2SC3311A Q Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC3311A TRANSISTOR NPN 1. EMITTER FEATURES z Optimum for High-density Mounting z Allowing Supply with the Radial Taping z Complementary to 2SA1309A 2. COLLECTOR

NV TRANSISTOR 2sc3311a

Abstract: 2SA1309A 2SC3311A
Contextual Info: Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max.

NV TRANSISTOR 2sc3311a

Abstract: 2SA1309A 2SC3311A 2SC3311A Q 2sc331
Contextual Info: Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SA1309A Unit: mm 3.0±0.2 4.0±0.2 • Features Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2sc331

Abstract: 2SA1309A 2SC3311A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features (0.8) ue pl d in an c se ed lud pl vi an m m es si

2SA1309A

Abstract: 2SC3311A
Contextual Info: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage

2SA1309A

Abstract: 2SC3311A
Contextual Info: Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 3.0±0.2 4.0±0.2 • Features marking Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max.

2SC3311A

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5

2SA1309A

Abstract: 2SC3311A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) Th an

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi

2SA1309A

Abstract: 2SC3311A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 (0.8) 3.0±0.2 2.0±0.2 (0.8) Th an W is k y

2SA1309A

Abstract: 2SC3311A
Contextual Info: Transistors 2SA1309A Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 15.6±0.5 (0.8) 0.75 max. • High forward current transfer ratio hFE • Allowing supply with the radial taping

2SA1309A

Abstract: 2SC3311A
Contextual Info: Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 7.6 0.8 3.0±0.2 2.0±0.2 (0.8) 0.75 max. 15.6±0.5 • Optimum for high-density mounting • Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3311A Silicon NPN epitaxial planar type For low-frequency amplification Complementary to 2SA1309A Unit: mm 4.0±0.2 • Features 15.6±0.5 d p lan inc ea se ed lud p lan m m es ht visi

2SC1815

Abstract: 2SC410 2sc1856 2sc1815 type 2sc2061 2SC387A 2SC1359 2SC2410 2SC454 2SC458
Contextual Info: - m * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * * € tt Manuf. Type No. V -2SC 178 2SC 179 B ÍL 2SC 180 B ÍL 2SC 181 0 ÍL 2SC 182 ^ b m 2SC 183 > b m 2SC 183A Q s 2SC 184 / a m 2SC 185 ¥ b m 2SC 186 ^ t t d r i l 2SC 187 Ä ± ii 2SC 191

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1309A TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z High Forward Current Transfer Ratio hFE. z Allowing Supply with the Radial Taping. z Optimum for High-density Mounting.

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

MCZ3001D

Abstract: MCZ3001 EZ0150AV1 dm-58 UF4005PKG23 dm-58 error amp MCZ3001D Datasheet MCZ3001D equivalent MA111-TX CN602
Contextual Info: KV-27FV300/29FV300/32FV300/36FV300 GK BOARD SCHEMATIC DIAGRAM | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | CN603 C600 * D647 D1NL20U-TA2 C607 1000p 250V 1 FB610 1.1UH FB611 1.1UH JW602 7.5MM C603 0.22 275V D628 MA111-TX 2 C633 0.001 3 R673 JW 7.5MM 4 R631

ON3105

Abstract: 2sd2603 mn4117405 2sc901b mn6520 MN1280 mn1225 MN6147C 2SC5573 GN2013
Contextual Info: Discontinued Types • Discontinued Types ● MOS LSIs Part No. Alternative Part No. MN1001 MN1020215 MN1020407 MN1020415 MN1020715 MN102LF53G MN1040 MN110 MN1101 MN115 MN115P MN116 MN116P MN1250 MN1250B MN1250BJC MN12510 MN1252 MN1252A MN1252B MN1252B1 MN1252B1S

2SC1047

Abstract: 2SC3311A UP04598
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04598 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 5˚ Display at No.1 lead 5˚ 0.10 max. • Basic Part Number 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)

2SC1047

Abstract: 2SC3311A UP04598
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04598 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d Parameter Collector-base voltage (Emitter open) Collector-emitter voltage

2SC3311A

Abstract: 2SC3354 UP04599
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04599 Silicon NPN epitaxial planar type 0.20+0.05 –0.02 (0.30) 4 5˚ Display at No.1 lead 5˚ 0.10 max. • Basic Part Number 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20)