2SC2003 TRANSISTOR Search Results

2SC2003

Abstract: I3002 2SC2003 transistor transistor 2sC2003
Contextual Info: NPN SILICON TRANSISTOR 2SC2003 D E S C R IP TIO N The 2SC2003 is designed for use in driver stage of high voltage audio equipments. FEATURES • High total power dissipation. Pj : 600 mW • High hp£ and high voltage. hpE l c = 50 mA : 200 TYP. V CEO = 80 V

NTC2335

Abstract: 2SA603 2SC2719 2SA1154 28c128 2SA1151 2sc2720 2SC2718 NTD565 2SA1152
Contextual Info: Darlington Power Transistors ' ^ U c DC lA] Package \ Vceo M \ 60 TO-126 .80 TO-126 3.0 2.0 1.5 5.0 7.0 NTD985 NTB794 NTD986 NTB795 100 T0-220AB NTD560 NTB601 400 TO-220AB NTD987 NTD1162 (300V) 15 25 2SD1296 (MP-80) NTD412 (TO-3) 2SD1297 (MP-80) 10 NTD411

2SA1152

Abstract: NTC2335 2SC2719 2SC2720 2SA1154 2SA603 25a812 2SC943 2SC2718 25B624
Contextual Info: N E C ELECTRONICS INC Transistors • Darlington Power Transistors DC [Al 1.5 V ceo m \ Package \ * TO-126 80 100 400 TO-220AB TO-220AB NTD987 NTD1162 (300V) V ceo I V j \ 1.5 2.0 NTD411 (TO-3) NTD1210 (MP-80) NTB897 (MP-80) NTD565 (TO-3) 2SD1298 (MP-80)

2sa1154

Abstract: 2SC2719 2sc2720 2SC1280 2SA1152 2SA1151 2SA603 2SD1297 2SC943 NTC2335
Contextual Info: N E C ELECTRONICS INC C Transistors ET b4S7SES OOOblDl 1 STC iààau M i T -33- 0 / •Wim - W - I J .4 I U Ü Í I J W 3 B ! U W M P H 1 »VJW» '»J-M* 1 ■JM ■ r t n ïi « t i n t o • Darlington Power Transistors '^ U c VceoM (DC |A1 \ Package \

2SC2271

Abstract: 2SC1815BL 2SC1740 2SC1740S 2SC1815 2SC18150 2SC1815G 2SC1815Y 2SC1906 2SC1906Y
Contextual Info: TO-92 Plastic Package Transistors NPN Maxi num R atings Type No. ^cac (V) Min ^CEC ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25 c 'cBO ^cs (HA) @(V Max *CES ^CE *V e ipA) 6(V ) Max Min !c i ^CE

2SC2719

Abstract: 2sc2720 NTC2335 2SC1280A 2SA603 28c128 2SA1154 NTB601 NTC27 NTB795
Contextual Info: N E C ELECTRONICS INC STC C Transistors ET *fS*B U .Jjl.W bMSTSES DOOblOl 1 D atom [v j w -I»W1 -i»'. I.U I •JU iM à ta iiita iib É ttâ d K i • D arlington Pow er Transistors '"~'''S=-Jc DC [A] Vceom \ Package \ 60 TO-126 80 TO-126 3.0 2.0 1.5

2SC1959Y

Abstract: 2SC1815Y 2SC2002L 2SC18150 2SC1815BL 2SC1740 2SC1740S 2SC1815 2SC1815G 2SC1906
Contextual Info: TO-92 Plastic Package Transistors NPN Maxi num R atings Type No. ^cac (V) Min ^CEC ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) (A) @Tc=25 c 'cBO ^cs (HA) @(V Max *CES ^CE *V e ipA) 6(V ) Max Min !c i ^CE

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

2sc2720

Abstract: 2SA1152 2SA603 2SC2719 S0233 NTC2335 2SC1280A 2SC2336 2SA1151 2SA100B
Contextual Info: 2SA1006,1006A.1006B/2SC2336,2336A,2336B 2SA1006,1006A,1006B/2SC2336,2336A,2336B P N P /N P N PNP/NPN Silicon Epitaxial Transistor EBT X ^ + '> 7 ; H ^ Audio Frequency Power Amplifier High Frequency Power Amplifier i& m ijz m tim im , æ m i& w t im m m 0 ^ *1 5 0 -5 0 0

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^cao (V) Min ^CEO V EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po (W) (A) @Tc=25“c 'cBO 'c e s ^CE (UA) @(V) (PA) 0(V) Max Max \ e Min Ic * (mA)

2sc2271e

Contextual Info: TO-92 Plastic Package Transistors NPN E lectrical C h aracteristics (Ta=25*C, U nless O therw ise Specified) M aximum Ratings Type No. 2SC1959Y ' ' CBO (V) Min 35 ^CEO V EBO (V) Min (V) Min 30 5 'c PD (W) (A) @Tc=25°c 0.5 0.5 *CBO ^CB *CES (ma> § (V) (mA)

2SC2003

Abstract: transistor 2sc2002 2SC2002 2SA953 PA33 PT600 npn transistor w5
Contextual Info: NEC j m * = r i \ r r x y ' j 3 > h ^ X ^ Silicon T ran sisto rs A 2SC2002,2003 NPN Silicon Epitaxial Transistor Audio Frequency Am plifier ftM m / « « /F E A T U R E S PACKAGE D IM ENSIO NS Unit : mm o t — r"4 Yv4 0 2SA953, 9 5 4 ¿ 3 > 7 °iJ (, O

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

2SC3133 cross reference

Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
Contextual Info: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905

2SC5664

Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation

K68A

Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
Contextual Info: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8

NEC 10F triac

Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Contextual Info: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2

sc5 s dc 6v relay

Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

transistor NEC 2SK2500

Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid