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    Panasonic Electronic Components 2SC4808J0L

    RF TRANS NPN 10V 6GHZ SSMINI3-F1
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    Panasonic Electronic Components 2SC48050QL

    RF TRANS NPN 10V 8.5GHZ SMINI3G1
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    Panasonic Electronic Components 2SC4808G0L

    RF TRANS NPN 10V 6GHZ SSMINI3-F3
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    2SC480 Datasheets (84)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC480 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC480 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC480 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC480 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC480 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC480 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC480 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4800 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SC4800 Hitachi Semiconductor Power Switching Transistors Scan PDF
    2SC4800 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4800 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4800 Unknown (2SC4800 - 2SC4803) Power Bipolar Transistors Scan PDF
    2SC4800 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4800 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4801 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SC4801 Hitachi Semiconductor Power Switching Transistors Scan PDF
    2SC4801 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC4801 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4801 Unknown (2SC4800 - 2SC4803) Power Bipolar Transistors Scan PDF
    2SC4801 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SC480 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC4806

    Abstract: No abstract text available
    Text: 2SC4806 SILICON NPN TRIPLE DIFFUSED MESA TYPE H O R IZO N T AL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. U n it in mm HIGH SPEED SW ITCH IN G PO W ER SUPPLY OUTPUT APPLICATIONS. 1 5 .5 1 0 .5 High Voltage : VcBO = l?OOV Max. High Speed : tf=0.15/js (Typ.)


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    2SC4806 15/js 2SC4806 PDF

    2SC4804

    Abstract: ITO-220
    Text: Inchange Semiconductor Product Specification 2SC4804 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・High breakdown voltage APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications


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    2SC4804 ITO-220 ITO-220) 2SC4804 PDF

    4946

    Abstract: me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336
    Text: - m % a « T y p e No. Manuf. = æ SANYO 2SC 4930 2SC 4931 z 2SC 4932 S 2SC 4933 2SC 4934 ^ 2SC 4935 3L 23C 4336 — 2SC 4940 — f 2 :v- NEC ÏZ. HITACHI s ± il FUJITSU ta t M ATSUS H I T A 2SC4838 ZdLOUUO 2SC4808 2SC4805 2SD2228 2SD1820 2SC3440 2SC4211


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    2SC4S39 2SC4808 2SC4931 2SC5007 2SC4805 2SC4555 2SC4118 2SD2228 2SD1820 2SC3440 4946 me 4946 4947 2SC5020 an 4953 4953 2SC3124 2SC3310 2SC4639 4336 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit : mm 0.80±0.05 For high-frequency amplification/oscillation/mixing 0.12+0.03 –0.01 0 to 0.02


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    2002/95/EC) 2SC4809J PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC4808 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open)


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    2SC4808 S21e2 PDF

    hitachi ha 1374

    Abstract: No abstract text available
    Text: 2SC4807 Silicon N PN Epitaxial HITACHI Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pep = 24 dBm Typ at V CF = 5V , Ic = 100 mA , f = 900 MHz Outline


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    2SC4807 hitachi ha 1374 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4808G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For UHF band low-noise amplification • Package • Low noise figure NF • High forward transfer gain S21e2


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    2002/95/EC) 2SC4808G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 1.25±0.10


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    2002/95/EC) 2SC4805 PDF

    D2375

    Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
    Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A


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    125mW 2SC4627 2SC5021 2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 D2375 D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526 PDF

    2SC4808J

    Abstract: SC-89
    Text: Transistors 2SC4808J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open) VCEO 10 V Emitter-base voltage (Collector open) VEBO 2 V Collector current


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    2SC4808J 2SC4808J SC-89 PDF

    2SC4809J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit : mm 0.80±0.05 For high-frequency amplification/oscillation/mixing 0.12+0.03 –0.01 0 to 0.02


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    2002/95/EC) 2SC4809J SC-89 2SC4809J SC-89 PDF

    1122a

    Abstract: 2SC4807 DSA003637
    Text: 2SC4807 Silicon NPN Epitaxial ADE-208-1122A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , I C = 100 mA , f = 900 MHz


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    2SC4807 ADE-208-1122A 1122a 2SC4807 DSA003637 PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 2SC4807-Silicon NPN Bipolar Transistor Application UPAK VHF & UHF wide band amplifier Features 1 • High gain bandwidth product f-j- = 4.4 GHz typ • High output power 1 dB Power compression point, Pep = 24 dBm typ at VCE = 5V , I c = 100 mA , f = 900 MHz


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    2SC4807-----Silicon PDF

    2SC4809J

    Abstract: SC-89
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 Unit : mm 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 For high-frequency amplification/oscillation/mixing


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    2002/95/EC) 2SC4809J 2SC4809J SC-89 PDF

    2SC4809G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common emitter) Crb


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    2002/95/EC) 2SC4809G 2SC4809G PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4808G Silicon NPN epitaxial planar type For UHF band low-noise amplification • Package • Low noise figure NF • High forward transfer gain S21e2 • High transition frequency fT


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    2002/95/EC) 2SC4808G S21e2 PDF

    2SC4809

    Abstract: SC-75
    Text: Transistors 2SC4809 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C 0.4 2 (0.3) 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 Unit Collector-base voltage (Emitter open)


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    2SC4809 2SC4809 SC-75 PDF

    2SC4809

    Abstract: matsushita Transistor hFE CLASSIFICATION Marking
    Text: Transistor 2SC4809 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing Unit: mm 0.2+0.1 –0.05 • Features 1˚ 2 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage


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    2SC4809 2SC4809 matsushita Transistor hFE CLASSIFICATION Marking PDF

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A PDF

    2SC4807

    Abstract: 2SC4807ERTR-E
    Text: 2SC4807 Silicon NPN Epitaxial REJ03G0731-0300 Previous ADE-208-1122A Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 4.4 GHz Typ • High output power 1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz


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    2SC4807 REJ03G0731-0300 ADE-208-1122A) PLZZ0004CA-A 2SC4807 2SC4807ERTR-E PDF

    2SC4809

    Abstract: SC-75
    Text: Transistors 2SC4809 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.2+0.1 –0.05 • Features 0.15+0.1 –0.05 3 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open)


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    2SC4809 2SC4809 SC-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4808G Silicon NPN epitaxial planar type For UHF band low-noise amplification • Features ■ Package • Low noise figure NF • High forward transfer gain S21e2 • High transition frequency fT


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    2002/95/EC) 2SC4808G S21e2 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4805 Silicon NPN epitaxial planar type For 2 GHz band low-noise amplification (0.425) Unit: mm 0.3+0.1 –0.0 • Features 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5˚ 1.25±0.10


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    2002/95/EC) 2SC4805 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4809G Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing • Features ■ Package • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common emitter) Crb


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    2002/95/EC) 2SC4809G PDF