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    2SB631* TRANSISTOR Search Results

    2SB631* TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SB631* TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB631

    Abstract: 2SB631K
    Text: JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity


    Original     		PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -50mA 2SB631K

    2SD600

    Abstract: 2SD600K 2sd_600 to126 2sd600k
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION •With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier


    Original     		PDF 2SD600 2SD600K O-126 2SB631/631K VCEO100/120V 2SD600 500mA 2SD600K 2sd_600 to126 2sd600k

    2sb631

    Abstract: 2sb631k
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION •With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity


    Original     		PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -50mA 2sb631k

    2sb631 transistor

    Abstract: 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631 DESCRIPTION •High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600


    Original     		PDF 2SB631 -100V 2SD600 -50mA -500mA 2sb631 transistor 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A

    2SB631

    Abstract: 2SB631K
    Text: Inchange Semiconductor Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity


    Original     		PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -500mA -50mA 2SB631K

    2SD600

    Abstract: 2sd600* transistor hFE is transistor 2sd600 transistor 2SB631 2sb631 transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD600 DESCRIPTION •High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631


    Original     		PDF 2SD600 2SB631 500mA 2SD600 2sd600* transistor hFE is transistor 2sd600 transistor 2SB631 2sb631 transistor

    2SD600

    Abstract: 2sd600k
    Text: Inchange Semiconductor Product Specification 2SD600 2SD600K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier


    Original     		PDF 2SD600 2SD600K O-126 2SB631/631K VCEO100/120V 2SD600 500mA 2sd600k

    2SB631K

    Abstract: D 600K
    Text: Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF ENN346G 2SB631, 631K/ 2SD600, 00V/120V, 100/120V, 2009B 631K/2SD600, O-126 2SB631K D 600K

    transistor D600k

    Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor transistor B631K k b631k

    2sb631 transistor

    Abstract: transistor b631 transistor D600k 2sb631 2sd600
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 2sb631 transistor transistor b631 transistor D600k 2sd600

    transistor D600k

    Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
    Text: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K D600

    650nm laser diode 200mw

    Abstract: DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo
    Text: SANYO Laser Diodes support advanced information society. SANYO has a wide range of laser diodes from 405nm to 830nm in the line-up. SANYO laser diodes are characterized by high power models for DVD±R/RW/-RAM and CD-R. There are also 635nm models for industrial applications such as laser display, bar-code scanners,


    Original     		PDF 405nm 830nm 635nm 808nm 650nm laser diode 200mw DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo

    DL-3147-060

    Abstract: 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v
    Text: LASER DIODE '05-03 Tottori SANYO Electric Co., Ltd Photonics Business Unit Laser sales Section 1-1-10 Ueno, Taito-ku, Tokyo, 110-8534, JAPAN Tel : +81-3-3837-6272 Fax : +81-3-3837-6390 Photonics Business Unit 5-318, Tachikawa-cho, Tottori-city, Tottori, 680-8634 JAPAN


    Original     		PDF 405nm 980nm DL-3147-060 405nm 5mW laser diode DL-7147-201 new focus photodiode 1514 Diode Laser Red 650nm 6mm 5V 5mW DL-5146-251 DL-3148-023 CIRCUIT 650NM laser diode 5mw DL-3147-260 650nm 5mw module 6mm 5v

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037

    D600K

    Abstract: B631K PNP 2SD 2SB631 631k D600K to 126
    Text: Ordering number:EN34SG 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications F e a tu re s • High breakdown voltage Vceo 100/120V, High current 1A. • Low saturation voltage, excellent hpE linearity.


    OCR Scan     		PDF EN34SG 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K B631K, D600K B631K PNP 2SD 631k D600K to 126

    2SB612K

    Abstract: 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417
    Text: smvo MICALESS T0-126ML TRANSISTORS F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting * Plastic-covered heat sink facilitating high-density mounting * Increased collector dissipation when a transistor alone is operated [T0-126ML:1. 3-1.51(18=25^)]


    OCR Scan     		PDF T0-126ML) T0-126ML O-126 2SD826 2SB559 2SD439 2SB632K 2SB612K 2SB986 2SD1348 2SA1380 2SC3503 2sc4675 transistor TO-126 Outline Dimensions 2SA1249 2sa1507 Sanyo Semiconductor 2sc3417

    2SC308

    Abstract: 2SA1699 2SA1392
    Text: S m a l 1- s i g n a l SA\YO Transistors For low noise, h i g h v o l t a g e a n d g e n e r a l use We have other smal 1-signal transistors which are not included in any classified types nor packages in this document. They are for low noise, high voltage and general use.


    OCR Scan     		PDF SC-51 2SA1683 2SC4414 2SA1392 2SC3383 T0-126 2SA1450 2SB631, 2SD600, O-126 2SC308 2SA1699

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


    OCR Scan     		PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    2SB630

    Abstract: 2SB710 2SB628 2SB631 2SB632 2SB709 2SD597 63A50
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF Tc-25 2SB630 2SB710 2SB628 2SB631 2SB632 2SB709 2SD597 63A50

    2SA1392

    Abstract: 2SA1450 2SA1683 2SB631 2SB632 2SB632K 2SC3383 2SC3708 2SC4414 2SD600
    Text: General-application Transistors Absolut« maximum ratings Type No. Package typ Applications VCBO 00 Veto Electrical characteristics Ta = 25 t ICBOmax @VCB te PC (V) VEDO 00 (A) (W ) leso max (? ) UA) tra ve t 1C hFE® VCE- 1C VCB CO hFE VCE 00 VCE (V)


    OCR Scan     		PDF 2SA1683 2SC4414 2SA1392 2SA1450 2SC3383 2SC3708 FC140 2SC4452 2SA1416 2SAI417 2SB631 2SB632 2SB632K 2SD600

    2SD675

    Abstract: 2sd676 2SD674 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 2SD669 7c-25-C) 2SD673 2SD674 2SD675 2SD676 2SD675 2SD673 2SB631 2SD600 2SD612 2SD613 2SD638 2SD639

    AUDIO AMPLIFIER

    Abstract: audio amplifier POWER TRANSISTORS 2SA1766 2SC3650 2SC3651 2SC4390 2SC4705 2SK304 2SK404 2SK546
    Text: Absolute maximum ratings Device Package type Electrical characteristics Ta = 25 "C Icbo max @ VCB Applications VCBO (V) Vceo (V) VEBO (V) lc (A) PC (W ) Tj (C ) hFE (£• Vce - lc Icbo max (|iA) VCB (V) hFE 0.1/0.1 20/40 fT @ Vce - lc VcE (V) lc (mA) fr


    OCR Scan     		PDF FC150 2SC3651 2SC3650 2SA1766 2SC4705 2SC4390 2SK596 2SK546 2SA1813/2SC4413) 2SK304 AUDIO AMPLIFIER audio amplifier POWER TRANSISTORS 2SK404

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


    OCR Scan     		PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362