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Abstract: No abstract text available
Text: Power Transistors 2SB0954, 2SB0954A 2SB954, 2SB954A Silicon PNP epitaxial planar type For power amplification • Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with
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2SB0954,
2SB0954A
2SB954,
2SB954A)
2SB0954
2SB0954A
2SB0954
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2SB0954
Abstract: 2SB0954A 2SB954 2SB954A
Text: Power Transistors 2SB0954, 2SB0954A 2SB954, 2SB954A Silicon PNP epitaxial planar type For power amplification • Features Parameter Symbol Collector to 2SB0954 base voltage 2SB0954A Collector to 2SB0954 Ratings –60 V –80 Emitter to base voltage VEBO
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2SB0954,
2SB0954A
2SB954,
2SB954A)
2SB0954
2SB0954
2SB0954A
2SB954
2SB954A
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2SB954
Abstract: 2SB954A
Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB954 2SB954A DESCRIPTION •With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage APPLICATIONS ·For power amplification
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2SB954
2SB954A
O-220Fa
2SB954
10MHz
2SB954A
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2SB954
Abstract: 2SB954A
Text: Power Transistors 2SB954, 2SB954A Silicon PNP epitaxial planar type For power amplification • Features Unit: mm Parameter Symbol Collector to 2SB954 base voltage 2SB954A Collector to 2SB954 Ratings –60 V –80 Emitter to base voltage VEBO –5 V Peak collector current
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2SB954,
2SB954A
2SB954
2SB954
2SB954A
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2SB0954
Abstract: 2SB0954A 2SB954 2SB954A
Text: Power Transistors 2SB0954, 2SB0954A 2SB954, 2SB954A Silicon PNP epitaxial planar type For power amplification • Features M Di ain sc te on na tin nc ue e/ d Unit: mm Parameter Symbol Collector to 2SB0954 base voltage 2SB0954A Collector to 2SB0954 VCBO
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2SB0954,
2SB0954A
2SB954,
2SB954A)
2SB0954
2SB0954
2SB0954A
2SB954
2SB954A
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2SB954
Abstract: 2SB954A
Text: Inchange Semiconductor Product Specification 2SB954 2SB954A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage APPLICATIONS
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2SB954
2SB954A
O-220Fa
2SB954
10MHz
2SB954A
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2SB954
Abstract: 2SB954A
Text: JMnic Product Specification 2SB954 2SB954A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High forward current transfer ratio hFE which has satisfactory linearity ・Low collector saturation voltage APPLICATIONS ・For power amplification
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2SB954
2SB954A
O-220Fa
2SB954
10MHz
2SB954A
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2N3633
Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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2n4889
Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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2SB909
Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125
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2SB901
2SB902
2SB903
2SB904
2SB905
2SB906
2SB907
2SB908
2SB909
2SB910
2SB909
2SB971
2SB978
2sb911
2SB901
2SB917
2SB918
2SB983
2SD1347
2SB902
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Tip300
Abstract: 2SA8140 BCX53 Rohm 2SA8150 rohm 6AE 2SA1358Y MM4006 2SA1358-Y 2SA815 2sb631 hitachi
Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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202AC
220AB
126var
Tip300
2SA8140
BCX53 Rohm
2SA8150
rohm 6AE
2SA1358Y
MM4006
2SA1358-Y
2SA815
2sb631 hitachi
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diode 2U 66
Abstract: STI3007 diode 2U 55 2u 85 diode STI-3007 diode 2U SSP60B STH506 2N3741 MOTOROLA 2sc2317
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT ICBO Max PD ON) Min (Hz) (A) Max r Max (s) (CE)Mt 'oper Max (Ohms) Max (°C) 600m 600m 175 175 140 140 J J J J 140 175 140 140 175 J J J J J Package Style Devices 20 Watts or More, (Cont'd)
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2N3741
2N3741A
BDT30B
SSP58B
SSP60B
TIP30B
2N4920
2N4923
2SB954A
diode 2U 66
STI3007
diode 2U 55
2u 85 diode
STI-3007
diode 2U
STH506
2N3741 MOTOROLA
2sc2317
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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2SB954
Abstract: 2SB954A
Text: Power Transistors 2SB954, 2SB954A 2SB954, 2SB954A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier U ni t ! mm 4.4max. _10.2max. 5.7max. • Features • High DC cu rre n t gain Iife and good linearity 2.9max • Low collector-eim itter saturation voltage (VcE(sati)
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2SB954,
2SB954A
2SB954
001b20Ã
2SB954A
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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2SB962
Abstract: 2SD1288 2SB938A 2SB939 2SB939A 2SB940 2SB940A 2SB941 2SB941A 2SB942
Text: - 68 T a = 2 5 cC , * T O T c = 2 5 t ; M % íí 2SB938A 2SB939 fâT 2SB939A ffl £ íé VcBO Vc e o (V) (V) Ic (D C ) (A) m Pc Pc* ICBO (W) (W) (max) (//A) VcB (V) % (min) fä (max) tí VcE (V) (T a = 2 5 ' C ) I c/ I e (A) [*EPIÍtypíS] (max) (V) PA/S»
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2SB938A
2SB939
2SB939A
2SB940
2SB940A
2SB941
2SB947A
2SB951A
2SB952
2SB952A
2SB962
2SD1288
2SB941A
2SB942
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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D1274A
Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691
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2SC4627
2SC5021
-2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
2SD2345
D1274A
B1317
C4714
D1707
b1108
c2258 transistor
D2052 transistor
transistor b1154
2sD2504 transistor
B1398
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