2SC1959 TRANSISTOR Search Results

2SC1959

Abstract: 2SA562TM 400 Watt Audio amplifier IC
Contextual Info: 2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA

2SC1959

Abstract: 2SA562TM
Contextual Info: 2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SC1959 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Unit: mm • Excellent hFE linearity : hFE (2) = 25 (min): VCE = 6 V, IC = 400 mA

Contextual Info: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • . 5.1 M A X . Excellent hpg Linearity : hpE (2) = 25 (Min.) : V çe = 6V, Iç = 400mA

2SC1959

Abstract: 2SA562TM
Contextual Info: TOSHIBA 2SC1959 2SC1959 TO SHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS A U D IO FREQUENCY LO W POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SW ITCHING APPLICATIONS • Excellent hpE Linearity : ^FE (2)-25 (Min.) : Vç;e = 6V, Ic = 400mA

2SC1959

Abstract: 2SA562TM 2SA56 2.1 5.1 AUDIO SWITCHING IC ALL TYPE
Contextual Info: 2SC1959 TO SH IBA TOSHIBA TRANSISTOR SILOCON PNP EPITAXIAL TYPE PCT PROCESS 2SC1959 Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • • • . 5.1 MAX. Excellent hjpg Linearity : ^FE (2)-2 5 (Min.) : Vç;e = 6V, Ic = 400mA

2SC1959

Abstract: 2sc1959 transistor
Contextual Info: 2SC1959 2SC1959 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO: Operating and storage junction temperature range 3. BSAE 1 2 3 Tstg: -55℃ to +150℃

C1959

Abstract: c1959 transistor 2sc1959 c1959 Y transistor C1959 NPN Transistor 2SC1959Y transistor c1959 2SC1959-GR 2SC1959-Y 400 Watt Audio amplifier IC
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x • Audio frequency low power amplifier applications, driver stage

C1959

Abstract: c1959 transistor C1959 NPN Transistor amplifier mcc transistor c1959
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Audio frequency low power amplifier applications, driver stage

C1959

Abstract: c1959 transistor transistor c1959 C1959 NPN Transistor 2SC1959Y
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Audio frequency low power amplifier applications, driver stage

C1959

Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Audio frequency low power amplifier applications, driver stage

C1959

Abstract: 2SC1959 c1959 Y transistor c1959 transistor 2SC1959Y
Contextual Info: MCC TM Micro Commercial Components 2SC1959-O 2SC1959-Y 2SC1959-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x • Audio frequency low power amplifier applications, driver stage

datasheet 2sc1959

Abstract: 2SC1959
Contextual Info: DC COMPONENTS CO., LTD. 2SC1959 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency low-power amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Collector 3 = Base

2SC1959

Abstract: 2SC1959Y 2SC1959-Y 2sc1959 transistor 2Sc1959 equivalent 2SC1959-0 datasheet 2sc1959 2SC1959-O
Contextual Info: 2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Excellent hFE Linearity  High Transition Frequency TO-92 G H Emitter Collector

2SA562TM

Abstract: 2SC1959
Contextual Info: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

2sc1959 transistor

Abstract: datasheet 2sc1959 2SC1959
Contextual Info: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC1959 TRANSISTOR NPN 1. EMITTER FEATURES z Excellent hFE Linearity z High Transition Frequency 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR（ NPN ） TO—92 FEATURES Power amplifier applications 1.EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO

2sc1959 transistor

Abstract: 2SC1959
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 35 V V(BR)CBO:

2SC1959

Contextual Info: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be

datasheet 2sc1959

Abstract: 2SC1959
Contextual Info: ST 2SC1959 NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be

2SC1959

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR NPN TO-92 FEATURES z Excellent hFE linearlity 1.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1959 TO-92 TRANSISTOR NPN FEATURES z Excellent hFE Linearlity 1.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage

Contextual Info: TO-92 Plastic-Encapsulate Transistors 2SC1959 TRANSISTOR（ NPN ） TO—92 FEATURES Power amplifier applications 1.EMITTER MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage