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    Panasonic Electronic Components 2SB1623AP

    TRANS PNP DARL 80V 4A TO220D-A1
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    2SB1623 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1623 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1623 Panasonic PNP Transistor Original PDF
    2SB1623 Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1623 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1623 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1623A Panasonic Silicon PNP epitaxial planar type Original PDF
    2SB1623AP Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1623AQ Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1623AR Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1623P Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1623Q Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF
    2SB1623R Panasonic Silicon PNP Epitaxial Planar Type Power Transistor Original PDF

    2SB1623 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1623

    Abstract: No abstract text available
    Text: Power Transistors 2SB1623 Silicon PNP epitaxial planer type Unit: mm For power amplification 4.6±0.2 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60


    Original     		PDF 2SB1623 2SB1623

    2SD2420

    Abstract: 2SD2420A 2SB1623 2SB1623A
    Text: Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C 2SD2420 Emitter open 2SD2420A Symbol Rating


    Original     		PDF 2SD2420, 2SD2420A 2SB1623, 2SB1623A 2SD2420 2SD2420 2SD2420A 2SB1623 2SB1623A

    2SB1623

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Features Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB1623 2SB1623

    2SB1623A

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Features Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB1623A 2SB1623A

    2SB1623A

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SB1623A 2SB1623A

    2SB1623

    Abstract: No abstract text available
    Text: Power Transistors 2SB1623 Silicon PNP epitaxial planar type Unit: mm For power amplification 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage


    Original     		PDF 2SB1623 2SB1623

    2SB1623

    Abstract: 2SB1623A 2SD2420 2SD2420A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1


    Original     		PDF 2002/95/EC) 2SD2420, 2SD2420A 2SB1623, 2SB1623A 2SD2420 2SB1623 2SB1623A 2SD2420 2SD2420A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SD2420, 2SD2420A 2SB1623, 2SB1623A 2SD2420 2SD2420A 2SD2420

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB1623A

    2SB1623

    Abstract: 2SB1623A 2SD2420 2SD2420A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1


    Original     		PDF 2002/95/EC) 2SD2420, 2SD2420A 2SB1623, 2SB1623A 2SD2420 2SB1623 2SB1623A 2SD2420 2SD2420A

    2SB1623

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SB1623 2SB1623

    2SB1623

    Abstract: 2SB1623A 2SD2420 2SD2420A 2SD24
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 M Di ain sc te on na


    Original     		PDF 2002/95/EC) 2SD2420, 2SD2420A 2SB1623, 2SB1623A 2SD2420 2SB1623 2SB1623A 2SD2420 2SD2420A 2SD24

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2 • Features Parameter Symbol


    Original     		PDF 2002/95/EC) 2SB1623A

    2SB1623A

    Abstract: No abstract text available
    Text: Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −80 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB1623A 2SB1623A

    2SB1623A

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features φ 3.2±0.1 ■ Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SB1623A 2SB1623A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623A Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB1623A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB1623

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C


    Original     		PDF 2002/95/EC) 2SD2420, 2SD2420A 2SB1623, 2SB1623A 2SD2420 2SD2420A 2SD2420

    2SB1623

    Abstract: No abstract text available
    Text: Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage Emitter open VCBO −60 V Collector-emitter voltage (Base open)


    Original     		PDF 2SB1623 2SB1623

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1623 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB1623

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2420, 2SD2420A Silicon NPN triple diffusion planar type darlington Unit: mm For power amplification Complementary to 2SB1623, 2SB1623A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1


    Original     		PDF 2002/95/EC) 2SD2420, 2SD2420A 2SB1623, 2SB1623A 2SD2420

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE