2SB1566 TRANSISTOR Search Results

2SD2395

Abstract: 2SB1566 B350
Contextual Info: Transistors 2SB1566 2SD2395 94L-459-B350 (94L-1101-D350) 296

2SB1566

Abstract: 2SD2395 TO220FN
Contextual Info: 2SB1566 Transistors For Power Amplification −60V, −3A 2SB1566 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Low VCE (sat). 2) Wide SOA. 12.0 10.0 0.8

2sb1566

Contextual Info: 2SB1566 2SD2395 Transistors I Power Transistor 60V, —3A 2SB1566 •A b s o lu te maximum ratings (T a = 2 5 ‘C ) •F e a tu re s 1) LowVcE(«rtj. (Typ.— 0.3V at Ic/Ib*=!“ 2/- 0.2A) Param eter Collector-base voltage C oliector-em itter voltage Emitter-base voltage

D2395

Contextual Info: 2SB1566 2SD2395 Transistors Power Transistor —60V, —3A 2SB1566 I # Features # Absolute maximum ratings (Ta=25'C ) '1 ) Low Vce(sm>. (T yp .—0.3V at Ic /Ib » — 2 J — 0 .2A ) 2 ) W ide S O A (safe ope ratin g area). 3 ) C om plem ents th e 2S D2395.

2SB1566

Abstract: 2SD2395
Contextual Info: SavantIC Semiconductor Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2395

2SB1566

Abstract: 2SB156 2SD2395 2sb15
Contextual Info: Inchange Semiconductor Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2395

2SD2395

Abstract: 2SB1566
Contextual Info: Inchange Semiconductor Product Specification 2SD2395 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SB1566 PINNING PIN DESCRIPTION 1 Base 2 Collector

2sB1566 transistor

Abstract: 2SB1566 2SD2395
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1566 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Wide Area of Safe Operation

2SB1566

Abstract: 2SD2395
Contextual Info: JMnic Product Specification 2SB1566 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2395 PINNING PIN

2SD2395

Abstract: 2SB1566
Contextual Info: SavantIC Semiconductor Product Specification 2SD2395 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SB1566 PINNING PIN DESCRIPTION 1 Base 2 Collector

Contextual Info: , Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1566 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- X : V(BR)CEo= -50V(Min) • Low Collector Saturation Voltage: VCE(Sa,)= -1.0V(Max)@ (lc= -2A, IB= -0.2A)

2SD2395

Abstract: 2sb1566
Contextual Info: 2SB1566 h ~7 y V Z- $ /Transistors 2 S B 1 5 6 X k ° $ * ' > 7 ^ 7 I s - P N P y ij 6 h7>yz$ Epitaxial Planar PNP Silicon Transistor • Jilj/£11;fritllfi£ ]/L o w Freq. Power Amp. • 1 rfjiEO/Dim ensions U n it: mm) VC E(sat) io n :;:; V c E ( s a t ) = - 0 . 3 V (T y p .)

2SC5248

Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
Contextual Info: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F

2SD2395

Abstract: 2SB1566
Contextual Info: 2SD2395 Transistors For Power Amplification 50V, 3A 2SD2395 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Low VCE (sat). 2) Wide SOA. 12.0 10.0 0.8 (1)Base

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2SB1185

Abstract: 2sb1569a 2sd2037 transistor
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SB1335A

Abstract: 2sd2033a 2SD2061 2SB1496 2SD2037 2sd2396 2SA1757 2SB1370 2SB1616 2SD2033
Contextual Info: Transistors T0-220 •TO-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

sj 2038

Abstract: 2SB1335A 2SD2061 2SB1496 2SD2037 2sd2396 2SD2039 2SB1370 2SC4354 2sd2033a
Contextual Info: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2n4401 331

Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
Contextual Info: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SD2159

Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
Contextual Info: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise

Mosfet FTR 03-E

Abstract: mt 1389 fe 2SD122 dtc144gs low noise Darlington Transistor DTC114EVA DTC143EF V/65e9 transistor transistor 2SC337
Contextual Info: h 7 > y ^ £ / T ra n sisto rs h 7 > v * £ IÜ á q — J W / T r a n s is t o r s S u m m a ry • POWER MOSFET Application Part No 2SK1976 V dss V 2SK2176 Package Typ (Q ) V gs (V) Page Id (A) 450 5 30 1.0 10 2.5 TO-220FP 88 60 10 30 0 08 10 5 TO-220FP