2SC3130
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2
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2002/95/EC)
2SC3130
2SC3130
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2SC3130
Abstract: No abstract text available
Text: Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm 0.40+0.10 ñ0.05 0.16+0.10 -0.06 ● 0.4±0.2 High transition frequency fT. Small collector output capacitance Cob and common base reverse transfer capacitance Crb.
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2SC3130
2SC3130
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2
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2SC3130
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2SC3130
Abstract: No abstract text available
Text: Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob and reverse transfer capacitance (Common emitter) Crb
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2SC3130
2SC3130
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2SC3130
Abstract: XP05531
Text: Composite Transistors XP05531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing 0.65 1 6 2 5 3 4 2SC3130 x 2 elements • Absolute Maximum Ratings Parameter 1 : Emitter Tr1 2 : Base (Tr1) 3 : Base (Tr2) (Ta=25˚C)
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XP05531
2SC3130
2SC3130
XP05531
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2SC3130
Abstract: No abstract text available
Text: Composite Transistors XP06531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency amplification, oscillation, and mixing 1.25±0.1 0.65 2 5 3 4 ● 2SC3130 x 2 elements • Absolute Maximum Ratings 0 to 0.1 ■ Basic Part Number of Element
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XP06531
2SC3130
2SC3130
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2SC3130
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 3
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2SC3130
2SC3130
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2SC3130
Abstract: No abstract text available
Text: Transistor 2SC3130 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit: mm +0.2 2.8 –0.3 Ta=25˚C Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO
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2SC3130
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2SC3130
Abstract: XN01531 XN1531
Text: Composite Transistors XN01531 XN1531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC3130 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01531
XN1531)
2SC3130
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XN1531
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2SC3130
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 5˚ 2.8+0.2 –0.3 1.50+0.25 –0.05 Th an
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2SC3130
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2SC3130
Abstract: XN02531 XN2531
Text: Composite Transistors XN02531 XN2531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC3130 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN02531
XN2531)
2SC3130
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3130 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing M Di ain sc te on na tin nc ue e/ d 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 0.4±0.2
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2SC3130
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2SC3130
Abstract: XN05531 XN5531
Text: Composite Transistors XN05531 XN5531 Silicon NPN epitaxial planer transistor 3 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 10° 1.1+0.2 –0.1 2SC3130 x 2 elements ■ Absolute Maximum Ratings Parameter 0 to 0.1 ● (Ta=25˚C)
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XN05531
XN5531)
2SC3130
2SC3130
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XN5531
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2SC3130
Abstract: XN2531
Text: Composite Transistors XN2531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC3130 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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2SC3130
Abstract: XN1531
Text: Composite Transistors XN1531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SC3130 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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2SC3130
Abstract: XP05531
Text: Composite Transistors XP05531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency, oscillation and mixing 0.65 1 6 2 5 3 4 2SC3130 x 2 elements • Absolute Maximum Ratings Parameter 1 : Emitter Tr1 2 : Base (Tr1) 3 : Base (Tr2) (Ta=25˚C)
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XP05531
2SC3130
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xp06531
Abstract: No abstract text available
Text: Composite Transistors XP06531 Silicon NPN epitaxial planer transistor Unit: mm For high frequency amplification, oscillation, and mixing 0.65 1 6 2 5 3 4 2SC3130 x 2 elements • Absolute Maximum Ratings Parameter 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2)
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XP06531
2SC3130
xp06531
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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2sc3943
Abstract: 2SC4117 2sc2060 2SC2553 2SC3170 2SC4258 2SC2242 2SC3536 4181A 2SC3039
Text: - 184 - a « Type No. tt « Manuf. 2SC 4179 a a 2SC 4180 y s w 2SC 4181 m K ^ 2SC 4181A 2SC 4182 ^ H * SANYO 2SC4400 M TOSHIBA £ NEC B tL HITACHI V ± il F U J ITSU fô T MATSUSHITA 2SC4253 2SC3936 2SC4117 2SD1821 H £ MITSUBISHI 2SC4258 2SC3938 2SC4116 —
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2SC4400
2SC4253
2SC3936
2SC4258
2SC4098
2SC4117
2SD1821
2SC4102
2SC4413
2SD1824
2sc3943
2SC4117
2sc2060
2SC2553
2SC3170
2SC2242
2SC3536
4181A
2SC3039
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4288A
Abstract: 2sc3936 hitachi 4269 2SC4903 2SC3874 2SC3995 2SC4186 2SC3931 2SC3210 2SC4083
Text: - 18 6 - Si € Type No. tt € Manuf. 1nJ 1“ ^ £ tN 2SC 4247 2SC 4248 2SC 4249 H * SANYO a s£ % TOSHIBA NEC ± a FUJITSU % T MATSUSHITA 2SC4404 2SC4186 2SC4903 2SC3934 2SC4404 2SC4186 2SC4264 2SC3934 2SC4263 2SC3931 2SC4400 2SC 4250 tL HITACHI H £ MITSUBISHI
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OCR Scan
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2SC4404
2SC4186
2SC4903
2SC3934
2SC4264
2SC4083
2SC4400
4288A
2sc3936 hitachi
4269
2SC4903
2SC3874
2SC3995
2SC3931
2SC3210
2SC4083
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Toshiba 355-1
Abstract: 2SC3555 3563 2SC351 2SC4158 2SC3531 2sc3153 2SC3170 NEC 3552 2SC3556
Text: 166 - m % Type No. 2SC 3534 J 2SC 3535 ^ 2SC 3536 V 2SC 3540 ^ tt B m. B B V m ì s 2SC 3544 , 2SC 3545 ^ 2SC 3546 B B m 2SC 3547 2SC 3547A 2SC 3547B 36 $ S $ 3548 3549 3550 3551 3552 3553 3554 3555 3556 3557 3558 3559 3560 3561 3562 S JE S S 2 / *±S» * ± * »
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2SC4427
2SC3657
2SC3322
2SC3506
2SC4428
2SD1431
2SC3507
2SC4429
2SD1433
2SC3258
Toshiba 355-1
2SC3555
3563
2SC351
2SC4158
2SC3531
2sc3153
2SC3170
NEC 3552
2SC3556
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