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    2SC531 Search Results

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    2SC531 Price and Stock

    Rochester Electronics LLC 2SC5310-5-TB-E

    BIP NPN 1A 25V
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    DigiKey 2SC5310-5-TB-E Bulk 1,402
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    Rochester Electronics LLC 2SC5310-6-TB-E

    NPN EPITAXIAL PLANAR SILICON
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    DigiKey 2SC5310-6-TB-E Bulk 1,110
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    Aptina Imaging 2SC5310-6-TB-E

    2SC5310-6-TB-E
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    Verical 2SC5310-6-TB-E 27,000 1,358
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    Aptina Imaging 2SC5310-5-TB-E

    2SC5310-5-TB-E
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    Verical 2SC5310-5-TB-E 21,000 1,716
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    2SC5310-5-TB-E 18,000 1,716
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    2SC5310-5-TB-E 6,000 1,716
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    2SC5310-5-TB-E 3,000 1,716
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    onsemi 2SC5310-6-TB-E

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    Quest Components 2SC5310-6-TB-E 39,797
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    Rochester Electronics 2SC5310-6-TB-E 27,000 1
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    2SC531 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC531 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC531 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC531 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC531 Unknown Cross Reference Datasheet Scan PDF
    2SC531 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC531 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC531 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC531 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC531 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5310 Kexin NPN Epitaxial Planar Silicon Transistors Original PDF
    2SC5310 Sanyo Semiconductor NPN Epitaxial Planar Silicon Transistors DC-DC Con Original PDF
    2SC5310 TY Semiconductor NPN Epitaxial Planar Silicon Transistors - SOT-23 Original PDF
    2SC5310 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5310 Sanyo Semiconductor CP (Chip Pack) Transistors Scan PDF
    2SC5310 Sanyo Semiconductor CP Type Transistors Scan PDF
    2SC5312 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5313 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5314 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5315 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5315 Unknown NPN Transistor Scan PDF

    2SC531 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB f = 2 GHz • High gain: Ga = 11.5dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SC5319

    2SA1973

    Abstract: 2SC5310 ITR08234 ITR08235
    Text: Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching.


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    PDF ENN5613 2SA1973/2SC5310 2018B 2SA1973/2SC5310] 2SA1973 2SA1973 2SC5310 ITR08234 ITR08235

    2SC5317FT

    Abstract: No abstract text available
    Text: 2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF-UHF Band Low Noise Amplifier Applications chip: fT = 16 GHz series • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC5317FT 2SC5317FT

    2SA1973

    Abstract: 2SA19 2SC5310 ITR08234 ITR08235 60100ts 2SC53
    Text: Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Package Dimensions • Adoption of FBET, MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching.


    Original
    PDF ENN5613 2SA1973/2SC5310 2018B 2SA1973/2SC5310] 2SA1973 2SA1973 2SA19 2SC5310 ITR08234 ITR08235 60100ts 2SC53

    Untitled

    Abstract: No abstract text available
    Text: MT4S23U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U Unit: mm VHF~UHF Band Low Noise Amplifier Applications • Low Noise Figure: NF = 1.4dB typ. (@f = 2 GHz) • High Gain: |S21e| = 12dB (typ.) (@f = 2 GHz) • Compatible with 2SC5319 2


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    PDF MT4S23U 2SC5319

    NF 747

    Abstract: 2SC5319 hfe 4049 V722 BB34 GA 1619
    Text: TO SHIBA 2SC5319 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5319 V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS Unit in mm 2.1 ± 0.1 • Low Noise Figure :N F = 1.3dB f=2GHz • High Gain : Ga = 11.5dB (f=2GHz) 1.25 ±0.1 13 -¡3 M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SC5319 NF 747 2SC5319 hfe 4049 V722 BB34 GA 1619

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5317 2Ghz amplifier
    Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 • • r0.8 ±, 0 .1i, Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


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    PDF 2SC5317 16GHz VHF-UHF Band Low Noise Amplifier 2SC5317 2Ghz amplifier

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series • Low Noise Figure :NF = i.3dB (f=2GHz) High Gain :|S21el2=9dB (f=2GHz) 1.2 ± 0.05


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    PDF 2SC5317FT 16GHz S21el2

    Untitled

    Abstract: No abstract text available
    Text: 2SC5315 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2 .5 - 0 . 3 • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


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    PDF 2SC5315 16GHz

    Untitled

    Abstract: No abstract text available
    Text: 2SC5317 TO SHIBA 2SC5317 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F -U H F B AN D LO W NOISE AM PLIFIER APPLICATIONS CHIP : f T = 16GHz series 1.6 ± 0.2 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


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    PDF 2SC5317 16GHz

    2SC5316

    Abstract: No abstract text available
    Text: 2SC5316 TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C5 3 1 6 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series U nit in mm 2.1 ± 0 .1 ,1.25 ± 0.1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain


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    PDF 2SC5316 16GHz 2SC5316

    2SC5318

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE 2SC5318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.2 2.9-0.3 -fr • Low Noise Figure • High Gain : NF = 1.3 dB (f = 2 GHz) : Ga = 11.5 dB (f = 2 GHz)


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    PDF 2SC5318 2SC5318

    2SC5315

    Abstract: No abstract text available
    Text: 2SC5315 TO SH IBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE 2SC5315 Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series + 0.5 2.5-0.3 + 0.25 • • l<1-5 - 0-15. Low Noise Figure : NF = 1.3 dB (f = 2 GHz)


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    PDF 2SC5315 2SC5315

    OA72

    Abstract: OA55 2SC5319 IC 7361 ic 747 cn 4049 toshiba
    Text: TOSHIBA 2SC5319 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5319 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 2.1 ±0 .1 • Low Noise Figure : NF = 1.3 dB f = 2 GHz • High Gain :G a = 11.5 dB (f = 2 GHz) 1.25 ± 0.1 - ¡3


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    PDF 2SC5319 OA72 OA55 2SC5319 IC 7361 ic 747 cn 4049 toshiba

    2SC5317

    Abstract: No abstract text available
    Text: 2SC5317 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16GHz series 1.6 ± 0.2 r , i 0.8 ± 0 . 1, • • Low Noise Figure : NF = 1.3dB (f=2GHz) High Gain : Ga = 9dB (f=2GHz)


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    PDF 2SC5317 16GHz 2SC5317

    lm 2094

    Abstract: LM 3339
    Text: TO SH IB A 2SC5319 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5319 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : N F = 1.3dB f=2GHz • High Gain :G a —11.5dB (f—2GHz) Unit in mm 2.1 + 0.1 , 1.25 ±0.1 tn MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5319 lm 2094 LM 3339

    2SC5315

    Abstract: No abstract text available
    Text: 2SC5315 TO SHIBA TENTATIVE 2SC5315 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS CHIP : fT = 16GHz series + 0.5 2.5-0.3 + 0.25 • • , 1-5-°-15.| Low Noise Figure : NF = 1.3dB (f=2GHz)


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    PDF 2SC5315 16GHz J-5-0-15, 2SC5315

    BV722

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5319 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5319 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure :N F = 1.3dB f=2GHz • High Gain :G a = 11.5dB (f=2GHz) Unit in mm 2.1 ± 0.1 1.25 ±0.1 13 -¡3 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5319 BV722

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5317 T O SH IBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE <;r s 3 1 7 MT V • m V H F -U H F B A N D LOW NOISE AM PLIFIER APPLICATIONS U n it in mm 3 f l . M T U 1 ET 2 M IC R O W A V E CHARACTERISTICS Ta = 25°C CHARACTERISTIC Transition Frequency


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    PDF 2SC5317 --15mA,

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5316 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U n it in mm CHIP : fT = 16GHz series 2.1 ±0.1 ,1.25 ± 0.1, • Low Noise Figure : NF = 1.3dB (f=2GHz) • High Gain :


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    PDF 2SC5316 16GHz

    B F2g

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5317F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 3 <;c 5 3 1 7 F W V W • » ■ V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : f T = 16GHz series Low Noise Figure :N F = 1 .3 d B (f=2G H z) H igh Gain :|S 2 l e|2= 9dB (f=2G H z)


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    PDF 2SC5317F 16GHz B F2g

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5318 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5318 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS U nit in mm + 0.2 • Low Noise Figure 2.9-0.3 : N F = 1.3dB f=2GHz II • High Gain :G a —11.5dB (f—2GHz) MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SC5318

    2SC5316

    Abstract: No abstract text available
    Text: TO SH IBA TENTATIVE 2SC5316 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC 5316 VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series • • U nit in mm 2.1 ±0.1 I m —r 1 o +| +1 m O o — Low Noise Figure : NF = 1.3 dB (f = 2 GHz)


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    PDF 2SC5316 2SC5316

    2SC5317FT

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5317FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5317FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS CHIP : fT = 16 GHz series 1.2 ±0 .0 5 • • U.O :t u .u o Low Noise Figure : NF = 1.3 dB (f = 2 GHz) High Gain


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    PDF 2SC5317FT 0022gllectual 2SC5317FT