2SC5232 Search Results

marking fa

Abstract: 2SC5232
Contextual Info: TOSHIBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5232 Unit in mm GENERAL PURPOSE AM PLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • + 0.5 Low Saturation Voltage : V ce (sat) (l) = 15mV(Typ.) @ Iq = 10mA / Ig = 0.5mA

Contextual Info: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)

2SC5232

Contextual Info: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)

Contextual Info: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application Unit: mm • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)

2SC5232

Contextual Info: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA · Large collector current: IC = 500 mA (max)

Contextual Info: TOSHIBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC 5232 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION Low Saturation Voltage Large Collector Current VCE (sat) (D = 15mV (Typ.) @ I q = 10mA / Iß = 0.5mA

Contextual Info: Reliability Tests Report Product Name: 2SC5232 Package Name: S-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s

2SC5232

Abstract: marking FA
Contextual Info: TO SH IBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5232 Unit in mm GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION + 0.5 2 .5 -0 .3 + 0.25 k 1-5 - ° - 15 >i IL o w S a t u r a t i o n V o lt a g e

toshiba h05

Contextual Info: TOSHIBA 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5232 GENERAL PURPOSE AMPLIFIER APPLICATIONS Unit in mm SWITCHING AND MUTING SWITCH APPLICATION h0.5 • Low Saturation Voltage : V^ e (sat) (l) = 15mV(Typ.) @ Iq = 10mA / Ig = 0.5mA

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5232 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 @IC = 10 mA/IB = 0.5 mA 1 0.55 Low saturation voltage: VCE sat (1) = 15 mV (typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 Large collector current: IC = 500 mA (max).

Contextual Info: T O SH IB A TENTATIVE 2SC5232 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SC 5 2 3 2 GENERAL PURPOSE AMPLIFIER APPLICATIONS SWITCHING AND MUTING SWITCH APPLICATION • Low Saturation Voltage • Large Collector Current Unit in mm + 0.5 1.5 - 0 . 3

2SC5232

Contextual Info: 2SC5232 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5232 ○ 低周波増幅用 ○ ミューティング用 ○ スイッチング用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) (1) = 15 mV (標準)

Contextual Info: 2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5232 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)

2SC5232

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC5232 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 @IC = 10 mA/IB = 0.5 mA 1 Large collector current: IC = 500 mA max . 0.55 Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S