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    2SC365 Price and Stock

    Rochester Electronics LLC 2SC3651-TD-E

    2SC3651 - NPN EPITAXIAL PLANAR S
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    DigiKey 2SC3651-TD-E Bulk 1,567
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    Rochester Electronics LLC 2SC3650-TD-E

    NPN EPITAXIAL PLANAR SILICON
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    Rochester Electronics LLC 2SC3650-TD-E-ON

    NPN EPITAXIAL PLANAR SILICON
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    Rochester Electronics LLC 2SC3651-OTE-TD-E

    BIP NPN 0.2A 100V
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    DigiKey 2SC3651-OTE-TD-E Bulk 1,902
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    Aptina Imaging 2SC3651-OTE-TD-E

    2SC3651-OTE-TD-E
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    Verical 2SC3651-OTE-TD-E 74,000 2,328
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    2SC3651-OTE-TD-E 27,000 2,328
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    2SC3651-OTE-TD-E 9,000 2,328
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    2SC365 Datasheets (91)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC365 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC3650 Kexin NPN Epitaxial Planar Silicon Transistor Original PDF
    2SC3650 Sanyo Semiconductor High-gain, low-frequency general-purpose amplifier Original PDF
    2SC3650 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3650 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3650 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3650 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3650 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3650 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF
    2SC3650 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SC3650 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SC3651 Kexin NPN Epitaxial Planar Silicon Transistors Original PDF
    2SC3651 Sanyo Semiconductor High-gain, low-frequency general-purpose amplifier Original PDF
    2SC3651 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3651 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3651 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC3651 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3651 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3651 Sanyo Semiconductor PCP Type Transistors, XP5 / XP6 Type Transistors Scan PDF
    2SC3651 Sanyo Semiconductor PCP (Power Chip Pack) Transistor Scan PDF

    2SC365 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking cf

    Abstract: MARKING CF smd marking CF VEBO-15V SMD BR 17 transistor smd cf 2SC3650
    Text: Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain hFE=800 to 3200 . Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity,


    Original     		PDF 2SC3650 500mA 500mA, smd transistor marking cf MARKING CF smd marking CF VEBO-15V SMD BR 17 transistor smd cf 2SC3650

    2SC3658

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC3658 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed ・Built-in damper diode APPLICATIONS ・For color TV horizontal deflection output applications PINNING see Fig.2


    Original     		PDF 2SC3658 2SC3658

    2SC3650

    Abstract: 2Sc3650 equivalent MARKING CF
    Text: 2SC3650 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low collector-emitter saturation voltage VCE sat High DC current gain Large current capacity LF amp, various drivers, muting circuit MAXIMUM RATINGS (TA=25 oC unless otherwise noted)


    Original     		PDF 2SC3650 OT-89 08-May-2007 2SC3650 2Sc3650 equivalent MARKING CF

    2SC3650

    Abstract: ITR05748 ITR05749 ITR05750 ITR05751
    Text: 2SC3650 Ordering number : EN1780B SANYO Semiconductors DATA SHEET 2SC3650 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications Applications • LF amplifiers, various drivers, muting circuit. Features • •


    Original     		PDF 2SC3650 EN1780B 2SC3650 ITR05748 ITR05749 ITR05750 ITR05751

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC3650 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 1.2 A ICM: Collector-base voltage


    Original     		PDF OT-89 2SC3650 OT-89 500mA 500mA,

    c3657

    Abstract: toshiba c3657
    Text: 2SC3657 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3657 Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs max • High breakdown voltage: VCEO = 800 V


    Original     		PDF 2SC3657 2-16C1A c3657 toshiba c3657

    2SC3652

    Abstract: Hitachi DSA00493
    Text: 2SC3652 Silicon NPN Epitaxial Application High frequency amplifier Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3.5 V Collector current


    Original     		PDF 2SC3652 2SC3652 Hitachi DSA00493

    2SC3650

    Abstract: ITR05748 ITR05749 ITR05750 ITR05751 ITR05752 ITR05753
    Text: Ordering number:ENN1780A NPN Epitaxial Planar Silicon Transistor 2SC3650 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • LF amplifiers, various drivers, muting circuit. unit:mm 2038A Features [2SC3650] 4.5


    Original     		PDF ENN1780A 2SC3650 2SC3650] 25max 2SC3650 ITR05748 ITR05749 ITR05750 ITR05751 ITR05752 ITR05753

    Untitled

    Abstract: No abstract text available
    Text: 2SC3657 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3657 Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 1.0 µs max • High breakdown voltage: VCEO = 800 V


    Original     		PDF 2SC3657

    Untitled

    Abstract: No abstract text available
    Text: 2SC3658 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)1.5kâ V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC3658

    Untitled

    Abstract: No abstract text available
    Text: 2SC3659 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)1.7kâ V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC3659

    Untitled

    Abstract: No abstract text available
    Text: 2SC3656 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.


    Original     		PDF 2SC3656 Freq250MÃ resistor10k

    Untitled

    Abstract: No abstract text available
    Text: 2SC3653 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.50 h(FE) Max. Current gain.


    Original     		PDF 2SC3653 Freq250MÃ resistor47k

    2SC3650

    Abstract: No abstract text available
    Text: 2SC3650 1.2 A , 30 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package. Large Current Capacity. 4 High DC Current Gain Low VCE sat 1 2


    Original     		PDF 2SC3650 OT-89 02-Nov-2011 500mA 500mA, 2SC3650

    2SA1420

    Abstract: SC36 small signal transistor
    Text: Ordering number: EN 1682A 2SA1420/2SC3653 PNP/ NPN Epitaxial P lanar Silicon Transistors SAßtYO i Switching Applications _ with Bias Resistor Use .Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=47kfl ,R2=47kO ).


    OCR Scan     		PDF l682A 2SA1420/2SC3653 2SA1420 2034/2034A SC-43 7tlt17D7b SC36 small signal transistor

    2S114

    Abstract: 2SA1423 3AAP 2SC3656
    Text: Ordering number : EN 16 8 5 A 2SA1423/2SC3656 i PNP/NPN Epitaxial Planar Silicon Transistors SAKYO 080 Switching Appl ications with Bias Resistor finterface circuì/ Switching circuit, inverter circuit Features . With bias resistor (RlslOkU ,R2=10kfì ).


    OCR Scan     		PDF 2SA1423/2SC3656 2SA1423 2S114 2SA1423 3AAP 2SC3656

    2SA1420

    Abstract: SC36 2SA142
    Text: O rdering num ber: EN 1 6 8 2 A 2SA1420/2SC3653 i PN P /N P N Epitaxial P lanar Silicon T ransistors SAiYO Switching Applications _ with BiasResistor j Ose . S w itching c i r c u i t , i n v e r t e r c i r c u i t , i n t e r f a c e c i r F e a tu re s


    OCR Scan     		PDF 2SA1420/2SC3653 2SA1420 2SA1420 SC36 2SA142

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 1685A 2SA1423/2SC3656 i SAßiYO PNP/ NPN Epitaxial Planar SiliconTransistors i Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1 =10ki2 ,R2=10kfl ).


    OCR Scan     		PDF 2SA1423/2SC3656 10ki2 10kfl 2SA1423 Col----14 SC-51 rO-92 3C-43

    A125a

    Abstract: 2SC3658 2SC3659
    Text: 2SC3658,2SC36S9 • > u j > NPN = m a m w * SILICON NPN TRIPLE DIFFUSED_ S U f f , -K W ti f'fñ 1 1 .3 5 m a x . HIGH VOLTAGE, HIGH POWER SWITCHING 1 1 .6 ± 0 . 5 3.3max. T â .O ty p J 1. "< — X : B a s e 2. i ~ 3. 3 v 7 9 \ C o lle c to r 9 1 E m it t e r


    OCR Scan     		PDF 35max. 2SC3658 2SC3659 2SC3658 2SC3659 A125a

    Untitled

    Abstract: No abstract text available
    Text: H ITACHI 2SC3652 SILICON NPN EPITAXIAL HIGH FREQUENCY AMPLIFIER t . ü n i i it e r y Dimen'.Kww in mm I {JEDEC TO-126 MOD. MAXIMUM COLLECTOR DISSIPATION I ABSOLUTE MAXIMUM RATINGS (Ta-25*C> ¡ S v iiiU ii; Item U nit 2SCJ6S2 I V ( no 50 V C ollector to e m itter voltage


    OCR Scan     		PDF 2SC3652 O-126 Ta-25

    2SC366

    Abstract: 2SA1423 SC36
    Text: Ordering number: EN 1685A 2SA1423/2SC3656 i SAßiYO PNP/ NPN Epitaxial Planar SiliconTransistors i Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1 =10ki2 ,R2=10kfl ).


    OCR Scan     		PDF l685A 2SA1423/2SC3656 10kii 2SA1423 2034/2034A SC-43 7tlt17D7b 2SC366 SC36

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN 1780A NO.1780A 2SC3650 NPN Epitaxial Planar Silicon Transistor High hpE» Low-Frequency General-Purpose Amp Applications Applications . LF amp, various drivers, muting circuit Features . High DC current gain hpE=800 to 3200 . Low collector-to-emitter saturation voltage CvcE(sat)“0,'’V^


    OCR Scan     		PDF 250mm 2SC3650 500mA

    J3630

    Abstract: No abstract text available
    Text: O rdering num ber: EN 1 6 8 2 A 2SA1420/2SC3653 i PN P /N P N Epitaxial P lanar Silicon T ransistors SAiYO Switching Applications _ with BiasResistor j // Ose . Switching circuit, inverter circuit, interface cir Features . With bias resistor (R1^7kiì fB2s47kfì ).


    OCR Scan     		PDF 2SA1420/2SC3653 fB2s47kfì 2SA1420 SSC3653 J3630

    2SC3657

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3657 2SC3657 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS m HIGH SPEED DC-DC CONVERTER APPLICATIONS • • 53.2 ±0.2 15.9MAX. Excellent Switching Times : tr= 1.0/^s Max. , tf= 1.0/^s (Max.)


    OCR Scan     		PDF 2SC3657 2SC3657