2SC4626 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4626J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 (0.50)(0.50) ■ Absolute Maximum Ratings Ta = 25°C

2SC4626J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4626J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03

2SC4626J

Abstract: SC-89
Contextual Info: Transistors 2SC4626J Silicon NPN epitaxial planar type For high-frequency amplification 1.00±0.05 • Features 0.80±0.05 Unit: mm 1.60+0.05 –0.03 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) Rating Unit Collector to base voltage VCBO 30 V Collector to emitter voltage

2SA1790J

Abstract: 2SC4626J SC-89
Contextual Info: Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) 5˚ Parameter Symbol Rating Unit VCBO −30 V Collector-emitter voltage (Base open)

2SA1790

Abstract: 2SC4626 SC-75
Contextual Info: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 1˚ • Features Symbol Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SA1790 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC4626 Unit: mm 1.6±0.15 0.8±0.1 0.4 +0.1 0.5 1 3 0.5 1.6±0.1 ● High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment

Contextual Info: Transistors 2SC4626 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 3 Rating Unit VCBO 30 V Collector-emitter voltage Base open VCEO 20 V Emitter-base voltage (Collector open)

2SC4626J

Abstract: SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4626J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03

Contextual Info: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.2+0.1 –0.05 Rating Unit Collector-base voltage Emitter open VCBO −30 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4626J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03

2SC4626J

Abstract: SC-89
Contextual Info: Transistors 2SC4626J Silicon NPN epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 • Features Unit: mm 0.80±0.05 For high-frequency amplification 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4626G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA1790

Abstract: 2SC4626 SC-75
Contextual Info: Transistors 2SA1790 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC4626 Unit: mm 0.2+0.1 –0.05 0.15+0.1 –0.05 1˚ 3 • Absolute Maximum Ratings Ta = 25°C 2 0.3 1 (0.5) (0.5) 1.0±0.1 1.6±0.1 (0.4) • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4626G • Package • Optimum for RF amplification of FM/AM radios

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4626G Silicon NPN epitaxial planar type For high-frequency amplification • Features ■ Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SC4614

Abstract: 2SC4636 2SC4642 2SC4626 2SC4627 2SC4628 2SC4629 2SC4630 2SC4631 2SC4632
Contextual Info: - 210 - *0 31 2SC4626 2SC4627 2SC4628 2SC4629 M M Ta=25'C, *E¡]/ÍTc=25cC ^ EB tt S n~l & Vc b o Vc e o (V) (V) Crne) T (A) Pc Pc* IcBO (W) (W) (juA) 0.03 0.125 30 20 20 0.015 0.125 20 20 0. 02 15 9 föT HF A 30 Hi Hi HF A HF A UHFAHF A (max) (rain) Vc b

2SA1790G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4626G • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type

2SA1790G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification Complementary to 2SC4626G • Features ue pl d in an c se ed lud pl vi

2SC4626G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4626G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high-frequency amplification • Package • Optimum for RF amplification of FM/AM radios • High transition frequency fT

2SA179

Abstract: 2SA1790J 2SC4626J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type

2SA1790

Abstract: 2SC4626
Contextual Info: Transistor 2SC4626 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA1790 Unit: mm 0.2+0.1 –0.05 0.75±0.15 5˚ Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage

2SA1790J

Abstract: 2SC4626J SC-89
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1790J For high-frequency amplification Complementary to 2SC4626J Unit: mm 1.60+0.05 –0.03 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 0.80±0.05 Silicon PNP epitaxial planar type