2SC1674 TRANSISTOR Search Results

2SC1674

Contextual Info: 2SC1674 2SC1674 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.02 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 3. BASE . 1 2 3 TJ, Tstg: -55℃ to +150℃

Contextual Info: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1674 DESCR IPTIO N The 2SC1674 is designed fo r use in FM RF am p lifie r and PAC KAG E DIM EN SIO N S local oscillator o f FM tuner. FE A TU R E S in millimeters inches 5 2 MAX. (0204 MAX.) • High gain bandw idth p roduct ( f t = 6 0 0 MHz TYP.)

Transistor 2sC1674

Abstract: 2SC1674 PA33 VCE-60
Contextual Info: NPN SILICON TRANSISTOR 2SC1674 D E S C R IP TIO N The 2SC1674 is designed for use in FM RF amplifier and PAC KAG E D IM E N S IO N S local oscillator of FM tuner. in millimeters inches 5.2 M A X .' • High gain bandwidth product (f-j-= 6 0 0 M H z T Y P .

fm tuner ic

Abstract: 2SC1674 ST2SC1674
Contextual Info: ST 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1674 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC1674

Abstract: 2SC1674Y 2SC1674BL Transistor 2sC1674
Contextual Info: 2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Switching and Amplification TO-92 G H Emitter Collector Base

fm tuner ic

Abstract: 2SC1674
Contextual Info: DC COMPONENTS CO., LTD. 2SC1674 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for TV PIF, FM tuner RF amplifier, mixer, and oscillator applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter

Contextual Info: | e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1674 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA TV PIE A M P L IF IE R S TUNER RF AMPLEFIER,MIXER,OSCILLATOR * High Current Gain-Bandwidth Product fT=600MHz Typ * High Power Gain Gpe=22d B at f=100MHz

fm tuner ic

Abstract: 2SC1674
Contextual Info: ST 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1674 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.02 A Collector-base voltage V(BR)CBO:

2SC1674

Abstract: fm tuner ic
Contextual Info: ST 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

fm tuner ic

Abstract: 2SC1674 st2sc1674
Contextual Info: ST 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

2SC1674

Contextual Info: Transistors 2SC1674 USHA INDIA LTD TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain-Bandwidth Product fT=600MHz (Typ) • High Power Gain Gpe=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1674 TRANSISTOR（ NPN ） TO—92 FEATURE Power dissipation PCM : 0. 25 W（Tamb=25℃） Collector current ICM : 0.02 A Collector-base voltage V BR CBO : 30 V Operating and storage junction temperature range

2SC1674

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.02 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range

XL1225 equivalent

Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
Contextual Info: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055

2SC930

Abstract: 2SC947 2SC948 2sc922 2SC1923-O 2SC929 2sc717
Contextual Info: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H„ VcE Hrf v* (m W ) Ic (mA) VcEO (V) min max N N N N N TO-92A TO-72G TO-72G TO-92B TO-72G 625 140 200 200 120 50 30 20 50 20 15 32 15 19 15 20 40 40 40 35 170 150 300 # 2SC829 2SC838

2SC922

Abstract: 2SC948 2N4935 2N5132 2sc929 2N4994 2SC947 2SC1789 2SC838 2N4934
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J

2sc948

Abstract: 2N4935 2SC922 2SC1674 2sc717 2SC947 2SC839 2sc929 2SC930 2SC1730
Contextual Info: RF-IF High Frequency Transistors POLA­ RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J

2SC817

Abstract: 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2N5130 2n5179 2SC1789 2SC838
Contextual Info: NO. MAXIMUM RATINGS Pd ImWl •c ImAI V CE SAT V CEO (V) min max 'c ImAI V CE (V) max (V) 'c (mA) fT min Cob Cre« max max (MHz) (pF) (dB) N.F. 2N5127 2N5130 2N5131 2N5132 2N5179 N N N N N TO-106 TO-106 TO-106 TO-106 TO-72G 200 200 200 200 200 100 50 200