Untitled
Abstract: No abstract text available
Text: 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol
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2SC5094
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 -0 .3 • Low Noise Figure, High Gain. • N F = 1.8dB, |S21el2= 7.5dB f=2GHz + 0.25 .1 .5 -0 .1 5 .
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2SC5094
S21el2=
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2SC5094
Abstract: No abstract text available
Text: 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. · NF = 1.8dB, |S21e|2 = 7.5dB f = 2 GHz Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating
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2SC5094
SC-59
2SC5094
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NF NPN Silicon Power transistor TO-3
Abstract: No abstract text available
Text: T O SH IB A 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF=1.8dB, |S2lel2 = 7.5dB f=2GHz +0.5 2.5-0.3 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5094
SC-59
NF NPN Silicon Power transistor TO-3
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NPN 1147
Abstract: No abstract text available
Text: 2SC5094 SILICQN NPN EPITAXIAL pi-ANAR t y p e t r a n s is t o r U n it in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A TIO N S. • Low N oise Figure, H igh Gain. N F = 1.8dB, |S 2ieP = 7-5dB f=2G IIz M A X IM U M R ATINGS (Ta = 25°C)
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2SC5094
SC-59
NPN 1147
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Untitled
Abstract: No abstract text available
Text: 2SC5094 NPN 10 GHz RF Wideband Transistor COLLECTOR 3 3 P b Lead Pb -Free 2 2 BASE 1 FEATURES High power gain Low noise figure High DC current gain SC-59 package 1 EMITTER SC-59 Applieation: VHF~UHF Band Low Noise Amplifier Applications. MAXIMUM RATINGS (Ta=25 ºC)
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2SC5094
SC-59
SC-59
2SC5094
08-Feb-07
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2SC5094
Abstract: No abstract text available
Text: TO SH IBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 2 .5 - 0 .3 • Low Noise Figure, High Gain. • N F=1.8dB, |S2lel2= 7.5dB f=2GHz + 0.25 k1-5-°-15>i MAXIMUM RATINGS (Ta = 25°C)
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2SC5094
SC-59
2SC5094
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2SC5094
Abstract: Low Noise uhf transistor
Text: 2SC5094 NPN 10 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 3 1 1 BASE FEATURES High power gain Low noise figure High DC current gain SC-59 package 2 2 SC-59 EMITTER Applieation: VHF~UHF Band Low Noise Amplifier Applications. MAXIMUM RATINGS (Ta=25 ºC)
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2SC5094
SC-59
SC-59
2SC5094
08-Feb-07
Low Noise uhf transistor
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2SC5094
Abstract: sc 7113 Pc 614
Text: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 • Low Noise Figure, High Gain. • NF=1.8dB, |S2lel2= 7.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC5094
SC-59
2SC5094
sc 7113
Pc 614
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Untitled
Abstract: No abstract text available
Text: 2SC5094 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5094 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.8dB typ. , |S21e|2 = 7.0dB (typ.) (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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2SC5094
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2SC5094
Abstract: 6514 TRANSISTOR
Text: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5094 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • NF = 1.8dB, |S2lel2= 7.5dB f = 2GHz Unit in mm 2.5 4 0.5 0.3 • * - MAXIMUM RATINGS (Ta = 25°C)
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2SC5094
SC-59
2SC5094
6514 TRANSISTOR
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sh 2089
Abstract: No abstract text available
Text: TOSHIBA 2SC5094 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5Q94 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • U nit in mm Low Noise Figure, High Gain. - 4- 0.5 2 . 5 - 0.3 N F—1.8dB, |S2le|2—7.5dB f—2GHz +0.25 1. 5 - 0.15 h MAXIMUM RATINGS (Ta = 25°C)
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2SC5094
2SC5Q94
JEDE86
sh 2089
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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SCJ0004N
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5094
2SC5106
RFM70U12D
2SC3136
rfm03u3ct
2SK709
RFM70U12
MT3S106
MT3S111
MT3S111P
tim4450
tpm1919
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JDV2S31CT
Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。
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BCJ0003F
BCJ0003E
JDV2S31CT
1SV283B
1SV271
2SK1875
2sk3476
1SV128
1SV307
1SV308
DCS1800
IMT-2000
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sec 2sc5088
Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and
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BCE0003D
S-167
BCE0003E
sec 2sc5088
samsung UHF/VHF TV Tuner
2SC5066 datasheet
RF Bipolar Transistor
transistor 2SC5066
2SC5088 SEC
MT6L04AE
MT4S200T
AU82
MT6L63FS
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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MT3S111P
Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287
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2SC941TM
2SC3136
TIM7179-45SL
TIM7179-60SL
TIM7785-4SL
TIM7785-4UL
TIM7785-6UL
TIM7785-8SL
TIM7785-8UL
TIM7785-12UL
MT3S111P
2SC3136
2SC4250FV
TIM0910-8
TA4029CTC
tim8996-30
TA4029
TMD1925-3
2SC5066
3SK293
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SV153A
Abstract: Sv153 varicap diode 2SC491 1SV226 Am tuning varicap 1SS242 1SV211 4007F S1B66
Text: 3. BLOCK DIAGRAM OF RECOMMENDED PRODUCTS 3.1 RF DISCRETE DEVICES FOR AM TUNER Bi'Transistor PIN Diode Single TO-92 SM 1 SV 9 9 Double use SM Q SM TO-92 USM 1SV128 1SV271 1SV172 1S V 2 3 7 1SV252 MINI SM 2 SC 3 8 0 T M 2 SC 26 6 9 2SC2715 2 SC 94 1 T M 2SC2670
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2SC2670
2SC2715
2SC2716
1SV128
1SV271
1SV172
1SV252
1SV102
SV149
2V02H
SV153A
Sv153
varicap diode
2SC491
1SV226
Am tuning varicap
1SS242
1SV211
4007F
S1B66
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2sc5066
Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs
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SCE0004I
2SC380TM
2sc5066
MT3S111P
MT3S111
toshiba transistors catalog
TIM4450-4UL
TGI1314-50L
MT3S106
MT4S200T
X-band low noise amplifiers toshiba
2SC3136
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3sk fet
Abstract: transistor 2sk 4007F 2sk711 2SC388A S3275 2sk241 3SK257 transistor 2sk 161 2SK type
Text: 2. C H A R A C T E R IST IC S C H A R T 2.1 TRANSISTORS FOR TV TUNER MAX V e to APPLICATION E L E C T R IC A L C H A R A C T E R IS T IC S R A T IN G S le M T Y P . Pc Vce V CE V ) |m A | |mW) (V ) 2SC 362TM 40 50 2 5 0 30MIN 2SC 383TM 45 50 300 2SC388ATM
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362TM
383TM
2SC388ATM
400MIN
2SC4317
2SC4322
3sk fet
transistor 2sk
4007F
2sk711
2SC388A
S3275
2sk241
3SK257
transistor 2sk 161
2SK type
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k192a
Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188
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1SS154
1SS239
1SS241
1SS242
1SS268
1SS269
1SS271
1SS295
1SS312
1SS313
k192a
c2458
C2498
C2668
C2717
C1923 Y
C2499
k710
K241
C2995
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3120 tuner
Abstract: C5086 1SS242 1SV226 1SV204 2sc low noise C1923 1SS241 mos cascode 2SA1161
Text: [I] PRODUCT OUTLINE & EXPLANATION 1. SELECTION GUIDE PACKAGE TYPES & APPLICATION 1.1 TRANSISTORS FOR TV TUNER Package Style TO -92 A PPLICATIO N ♦ Super-Mini Super-Mini Quad (SO T-23 M O D ./ (S O T -143 M O D .) T O -23 6 M O D . ) * * % % " • UHF M IX
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3SK240
3SK283
3SK127
3SK146
3SK199
3SK207
3SK232
2SC3828
2SC4214
3SK284
3120 tuner
C5086
1SS242
1SV226
1SV204
2sc low noise
C1923
1SS241
mos cascode
2SA1161
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FET K161
Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or
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3SK114
3SK126
S1255
2SC2644
S-AV24
3SK115
3SK291
S1256
S-AV26H
FET K161
S-AV24
k192a
Transistor C1923
C1923 transistor
k161 jfet
fet k241
k161 mosfet
C1923 transistor base
c2498 TRANSISTOR
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