2SB1657
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SB1657 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING
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2SB1657
O-126
-50mA
2SB1657
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2SB1657
Abstract: No abstract text available
Text: JMnic Product Specification 2SB1657 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION
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2SB1657
O-126
-75mA
-50mA
2SB1657
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2SB1658
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SB1658 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN
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2SB1658
O-126
-200mA
-100mA
-50mA
2SB1658
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2SB1657
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SB1657 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN
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2SB1657
O-126
-75mA
-50mA
2SB1657
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LE50
Abstract: 2SB1370 2SB1565 2SB1655 B303
Text: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor 60V, —3A 2S B 1370 • A b s o l u t e m a x im u m r a tin g s •F e a tu re s 1 ) Low saturation voltage, typically VcE(sat) = — 0 . 3 V at le / Ib = —2A / - 0 .2 A . 2 ) Excellent DC curre nt gain characteristics.
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2SB1370
2SB1655/2SB1565
2SB1370
O-220FN
2SB1655
2SB1565
94L-456-B349)
LE50
2SB1565
B303
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2SD2589
Abstract: No abstract text available
Text: 7 0Ω E 2SB1659 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Conditions Ratings Unit V ICBO VCB=–110V –100max µA VCEO –110 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –110min V IC –6 A hFE VCE=–4V, IC=–5A
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2SB1659
100max
110min
5000min
100typ
110typ
2SD2589)
MT-25
2SD2589
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Untitled
Abstract: No abstract text available
Text: 2SB1658 Plastic-Encapsulate Transistors PNP Features TO-126 Power dissipation PCM: 1 W Tamb=25℃ Collector current ICM: -5 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE
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2SB1658
O-126
-50mA
-200mA
-100mA
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2SB1655
Abstract: 2SD2394
Text: Inchange Semiconductor Product Specification 2SB1655 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide area of safe operation ・Complement to type 2SD2394
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2SB1655
O-220F
2SD2394
O-220F)
2SB1655
2SD2394
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B1370
Abstract: B1565 2SB1370
Text: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor —60V, —3A 2S B 13 70 • A b so lu te maximum ratings ( T a = 25‘C ) • F eatu res 1) 2 ) 3} 4) L ow VcE(sat). (Typ.— 0 .3 V at Ic /Ib “ “ ’2/— -0.2A) Excellent D C current gain characteristics.
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2SB1370
2SB1655/
2SB1565
--60V,
2SB1655
94L-456-B349)
B1370
B1565
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching Unit: mm ● ● High collector to emitter VCEO Low collector to emitter saturation voltage VCE sat Allowing automatic insertion with radial taping 90° 2.5±0.1 ● 10.8±0.2
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2SB1653
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2sb1658
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current -5 A ICM: Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range
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O-126
2SB1658
O-126
-50mA
-200mA
-100mA
2sb1658
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2SB1653
Abstract: No abstract text available
Text: Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching M Di ain sc te on na tin nc ue e/ d Unit: mm ● • Absolute Maximum Ratings 10.8±0.2 TC=25˚C Ratings Unit –400 V –400 V –7 V –1 A VCBO VCEO Emitter to base voltage
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2SB1653
2SB1653
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Untitled
Abstract: No abstract text available
Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA
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2SD2589
100max
110min
5000min
60typ
55typ
2SB1659)
FM-25
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2SB1653
Abstract: No abstract text available
Text: Power Transistors 2SB1653 Silicon PNP triple diffusion planar type For power switching Unit: mm ● ● 10.8±0.2 ● High collector to emitter VCEO Low collector to emitter saturation voltage VCE sat Allowing automatic insertion with radial taping 90° 2.5±0.1
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2SB1653
2SB1653
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Untitled
Abstract: No abstract text available
Text: Transistor 2SB1651 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 6.9±0.1 0.8 0.15 14.5±0.5 0.65 max. +0.1 0.45–0.05 Ta=25˚C ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la
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2SB1651
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2SB1651
Abstract: Low-Frequency Low-Noise PNP transistor
Text: Transistor 2SB1651 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 0.8 0.15 14.5±0.5 0.65 max. +0.1 0.45–0.05 Ta=25˚C 2.5±0.5 2.5±0.5 +0.1 • Absolute Maximum Ratings 1.0 ● Low noise voltage NV. High foward current transfer ratio hFE.
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2SB1651
2SB1651
Low-Frequency Low-Noise PNP transistor
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2SB1370
Abstract: 2SB1565 2SB1655
Text: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319
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2SB1370
2SB1655
2SB1565
94L-411-B303)
94L-456-B349)
2SB1370
2SB1565
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IE5A
Abstract: Transistor 2Sd2589 2SD2589 2SB1659
Text: 2SD2589 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1659 VCB=110V 100max µA V IEBO VEB=5V 100max µA 5 V V(BR)CEO IC=30mA 110min V 6 A hFE VCE=4V, IC=5A 5000min∗ IB 1 A VCE(sat) IC=5A, IB=5mA 2.5max PC 50(Tc=25°C) W VBE(sat) IC=5A, IB=5mA
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2SD2589
2SB1659)
FM-25
100max
110min
5000min
60typ
55typ
IE5A
Transistor 2Sd2589
2SD2589
2SB1659
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2SB1658
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1658 DESCRIPTION •High Collector Current -IC= -5A ·High DC Current Gain: hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage: VCE sat = -0.15V(Max.)@IC= -1A APPLICATIONS
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2SB1658
2SB1658
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2SB1655
Abstract: 2SD2394
Text: JMnic Product Specification 2SB1655 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide area of safe operation ・Complement to type 2SD2394 PINNING PIN
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2SB1655
O-220F
2SD2394
O-220F)
dissi50A
2SB1655
2SD2394
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2SB1658
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SB1658 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING
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2SB1658
O-126
-100mA
-50mA
2SB1658
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol
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O-126
2SB1658
-50mA
-100mA
-200mA
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Untitled
Abstract: No abstract text available
Text: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the
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2SB1370
2SB1655
2SB1565
94L-411-B303)
94L-456-B349)
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2SB1651
Abstract: No abstract text available
Text: Transistor 2SB1651 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm 0.8 0.15 14.5±0.5 0.65 max. +0.1 0.45–0.05 Ta=25˚C 2.5±0.5 2.5±0.5 +0.1 • Absolute Maximum Ratings 1.0 ● Low noise voltage NV. High foward current transfer ratio hFE.
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2SB1651
2SB1651
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