2SC4226
Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold
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2SC4226
2SC4226
S21e2
2SC4226-T1
2SC4226 APPLICATION NOTES
PU10450EJ01V0DS
R25 marking
2SC4226 datasheet
marking r25 NPN
2SC4226-T1
transistor s2p
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JLN 2003
Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
Text: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
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2SC4226
R09DS0022EJ0200
2SC4226
S21e2
2SC4226-A
2SC4226-T1
JLN 2003
2SC4226 APPLICATION NOTES
newmarket transistor
2SC4226-T1
2SC4226-T1-A
2SC4226-A
Korea Electronics TRANSISTOR
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2SC4226 APPLICATION NOTES
Abstract: 2SC4226 datasheet PU10450EJ01V0DS 2SC4226 2SC4226-T1
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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UPC8236
Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4
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R09CA0001EJ0100
PX10020EJ42V0PF
UPC8236
2SC5508
2SC3357/NE85634
CATV MODULATOR
NE5510279A
upg2406t6r
Microwave GaAs FET catalogue
NE3515S02
NE662M04
NE3514S02
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2SC5508
Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A
Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4
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R09CA0001EJ0300
2SC5508
UPC3243
UPC8236
NE3509
NE3517S03
transistor 20107
800 Mhz Cordless Phone circuit diagram
NESG270034
2SC4226 APPLICATION NOTES
NE5510279A
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2sc4226
Abstract: 2SC4226 APPLICATION NOTES
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA810T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The µPA810T has built-in 2 low-voltage transistors which are designed to PACKAGE DRAWINGS
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PA810T
2SC4226)
PA810T
PA810T-T1
2sc4226
2SC4226 APPLICATION NOTES
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634-111-2
Abstract: 2SC4226 2SC4226 APPLICATION NOTES UPA810T LEM 718
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TI 9023 IC data
Abstract: 2SC4226 APPLICATION NOTES
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS
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uPA810T
2SC4226)
/xPA81
TI 9023 IC data
2SC4226 APPLICATION NOTES
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sem 5025
Abstract: ic 4440 for audio amplification pe 5571 NEC 9736
Text: PRELIMINARY DATA SHEET S ilico n T ransistor juPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ¿iPA835TF has two different built-in transistors (Q1
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uPA835TF
iPA835TF
2SC4959,
2SC4226)
sem 5025
ic 4440 for audio amplification
pe 5571
NEC 9736
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D5611 A/B
Abstract: ic 4440 for audio amplification d5611 pe 5571 NEC D73 d5023 TRANSISTOR PPA821TF d5972 2SC4226 D1276
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA821TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC4226 THIN-TYPE SMALL MINI MOLD The PPA821TF has 2 built-in low-voltage transistors which are PACKAGE DRAWINGS (Unit: mm)
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PPA821TF
2SC4226)
PPA821TF
PPA821TF-T1
D5611 A/B
ic 4440 for audio amplification
d5611
pe 5571
NEC D73
d5023 TRANSISTOR
d5972
2SC4226
D1276
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transistor 9527
Abstract: p12724 ic 5219 8mm 2SC4226 2SC4959 IC 4822 ic 8720
Text: PRELIMINARY DATA SHEET Silicon Transistor µPA832TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) The µPA832TF has two different built-in transistors (Q1 2.10±0.1 and Q2) for low noise amplification in the VHF band to UHF
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PA832TF
PA832TF
2SC4226
transistor 9527
p12724
ic 5219 8mm
2SC4226
2SC4959
IC 4822
ic 8720
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transistor sr 13009
Abstract: sr 13009 transistor d 13009 UPA831TF transistors W 5753 1997N apa831 ic 5219 8mm on 5297 transistor
Text: PRELIMINARY DATA SH EET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE DESCRIPTION PACKAGE DRAWINGS (Unit:mm) The ,uPA831TF has tw o different built-in transistors (Q1 and Q2) for tow noise am plification in the VHF band to UHF
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uPA831TF
2SC4226,
2SC4227)
2SC4226
2SC4227
transistor sr 13009
sr 13009
transistor d 13009
transistors W 5753
1997N
apa831
ic 5219 8mm
on 5297 transistor
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3692 nec
Abstract: 2SC4226 2SC4959
Text: PRELIMINARY DATA SHEET Silicon Transistor µPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) The µPA835TF has two different built-in transistors (Q1 2.10±0.1 and Q2) for low noise amplification in the VHF band to UHF
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PA835TF
PA835TF
2SC4959
3692 nec
2SC4226
2SC4959
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2SC4226
Abstract: 2SC4227 2988 3088 7856 marking ic 5219 8mm TRANSISTOR 4847
Text: PRELIMINARY DATA SHEET Silicon Transistor µPA831TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) The µPA831TF has two different built-in transistors (Q1 2.10±0.1 and Q2) for low noise amplification in the VHF band to UHF
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PA831TF
PA831TF
2SC4226
2SC4227
2SC4226
2SC4227
2988 3088
7856 marking
ic 5219 8mm
TRANSISTOR 4847
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marking R24
Abstract: 2sc4226 nec 2741 MARKING 702 6pin ic
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)
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PA801T
PA801T
marking R24
2sc4226
nec 2741
MARKING 702 6pin ic
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d5611
Abstract: NEC d7001 d5611 pin d16803 D1347 d5023 TRANSISTOR D5022 D9328 D1275 D1450
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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ic 4440 for audio amplification
Abstract: 2SC4226 2SC4959 NEC 9736 ic 4075 NT 2955 ON transistor
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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uc 8343
Abstract: transistor d 13009 NT 2955 ON transistor 2SC4226 2SC4959 IC 4069 pin ic 4069 pin configuration transistor 13009
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec 14312 transistor
Abstract: UPA831TF 2SC4226 2SC4227 7912UC
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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transistor d 13009
Abstract: UPA831TF 2SC4226 2SC4227 ic 7442 details 251 pr 7542
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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ic 565 application
Abstract: 2SC4226
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
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P10100EJ6V0SG00
2SK2396A
NEC 2SK2396A
k2396a
pc1658
2SC2407
P10100EJ6V0SG00
UAA 1006
k2396
K2597
Marking Code SAW MOS transistor
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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PU10015EJ04V0PF
transistor marking T79 ghz
marking code C1H mmic
marking code C3E SOT-89
upb1507
marking code C1G mmic
marking code C1E mmic
data book transistors 2SA
uPC2712
pc3215
transistor 2SA data book
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