2SB1668
Abstract: 2SD2607
Text: 2SB1668 Transistors For Power amplification −100V, −8A 2SB1668 zStructure PNP Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) High hFE by darlington connection.
|
Original
|
PDF
|
2SB1668
-100V,
O-220FN
2SD2607
2SB1668
2SD2607
|
2SB1668
Abstract: 2SD2607
Text: 2SB1668 Transistors Power Transistor −100V, −8A 2SB1668 !External dimensions (Units : mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2607.
|
Original
|
PDF
|
2SB1668
-100V,
2SD2607.
O-220FN
-100V
10MHz
2SB1668
2SD2607
|
2SD2607
Abstract: 2SB1668
Text: 2SD2607 Transistors Power Transistor 100V, 8A 2SD2607 !External dimensions (Units: mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668. Limits
|
Original
|
PDF
|
2SD2607
2SB1668.
O-220FN
10MHz
2SD2607
2SB1668
|
Untitled
Abstract: No abstract text available
Text: 2SD2607 Transistors For Power amplification 100V, 8A 2SD2607 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) High hFE by darlington connection.
|
Original
|
PDF
|
2SD2607
O-220FN
2SB1668
|
2SD2607
Abstract: DC 5V to DC 100V CIRCUIT DIAGRAM 2SB1668 TO-220FN
Text: 2SD2607 Transistors_ Power Transistor 100V, 8A 2SD2607 •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668.
|
OCR Scan
|
PDF
|
2SD2607
2SB1668.
O-220FN
300kiÃ
10MHz
2SD2607
DC 5V to DC 100V CIRCUIT DIAGRAM
2SB1668
TO-220FN
|
TRANSISTOR 726
Abstract: 2SB1668 2SD2607 transistor R2A
Text: 2SB1668 Power Transistor -100V, -8A 2SB1668 •External dimensions (Units: mm) •Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode.
|
OCR Scan
|
PDF
|
2SB1668
-100V,
2SD2607.
-50nA
-100V
10MHz
DG5442t,
TRANSISTOR 726
2SB1668
2SD2607
transistor R2A
|