2SC5242 TRANSISTOR Search Results

Contextual Info: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

C5242 TOSHIBA

Abstract: c5242 TOSHIBA C5242 Toshiba transistor c5242 transistor c5242 toshiba audio power amplifier 2SA1962 2SC5242 NPN Transistor 2sc5242
Contextual Info: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

C5242 TOSHIBA

Abstract: C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor
Contextual Info: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

2SC5242

Abstract: 2SA1962 Toshiba 2SC5242
Contextual Info: TO SH IBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 POWER AMPLIFIER APPLICATIONS • High Collector Breakdown Voltage : V 0 e q = 23OV Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier

Contextual Info: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

c5242

Abstract: C5242 TOSHIBA transistor c5242 TOSHIBA c5242
Contextual Info: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

2SA1962 TOSHIBA

Abstract: 2SA1962 2SC5242 I25L Toshiba 2SC5242
Contextual Info: TO SH IBA 2SC5242 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 • High Collector Breakdown Voltage : V 0 e q = 23OV Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier

C5242

Abstract: transistor c5242 C5242 TOSHIBA TOSHIBA C5242 NPN Transistor 2sc5242 Toshiba transistor c5242 2SA1962 2SC5242 2SA1962 TOSHIBA
Contextual Info: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

NPN Transistor 2sc5242

Abstract: transistor 2sc5242 2SA1962 2SC5242 80W TRANSISTOR AUDIO AMPLIFIER
Contextual Info: TOSHIBA 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 MAX. • • • High Collector Breakdown Voltage : VCEO“ 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier

2SC5242

Contextual Info: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

Contextual Info: T O SH IB A 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5.9 M A X. • High Collector Breakdown Voltage : VCEO = 230V Min. • Complementary to 2SA1962 • Recommend for 80W High Fidelity Audio Frequency Amplifier

NPN Transistor 2sc5242

Abstract: 2SC5242
Contextual Info: T O SH IB A 2SC5242 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5242 Unit in mm POWER AMPLIFIER APPLICATIONS 1 5 .9 M A X . • • • 0 3 .2 ± 0.2 High Collector Breakdown Voltage : VCEO = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier

Audio Output Transistor Amplifier

Abstract: 80w audio 2SA1962 2SC5242
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications

NPN Transistor 2sc5242

Abstract: transistor 2sc5242 Audio Output Transistor Amplifier 2SC5242 2SC5242* datasheet 2SA1962
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5242 DESCRIPTION •High Collector Breakdown Voltage: V BR CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications

2SC5242

Abstract: 2SA1962 230V npn 1A
Contextual Info: SavantIC Semiconductor Product Specification 2SC5242 Silicon NPN Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity

2sa1962

Abstract: 2SC5242
Contextual Info: SavantIC Semiconductor Product Specification 2SA1962 Silicon PNP Power Transistors DESCRIPTION •With TO-3P I package ·Complement to type 2SC5242 ·High collector voltage: VCEO=-230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio

2SA1962

Abstract: 2SC5242 transistors audio pnp power
Contextual Info: JMnic Product Specification 2SA1962 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P I package ・Complement to type 2SC5242 ・High collector voltage: VCEO=-230V(Min) APPLICATIONS ・Power amplifier applications ・Recommend for 80W high fidelity audio

Toshiba transistor A1962

Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242
Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

transistor a1962

Abstract: Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA
Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

transistor a1962

Abstract: a1962 a1962 TOSHIBA Toshiba transistor A1962 2Sa1962 2SA1962 TOSHIBA TOSHIBA A1962 2SC5242
Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

Toshiba transistor A1962

Abstract: a1962 TOSHIBA A1962 TOSHIBA A1962 transistor a1962 2SA1962 TOSHIBA 360MAX
Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

j4313

Abstract: j4313-o c5242 2sc5200 amplifier circuit
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

j4313-o

Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.