2SC2335 TRANSISTOR Search Results

2Sc2335

Abstract: transistor 2sc2335 how to check ic ship 2SC2335 equivalent 2sC2335 TRANSISTOR equivalent 2sc2335 transistor
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such

2sc2335

Abstract: REGULATOR IC FOR 150V 2SC2335 equivalent
Contextual Info: Inchange Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO sus =400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A

2sc2335

Abstract: SUS CIRCUIT
Contextual Info: SavantIC Semiconductor Product Specification 2SC2335 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Collector-emitter sustaining voltage VCEO sus =400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A

2SC2335

Contextual Info: JMnic Product Specification 2SC2335 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Collector-emitter sustaining voltage VCEO sus =400V(Min) ・Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ・Switching time-tf=1.0 s(Max.)@IC=3.0A

2SC2335

Abstract: transistor2sC2335 MP-25 2sc233 2sc2335 transistor
Contextual Info: データ・シート シリコン・パワー・トランジスタ Silicon Power Transistor 2SC2335 NPN 三重拡散形シリコン・トランジスタ 高速度高耐圧スイッチング用 工業用 ★ 2SC2335 は，高速度高耐圧スイッチング用として開発された

30L60

Abstract: 2SC2335 z225
Contextual Info: ÆàMOSPEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit, they are particularly suited for 115 and 220 V switchmode applications such as switching regulator's,inverters,DC -DC and conveter

BU409D

Abstract: rca1805 IR431 RCA410 RCA1B09 RCA423 sgs-ates transistors IR423 IR410 BU104
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD r 'CBO Max hFE fT ON) Min (Hz) Max (A) Max (s) (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .

2SC2335

Abstract: power transistor
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC2335

Abstract: MP-25
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: TO-220 MIN MAX A B 14.42 9,63 C D E F G H J 3,56 16,51 10.67 4,83 0,90 1,40 3,88 2,79 K L M N 12,70 DIM =r uf D^ U g - 1,15 3,75 2,29 2,54 - 2,03 7 3,43 0,56 14,73 6,35 2,92 31,24 DEG TO-220 Power Package Transistors NPN Maximum Ratings Type No. (V) Min

2N5296 pin configuration

Abstract: 2SC23350 2SC2073 2sc2233 2sc2238 2N5294 2N5296 2N6292 2SC1398 2SC1398P
Contextual Info: TO-220 DIM A B C D E F G H J K L M N MIN MAX 16,51 10,67 4,83 0,90 1,15 1,40 3,75 3,88 2,29 2,79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2,92 31,24 7 DEG 14.42 9,63 3,56 TO-220 Power Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified)

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage, high-speed,pow«r switching in inductive circuit, they are particularly suited for 11 5 and 220 V

SC22-3

Abstract: 2sc2238
Contextual Info: TO-220 < o >r * a I V S si PIN CONFIGURATION:— 1. BASE 2. COLLECTOR 3. EMITTER M_ MIN 14.42 9.63 3,56 DIM A B C D E F G h J K L M N MAX 16.51 10.67 4.83 0.90 1,40 1.15 3.75 3.85 2,29 2,79 2,54 3.43 0,56 12,70 14.73 6,35 2,03 2,92 31.24 7 1/2 DEG — - -

2SC23350

Abstract: 2SC22380 2SC2238Y 2SC2238-0 2SC2335-0 2sc2233 2sc2238 2SC1398Q 2N5296 pin configuration 2N5294
Contextual Info: PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MIN WAX A B 1 4 .4 2 9 ,6 3 16,51 C D E F G 3 ,5 6 H J 2 ,5 4 - 3 ,4 3 0 ,5 6 K L 1 2 ,7 0 - 1 4 ,7 3 M N 2 ,0 3 2 ,9 2 DIM - 1 ,1 5 3 ,7 5 2 ,2 9 7 1 0 .6 7 4 ,8 3 0 ,9 0 1,40 3 ,8 8 2 ,7 9 6 ,3 5

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

DK53

Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
Contextual Info: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

DK53

Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Contextual Info: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240

equivalent transistor bul128

Abstract: HALL EFFECT 21E equivalent of transistor 2sc4106 2sC2335 TRANSISTOR equivalent Shortform Transistor Guide BUL208 BUF656B KSE13007 equivalent BUD620 BUL128 replacements
Contextual Info: Bipolar Power Transistors Data Book 1997 General Information Data Sheets Addresses Table of Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

2SC5664

Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation