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    2SC2120 Y TRANSISTOR Search Results

    2SC2120 Y TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2SC2120 Y TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol


    Original     		2SA950 2SC2120 -10mA -100mA -700mA -500mA, -20mA PDF

    2SA950 PNP

    Abstract: 2SA950 2SC2120 35VCEO
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		2SA950 2SC2120 -100mA -700mA -500mA, -20mA -10mA 2SA950 PNP 2SA950 2SC2120 35VCEO PDF

    2SC2120

    Abstract: 2sC2120 y transistor transistor 2sc2120
    Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2120 700mA 500mA, 2SC2120 2sC2120 y transistor transistor 2sc2120 PDF

    2SC2120

    Abstract: 2sc2120 equivalent
    Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2120 100mA 700mA 500mA, 2SC2120 2sc2120 equivalent PDF

    2SC2120

    Abstract: 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor
    Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2120 700mA 500mA, 2SC2120 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor PDF

    2SC2120

    Abstract: 2sc2120 equivalent 2sC2120 y transistor
    Text: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		2SC2120 100mA 700mA 500mA, 2SC2120 2sc2120 equivalent 2sC2120 y transistor PDF

    2SC2120Y

    Abstract: 2SC2120 2SC2120-Y
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating


    Original     		2SC2120-O 2SC2120-Y 2SA950 2SC2120Y 2SC2120 2SC2120-Y PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating


    Original     		2SC2120-O 2SC2120-Y 2SA950 150rom PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating


    Original     		2SA950-O 2SA950-Y 2SC2120 PDF

    2SA950Y

    Abstract: 2SA950-Y 2SA950
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA950-O 2SA950-Y Features x x x x x Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating


    Original     		2SA950-O 2SA950-Y 2SC2120 2SA950Y 2SA950-Y 2SA950 PDF

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SC2120 2SA950 SC-43 2SC2120 2SA950 PDF

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SC2120 2SA950 SC-43 2SC2120 2SA950 PDF

    2SC2120

    Abstract: 2SA950
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SC2120 2SA950 2SC2120 2SA950 PDF

    2SA950

    Abstract: 2SC2120
    Text: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		2SC2120 2SA950 SC-43 2SA950 2SC2120 PDF

    IC 7411 DATA SHEET

    Abstract: IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 2SC2120 Voltts IC 7416 datasheet 7411 IC
    Text: TO-92 PLASTIC-ENCAPSULATE TRANSISTORS 2SC2120 TRANSISTOR NPN FEATURES Power dissipation PCM: 0.6W (Tamb=25ºC) Collector Current TO-92 ICM: 0.8A 1. EMITTER Collector-base voltage V 2. COLLECTOR : 35V (BR) CBO Operating and storage junction temperature range


    Original     		2SC2120 500mA, 2SC2120 IC 7411 DATA SHEET IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 Voltts IC 7416 datasheet 7411 IC PDF

    2SC5471

    Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
    Text: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN


    Original     		2SC1815 2SA1015 2SC2458 2SA1048 2SC2240 2SA970 2SC2459 2SA1049 A1587 2SC4117 2SC5471 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range


    Original     		2SC2120 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO:


    Original     		2SC2120 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2120 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to 2SA950 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		2SC2120 2SA950 100mA 500mA PDF

    2SA950

    Abstract: 2SA95 C 2120 Y Produced by Perfect Crystal Device Technology
    Text: 2SA 950 5/ U D > P N P l£ 9 * î / ? j l ^ h 5 > 5t t 5 > P C T fia ^ IL IC O N PNP EPITAXIAL o Audio Power Amplifier Applications • : hFB=10 0~3 20 B |R 7" 5» J/ » 7 1a . r 1 W O 6b * f> #1 i +0 2SC2120 t a y ?■i) * ft £ £ t "fo Iff Output Applications


    OCR Scan     		2sa950 8S02I20 2S02120 SO-43 228to 2SA950 2SA95 IC/IB-25 C 2120 Y Produced by Perfect Crystal Device Technology PDF

    2SC2120

    Abstract: 2sC2120 transistor
    Text: TOSHIBA TRANSISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL 2 S C 2 1 20 DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC2120) Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • High : hpg (1) = 100—320 1 W atts Amplifier Applications. • P n 'm n lp T M iin fn rv i n 9 ftA Q £ il


    OCR Scan     		2SC2120 2SC2120) 2SC2120 2sC2120 transistor PDF

    2SC2120

    Abstract: 2SA950 2sC2120 y transistor transistor 2sc2120
    Text: 2SC2120 TO SH IBA 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • High hEE : hEE (i) = 100~320 • 1 Watts Amplifier Applications. • Complementary to 2SA950 . 5.1 MAX. 0.45 0.55 MAX.


    OCR Scan     		2SC2120 2SA950 SC-43 2SC2120 2SA950 2sC2120 y transistor transistor 2sc2120 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2120 TOSHIBA TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 7sr ? 1 ? n Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE : hpg (i) = 100-320 1 Watts Amplifier Applications. Complementary to 2SA950 . 5.1 M AX. 0.45 0.55 M A X.


    OCR Scan     		2SC2120 2SA950 PDF

    2SC2120

    Abstract: ZZ25 2SA950 ZZ25IZI
    Text: TOSHIBA_ 2SC2120 2 S C 2 1 20 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • • High hpE • hpE (l) = 100—320 1 Watts Amplifier Applications.


    OCR Scan     		2SC2120 2SA950 SC-43 ZZ25IZI 2SC2120 ZZ25 2SA950 ZZ25IZI PDF