2SC3328 TRANSISTOR Search Results

c3328

Abstract: C3328 NPN Transistor 2SC3328 2SA1315
Contextual Info: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •

C3328 NPN Transistor

Abstract: c3328 2SC3328
Contextual Info: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •

C3328 NPN Transistor

Abstract: c3328 2SC3328 2SA1315
Contextual Info: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •

C3328 NPN Transistor

Abstract: c3328 2SC3328 transistor 2Sa1315 2sc3328
Contextual Info: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •

2SC3328

Abstract: 3AAG 2SC332 2SA1315 2SC3328 transistor
Contextual Info: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage • VCE ( s a t ) “ 0.5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)

Contextual Info: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 PO W ER AM PLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage VCE = 0.5V (Max.) (IC = 1A) • High Speed Switching Time : tstg= 1.0/iS (Typ.)

2SC3328

Abstract: 2SA1315
Contextual Info: TO SH IBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • • • Low Saturation Voltage • VCE (sat) “ 0.5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)

2SC3328

Abstract: 2SA1315 2SC3328 transistor
Contextual Info: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 IN D USTRIA L APPLICATIONS PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : V C E ( s a t ) = 0 -5 V (M a x .) (IC = 1 A ) •

2SA1315

Abstract: 2SC3328
Contextual Info: TO SH IBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 POWER SWITCHING APPLICATIONS • • • Unit in mm 5.1 M A X. Low Saturation Voltage : V(TR (sat) —0-5V (Max.) (I£ = 1A) High Speed Switching Time : tgtg^l.O/^s (Typ.)

2SC3328 transistor

Contextual Info: T O SH IB A 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : V C E ( s a t ) = 0 , 5 V (Max,) (IC = 1 A ) • High Speed Switching Time : t^tg —1.0/*s (Typ.)

Contextual Info: 2SC3328 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)900m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

TO-3P

Abstract: 2SC3303 2sc3783 2sc3233 2sc2562 2sa1329 2sd717 2sc2655 2sb754
Contextual Info: Transistors Industrial use Regulator T ransistors F1 Appli­ cation £ 3 9 Max Rating (Tc=25"C) Type No. V obo{V) VCHO(V) 10(A) Appli­ cation Package Pc(W) TJCO Max Rating (Tc=25*C) Type No. V c b o (V) VCEO(V) Package lc(A) Pc(W) 2SC3075 0.8 10 Power Mold

2Sj72

Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Contextual Info: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *

2SA1315

Abstract: 2SC3328 A131 TT31
Contextual Info: 2SA1315 TOSHIBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (1^= -1A )

2SA1315

Abstract: 2SC3328 A131 C2804 TRANSISTOR 2sa1315
Contextual Info: 2SA1315 TO SH IBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : v CE(sat)= -0.5 V (Max.) (1^= -1A)

SA1315

Abstract: 2SA1315 2SC3328 A131
Contextual Info: TOSHIBA 2SA1315 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 315 IN D USTRIA L APPLICATIONS U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : v C E (sa t)= - 0 .5 V (Max.) ( I c = - 1 A )

Contextual Info: TOSHIBA 2SA1315 2 S A 1 315 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = -1 A )

2SA1315

Contextual Info: 2SA1315 TOSHIBA TOSHIBA TRANSISTOR K SILICON PNP EPITAXIAL TYPE PCT PROCESS mm Am m 1 3 1 5 • v ■ v INDUSTRIAL APPLICATIONS Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : V m ?r*^ = - 0.5V (Max. Win = - l A )

Transistor A1315

Abstract: A1315 transistor 2Sa1315 A1315 2SC3328
Contextual Info: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)

Transistor A1315

Abstract: A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328
Contextual Info: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)

Transistor A1315

Abstract: 2sa1315
Contextual Info: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)

Transistor A1315

Abstract: 2SA1315 A1315 transistor 2SC3328 A1315
Contextual Info: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.