2A marking
Abstract: 2SC5026 Silicon NPN Epitaxial Planar Type smd transistor MARKING 2A npn
Text: Transistors SMD Type Silicon NPN Epitaxial Planar Type 2SC5026 Features Low collector-emitter saturation voltage VCE sat . High collector-emitter voltage (Base open) VCEO Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the
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2SC5026
2A marking
2SC5026
Silicon NPN Epitaxial Planar Type
smd transistor MARKING 2A npn
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2SC5022
Abstract: TO220FM Hitachi DSA00108
Text: 2SC5022 Silicon NPN Triple difused Application TO–220FM High voltage amplifier Features • High brakedown voltage V BR CEO = 1500 V Min 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ———————————————————————————————————————————
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2SC5022
220FM
2SC5022
TO220FM
Hitachi DSA00108
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)
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2SC5029
2SA1892
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Untitled
Abstract: No abstract text available
Text: 2SC5024 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 300 MHz typ • High breakdown voltage and low output capacitance V CE0 = 200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier
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2SC5024
2SA1889
2SC5024B
2SC5024C
2SC4704.
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SC5026G • Package ■ Features • Code MiniP3-F2
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2002/95/EC)
2SA1890G
2SC5026G
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Hitachi DSA00164
Abstract: No abstract text available
Text: 2SC5025 Silicon NPN Epitaxial Application High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 2SC5025 Absolute Maximum Ratings Ta = 25°C
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2SC5025
O-126FM
D-85622
Hitachi DSA00164
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Untitled
Abstract: No abstract text available
Text: 2SC5023 Silicon NPN Epitaxial HITACHI Application High frequency amplifier Features • Excellent high frequency characteristics fT= 1000 MHz typ • High breakdown voltage and low output capacitance VCEO= 100 V. Cob = 4.5 pF typ • Suitable for wide band video amplifier
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2SC5023
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C5028
Abstract: 2SC5028 equivalent transistor c5028 2SA1891
Text: 2SC5028 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5028 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max) • High collector power dissipation: PC = 1.3 W
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2SC5028
2SA1891
C5028
2SC5028
equivalent transistor c5028
2SA1891
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2SC3652
Abstract: 2SC5025
Text: 2SC5025 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ 1 2 3 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Ta = 25°C
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2SC5025
126FM
2SC3652.
2SC3652
2SC5025
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2SA1890
Abstract: 2SC5026
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SA1890
2SC5026
2SA1890
2SC5026
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC5026G Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1890G • Package ■ Features • Low collector-emitter saturation voltage VCE(sat)
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2002/95/EC)
2SC5026G
2SA1890G
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2SC5028
Abstract: 2SA1891
Text: TOSHIBA 2SC5028 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 Unit in mm POWER SWITCHING APPLICATIONS • • Low Collector Saturation Voltage : VCE (sat)~ —0.5V (Max.) High Collector Power Dissipation : P(} = 1.3W (Ta = 25°C)
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2SC5028
500ns
2SA1891
2SC5028
2SA1891
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2SA1891
Abstract: 2SC5028
Text: TO SH IBA 2SC5028 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5028 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage : VCE (sat)~ —0.5y (Max.) High Collector Power Dissipation : P 0 = 1.3W (Ta = 25°C)
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2SC5028
500ns
2SA1891
2SA1891
2SC5028
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2SC5027E
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES 1 * High Speed Switching * Wide SOA TO-220 1 TO-220F *Pb-free plating product number: 2SC5027EL ORDERING INFORMATION Order Number Normal
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2SC5027E
O-220
O-220F
2SC5027EL
2SC5027E-x-TA3-T
2SC5027EL-x-TA3-T
2SC5027E-x-TF3-T
2SC5027EL-x-TF3-T
2SC5027E
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Lead Free 2SC5027EL-x-TA3-T 2SC5027EL-x-TF3-T 2SC5027EL-x-TF1-T
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2SC5027E
2SC5027EL-x-TA3-T
2SC5027EL-x-TF3-T
2SC5027EL-x-TF1-T
2SC5027EL-x-TF2-T
O-220
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2SA1890
Abstract: 2SC5026 2sa189
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 3 2 0.5±0.08 1.5±0.1 Collector-base voltage (Emitter open)
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2002/95/EC)
2SA1890
2SC5026
2SA1890
2SC5026
2sa189
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1 0.4±0.08 3 2 0.5±0.08 1.5±0.1 2.5±0.1 1.0+0.1 –0.2
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2002/95/EC)
2SA1890
2SC5026
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C5027 transistor
Abstract: C5027
Text: 2SC5027 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC5027 High-Voltage Switching and Amplifier Applications Color TV Horizontal Driver Applications Unit: mm Color TV Chroma Output Applications • High breakdown voltage: VCEO = 300 V
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2SC5027
C5027 transistor
C5027
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2SC5027EL-X-TA3-T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC5027E NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR . FEATURES * High Speed Switching * Wide SOA ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC5027EL-x-TA3-T 2SC5027EL-x-TA3-T 2SC5027EL-x-TF2-T
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2SC5027E
2SC5027EL-x-TA3-T
2SC5027EL-x-TF2-T
2SC5027EL-x-TF3-T
O-220
O-220F2
O-220F
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C5028
Abstract: 2SC5028 2SA1891
Text: 2SC5028 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC5028 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = 0.5 V (最大) (IC = 1 A) •
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2SC5028
2SA1891
20070701-JA
C5028
2SC5028
2SA1891
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2SC5027 F
Abstract: No abstract text available
Text: UTC 2SC5027 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH RELIABILITY FEATURES * High Speed Switching * Wide SOA 1 TO-220 1.Base ABSOLUTE MAXIMUM RATINGS Tc=25℃ PARAMETER 2.Collector 3.Emitter SYMBOL RATINGS UNIT VCBO VCEO VEBO Ic Icp IB Pc TJ TSTG
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2SC5027
O-220
QW-R203-027
2SC5027 F
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Hitachi DSA002714
Abstract: No abstract text available
Text: 2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V BR CEO = 1500 V Min Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage
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2SC5022
O-220FM
D-85622
Hitachi DSA002714
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2SC4708
Abstract: 2SC5023 2SC5023B 2SC5023C
Text: 2SC5023 Silicon NPN Epitaxial Application TO–126FM High frequency amplifier Features • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ • Suitable for wide band video amplifier
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2SC5023
126FM
2SC4708.
2SC4708
2SC5023
2SC5023B
2SC5023C
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2SA1890
Abstract: 2SC5026
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1890 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 3 2 0.5±0.08 1.5±0.1 Unit Collector-base voltage (Emitter open)
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2002/95/EC)
2SA1890
2SC5026
2SA1890
2SC5026
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