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Toshiba America Electronic Components 2SC3669-Y(T2OMI,FM TRANS NPN 80V 2A MSTM
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Toshiba America Electronic Components 2SC3669-Y,T2PASF(M TRANS NPN 80V 2A MSTM
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Toshiba America Electronic Components 2SC3669-Y,T2F(J
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Quest Components	2SC3669-Y,T2F(J		224			1 $1.76 10 $1.76 100 $0.88 1000 $0.88 10000 $0.88	Buy Now

2SC3669 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC3669	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3669	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3669	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC3669	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC3669	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3669	Toshiba	Silicon NPN Transistor	Scan	PDF
2SC3669	Toshiba	Silicon NPN transistor for power amplifier and power switching applications	Scan	PDF
2SC3669	Toshiba	Power Amp Apps	Scan	PDF
2SC3669	Toshiba	TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)	Scan	PDF
2SC3669-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3669O	Toshiba	Silicon Epitaxial NPN Transistor	Scan	PDF
2SC3669(-O..-Y)	Toshiba	Power Amp Apps	Scan	PDF
2SC3669-Y	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3669Y	Toshiba	Silicon Epitaxial NPN Transistor	Scan	PDF

2SC3669-Y,T2PASF(M	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 80V SC71	Original	PDF
2SC3669-Y(T2OMI,FM	Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 80V SC71	Original	PDF

2SC3669 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low saturation voltage VCE sat = 0.5V(Max) High speed switching time: tstg=1.0 S(Typ.) 1 TO-252 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)	Original	PDF	2SC3669 O-252 QW-R209-015
common collector applications Abstract: 2SC3669 Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low saturation voltage VCE sat = 0.5V(Max) High speed switching time: tstg=1.0 S(Typ.) 1 TO-252 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)	Original	PDF	2SC3669 O-252 QW-R209-015 common collector applications 2SC3669
C3669 Abstract: 2SC3669 2-7D101A 2SA1429 Text: 2SC3669 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3669 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)	Original	PDF	2SC3669 2SA1429 2-7D101A 20070701-JA C3669 2SC3669 2-7D101A 2SA1429
Untitled Abstract: No abstract text available Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low saturation voltage VCE sat = 0.5V(Max) High speed switching time: tstg=1.0 S(Typ.) 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)	Original	PDF	2SC3669 O-251 QW-R213-006
c3669 Abstract: 2SC3669 2-7D101A 2SA1429 Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)	Original	PDF	2SC3669 2SA1429 c3669 2SC3669 2-7D101A 2SA1429
2SC3669 Abstract: No abstract text available Text: UTC 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES Low saturation voltage VCE sat = 0.5V(Max) High speed switching time: tstg=1.0 S(Typ.) 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)	Original	PDF	2SC3669 O-251 QW-R213-006 2SC3669
C3669 Abstract: 2SC3669 2-7D101A 2SA1429 Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)	Original	PDF	2SC3669 2SA1429 C3669 2SC3669 2-7D101A 2SA1429
C3669 Abstract: 2-7D101A 2SA1429 2SC3669 Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.)	Original	PDF	2SC3669 2SA1429 C3669 2-7D101A 2SA1429 2SC3669
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage VCE SAT =0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.)  ORDERING INFORMATION	Original	PDF	2SC3669 OT-223 2SC3669G-x-AA3-R OT-89 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T O-251 2SC3669L-x-TN3-R 2SC3669G-x-TN3-R
C3669 Abstract: 2SC3669 2-7D101A 2SA1429 Text: 2SC3669 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3669 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = 0.5 V (最大) (IC = 1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)	Original	PDF	2SC3669 2SA1429 2-7D101A C3669 2SC3669 2-7D101A 2SA1429
2sc3669 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2SC3669 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage VCE SAT =0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) ORDERING INFORMATION	Original	PDF	2SC3669 OT-223 2SC3669L-x-AA3-R 2SC3669G-x-AA3-R OT-89 2SC3669L-x-AB3-R 2SC3669G-x-AB3-R 2SC3669L-x-TM3-T 2SC3669G-x-TM3-T O-251 2sc3669
C3669 Abstract: 2-7D101A Text: 2SC3669 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3669 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.)	Original	PDF	2SC3669 2SA1429 2-7D101A C3669 2-7D101A
A1429 Abstract: 2-7D101A 2SA1429 2SC3669 Text: 2SA1429 東芝トランジスタシリコンPNPエピタキシャル形 PCT方式 2SA1429 ○ 電力増幅用 ○ 電力スイッチング用単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)	Original	PDF	2SA1429 2SC3669 2-7D101A 20070701-JA A1429 2-7D101A 2SA1429 2SC3669
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

A1429 Abstract: No abstract text available Text: 2SA1429 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1429 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)	Original	PDF	2SA1429 2SC3669. 2-7D101A A1429
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	PDF	SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Untitled Abstract: No abstract text available Text: T O S H IB A 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V q e (sat) = 0-5V(Max.) High Speed Switching Time : tstg = 1.0,«s (Typ.)	OCR Scan	PDF	2SC3669 2SA1429
2SC3669 Abstract: 2-7D101A 2SA1429 Text: TO SH IBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)	OCR Scan	PDF	2SC3669 2SA1429 2-7D101A 20truments, 2SC3669 2-7D101A 2SA1429
Untitled Abstract: No abstract text available Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATION. • Low Saturation Voltage : VCE(sat)=0.5V (Max.) (IC=1A) • High Speed Switching Time: tstg= 1 '0us (Typ.) • Complementary to 2SA1429	OCR Scan	PDF	2SC3669 2SA1429
2sc3669 Abstract: so805 Text: TOSHIBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V(^e (sat)~0.5V (Max.) • High Speed Switching Time : tstg= 1.0/^s (Typ.)	OCR Scan	PDF	2SC3669 2SA1429 2sc3669 so805
2SC3669 Abstract: 2SA1429 Text: TOSHIBA 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • • Low Saturation Voltage : Vce (sat) = 0-5V (Max.) High Speed Switching Time : tstg= 1.0/^s (Typ.) Complementary to 2SA1429	OCR Scan	PDF	2SC3669 2SA1429 961001EAA2 2SC3669 2SA1429
2-7D101A Abstract: 2SA1429 2SC3669 Text: T O S H IB A 2SC3669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • Low Saturation V oltage : V q e (sat) = 0.5V (Max.) • H igh Speed S w itch in g Tim e : t stg = 1.0/us (Typ.)	OCR Scan	PDF	2SC3669 2SA1429 2-7D101A 2-7D101A 2SA1429 2SC3669
3669 Abstract: 2SC3669 2-7D101A 2SA1429 Text: TO SH IBA 2SC3669 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3669 Unit in mm POWER SWITCHING APPLICATIONS 7.1 MAX • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)	OCR Scan	PDF	2SC3669 2SA1429 2-7D101A 3669 2SC3669 2-7D101A 2SA1429
Untitled Abstract: No abstract text available Text: TO SHIBA 2SA1429 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A)	OCR Scan	PDF	2SA1429 2SC3669. 2-7D101A

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2SC3669 Price and Stock

Toshiba America Electronic Components 2SC3669-Y(T2OMI,FM

Toshiba America Electronic Components 2SC3669-Y,T2PASF(M

Toshiba America Electronic Components 2SC3669-Y,T2F(J

2SC3669 Datasheets (16)

2SC3669 Datasheets Context Search

Untitled

common collector applications

C3669

Untitled

c3669

2SC3669

C3669

C3669

Untitled

C3669

2sc3669

C3669

A1429

sn76131

A1429

GT30F131

Untitled

2SC3669

Untitled

2sc3669

2SC3669

2-7D101A

3669

Untitled