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    2SB526 CROSS REFERENCE Search Results

    2SB526 CROSS REFERENCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5XRJ11PPXS-014 Amphenol Cables on Demand Amphenol MP-5XRJ11PPXS-014 Flat Silver Satin Modular Crossed wiring Cable, RJ11 / RJ11 14ft Datasheet
    LM103H-3.3/883 Rochester Electronics LLC Two Terminal Voltage Reference Visit Rochester Electronics LLC Buy
    LM103H-3.3 Rochester Electronics LLC Two Terminal Voltage Reference, 1 Output, 3.3V, BIPolar, MBCY2, HERMETIC SEALED, TO-46, METAL, CAN-2 Visit Rochester Electronics LLC Buy
    AD584IR Rochester Electronics LLC AD584 - Three Terminal Voltage Reference, 3 Output, 10V Visit Rochester Electronics LLC Buy
    Touch-Free-User-Interface-Reference-Design Renesas Electronics Corporation Capacitive Sensor Application Reference Design Visit Renesas Electronics Corporation

    2SB526 CROSS REFERENCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


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    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037

    BU108

    Abstract: 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5877 2N5878 Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 VOLTS 150 WATTS


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    PDF 2N5877 2N5878 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 62-3-1-2 2N555 MJ4361 2SC889 MJ1000 MJ3237 BDW94 bd95 DTS801

    BU108

    Abstract: 2SC194 transistor Bc 574 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min = 20 at IC = 25 A


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    PDF BUV20 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 2SC194 transistor Bc 574 2SC1419 BU326 BU100

    transistor 3569

    Abstract: t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD200 PNP MJD210 Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


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    PDF Bandwi32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 transistor 3569 t4 3570 dpak BU 508 transistor BU108 BDW93C ST T4 3580 transistor t4 3570 BU326 BU100 MJ*15033

    transistor MJ2501

    Abstract: BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ413 MJ423 High-Voltage NPN Silicon Transistors 10 AMPERE POWER TRANSISTORS NPN SILICON 400 VOLTS 125 WATTS . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. • High Voltage — VCEX = 400 Vdc


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    PDF MJ413 MJ423 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C transistor MJ2501 BU108 transistor 2sC2238 transistor sdt9201 BDX54 transistor 2SD425 BU326 BU100

    automotive ignition tip162

    Abstract: bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. • Collector–Emitter Sustaining Voltage —


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    PDF BU323AP BU323AP TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C automotive ignition tip162 bc337 cross-reference BU108 BD390 cross reference replacement transistor BC337 BUX48A 2SD1815 "cross reference" TIP102 Darlington transistor Motorola MJ15022 MJ1000

    BU108

    Abstract: TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD676 BD676A BD678 BD678A BD680 BD680A BD682 Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc


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    PDF BD676, BD675, BD676 BD676A BD678 BD678A BD680 BD680A BD682 TIP73B BU108 TRANSISTOR REPLACEMENT GUIDE BD676 BD676A application note BU326 BU100

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


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    PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    Motorola case 77

    Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc


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    PDF MJE200* MJE210* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C Motorola case 77 2N3055 BU108 2sc15 bdw93c applications BU326 BU100

    2SA1046

    Abstract: BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD438 BD440 BD442 Plastic Medium Power Silicon PNP Transistor . . . for amplifier and switching applications. Complementary types are BD437 and BD441. 4.0 AMPERES POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    PDF BD437 BD441. BD438 BD440 BD442 TIP73B TIP74 TIP74A TIP74B TIP75 2SA1046 BD419 2SC1943 BD4202 BD420 2SC2071 2SC1237 2SA939 BD133 2sc1903

    2SC124

    Abstract: 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5194 2N5195* Silicon PNP Power Transistors *Motorola Preferred Device . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS


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    PDF 2N5191, 2N5192 2N5194 2N5195* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC124 2n5195 motorola BU108 bd238 equivalent 2SA1046 tip3055 equivalent BU806 Complement BU326 BU100

    electronic ballast with MJE13003

    Abstract: BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS The BUD43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light


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    PDF BUD43B BUD43B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C electronic ballast with MJE13003 BU108 application notes MJE13005 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 mje13003 ballast MJE2482 2SD675 2SC1419 BU326 BU100

    2N5037

    Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi


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    PDF BD808 BD810* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N5037 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251

    MJ15003 300 watts amplifier

    Abstract: ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN High Voltage Power Transistors MJD340* PNP MJD350* Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. *Motorola Preferred Device DPAK For Surface Mount Applications


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    PDF MJE340 MJE350 MJD340* MJD350* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJ15003 300 watts amplifier ST T4 3580 MJD340 ST mje34 2sd478 D45H8 EQUIVALENT BUX98A SE9302 MJE2482 2SC1419

    TIP35C transistor replacement

    Abstract: TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP35A TIP35B* TIP35C* PNP TIP36A TIP36B* TIP36C* Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • • • • 25 A Collector Current Low Leakage Current — ICEO = 1.0 mA @ 30 and 60 V


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    PDF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2N6490 TIP35C transistor replacement TIP35C replacement 2N3055 equivalent BU108 D45H11 equivalent replacement BDX54 2n3772 EQUIVALENT BU326 BU100

    D72F5T2 NPN

    Abstract: silicon npn 2SD716 transistor BD4202 bd139 3v BU108 2N5978 NPN pin configuration NPN transistor tip41c 724 motorola NPN Transistor with heat pad MJE15029 audio output TRANSISTOR PNP 2SB686
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hFE = 40 Min @ IC = 3.0 Adc


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    PDF MJE15028, MJE15029 MJE15030, MJE15031 220AB MJE15028* MJE15030* MJE15029* MJE15031* TIP73B D72F5T2 NPN silicon npn 2SD716 transistor BD4202 bd139 3v BU108 2N5978 NPN pin configuration NPN transistor tip41c 724 motorola NPN Transistor with heat pad audio output TRANSISTOR PNP 2SB686

    BU108

    Abstract: D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL43B Product Preview SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS The BUL43B has an application specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic ballast “light


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    PDF BUL43B BUL43B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BU108 D45C electronic ballast with MJE13003 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 BDX54 BU326 BU100

    TIP36

    Abstract: BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ410 High Voltage NPN Silicon Transistors 5 AMPERE POWER TRANSISTOR NPN SILICON 200 VOLTS 100 WATTS . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage —


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    PDF MJ410 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 TIP36 BD413 2SC331 BD139.6 BD139.10 BDW59 2sc2159 BD139.16 BD419 2SD364

    pin configuration NPN transistor tip41c

    Abstract: TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT BU108 All similar transistor 2sa715 2SA699 TIP41A semiconductors TIP42A equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP41A TIP41B* TIP41C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. PNP • Collector–Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc


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    PDF TIP41A, TIP42A TIP41B, TIP42B TIP41C, TIP42C TIP41A TIP41B* TIP41C* pin configuration NPN transistor tip41c TIP41C EQUIVALENT TRANSISTOR tip41c pin configuration pin configuration NPN transistor tip42c TIP42C EQUIVALENT BU108 All similar transistor 2sa715 2SA699 TIP41A semiconductors TIP42A equivalent

    BU108

    Abstract: ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV22 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS . . . designed for high current, high speed, high power applications. • High DC current gain: HFE min. = 20 at IC = 10 A


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    PDF BUV22 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 ir411 transistor BC 247 2N592 MJE2482 2SD675 2SC1419 BU326 BU100 BUV22 equivalent

    2SA1046

    Abstract: BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


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    PDF 2N6387 2N6388 2N6387, 220AB 2N6388* TIP73B TIP74 TIP74A 2SA1046 BU108 TRANSISTOR BC 239 c BU326 BU100 mje15033 replacement

    2SA1046

    Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275


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    PDF 2N6274 2N6275 2N6277 2N6377 2N6277* POWER32 TIP73B TIP74 2SA1046 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100

    B0411

    Abstract: B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSOH SGS-THOMSON PAGE REPLACEMENT NEAREST PREFERRED KDUSTHY STANDARD 2N3016 2N5339 93 2N3772 2N3021 BDW52C 169 2N3789 2N3022 BDW52C BDW52C BDW52C 169 169 169 2N3790 2N3791 2N3792 BDW52C BDW52C 169 169 77 2N3863 2N3864


    OCR Scan
    PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 B0411 B0733 THD200F1 dk52 2SC4977 2N5415 REPLACEMENT TIP 2n3055 BD68D SGS-Thomson cross reference BUX37 THOMSON