Contextual Info: Inchange Semiconductor Product Specification 2SA1986 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5358 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage

2SA1986

Abstract: 2sa198 2SC5358
Contextual Info: SavantIC Semiconductor Product Specification 2SA1986 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC5358 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

2SA1986

Abstract: 2SC5358
Contextual Info: Product Specification www.jmnic.com 2SC5358 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SA1986 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage

2sc5358

Abstract: 2SA1986
Contextual Info: SavantIC Semiconductor Product Specification 2SC5358 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1986 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage

2sc5358 specification

Abstract: 2SA1986 2SC5358
Contextual Info: Inchange Semiconductor Product Specification 2SC5358 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SA1986 APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio frequency amplifier output stage

Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage

A1986

Abstract: 2SA1986 2SC5358
Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage

A1986

Abstract: 2SA1986 2SC5358
Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage

A1986

Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage

Contextual Info: 2SA1986 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1986 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5358 • Recommended for 80-W high-fidelity audio frequency amplifier output stage

2SA1986

Abstract: 2SC5358
Contextual Info: 2SA1986 TO SH IBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Tc = 25°C

ta 80w

Contextual Info: TOSHIBA 2SA1986 2 SA 1 9 8 6 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.9 MAX. • Com plem entary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier 03.2 ±0.2 Output St£lg6. 2.0±0.3

2SC5358

Abstract: 2SA1986
Contextual Info: 2SA1986 TOSHIBA 2 S A 1 986 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. '— • Complementary to 2SC5358 • Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. % 2 ,0± 0.3 MAXIMUM RATINGS Ta = 25°C