2SC2120 TRANSISTOR Search Results

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

2SA950

Abstract: 2SC2120
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 · 1 watts amplifier applications. · Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

2SC2120

Abstract: 2SA950
Contextual Info: 2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC2120

Contextual Info: DC COMPONENTS CO., LTD. 2SC2120 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base o

2SC2120Y

Abstract: 2SC2120 2SC2120-Y
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating

2222s

Abstract: 2SA950 2SC2120
Contextual Info: 1112SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2120 Audio Power Amplifier Applications • High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics

2SC2120

Abstract: 2sC2120 y transistor transistor 2sc2120
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Plastic Encapsulate Transistors

Abstract: 2SC2120 2sc2120 equivalent
Contextual Info: 2SC2120 NPN Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter 1 2 Value Units VCBO Collector-Base Voltage

2SA950

Abstract: 2SC2120 2SA950 Y
Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

2SA950

Abstract: 2SC2120
Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W Output Applications y Complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) Symbol

2SC2120

Abstract: 2sc2120 equivalent
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2120

Abstract: 2sc2120 equivalent 2sC2120 transistor 2sC2120 y transistor
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating

IC 7411 DATA SHEET

Abstract: IC 7411 2sC2120 transistor f 7416 IC 7411 datasheet IC 7416 2SC2120 Voltts IC 7416 datasheet 7411 IC
Contextual Info: TO-92 PLASTIC-ENCAPSULATE TRANSISTORS 2SC2120 TRANSISTOR NPN FEATURES Power dissipation PCM: 0.6W (Tamb=25ºC) Collector Current TO-92 ICM: 0.8A 1. EMITTER Collector-base voltage V 2. COLLECTOR : 35V (BR) CBO Operating and storage junction temperature range

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2120-O 2SC2120-Y Features x x x x Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating

2SA950

Abstract: 2sa950y 2SA950-Y 2sc212 2SA950 PNP 2SA950-O 2SC2120
Contextual Info: 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   1W output applications Complementary to 2SC2120 G H Emitter Collector Base

2SA950 PNP

Abstract: 2SA950 2SC2120 35VCEO
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR PNP TO-92 FEATURES y 1W output applications y complementary to 2SC2120 1.EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: FORWARD INTIRNATONAL ELECTRONICS LID . 2SC2120 SEMICONDUCTOR "" TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY A M PLIFIER H IG H FREQUENCY OSC. Package: TO-92 * Complement to 2SA950 * Collector-Emitter Voltage VCEO=30V C haracteristic Symbol R ating

Contextual Info: 2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA950 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • 1 W output applications • Complementary to 2SC2120 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SC2120

Abstract: 2sc2120 equivalent 2sC2120 y transistor
Contextual Info: ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2120 TRANSISTOR NPN 1. EMITTER FEATURES z High DC Current Gain z Complementary to 2SA950 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.6 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage V(BR)CBO: 35 V Operating and storage junction temperature range