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    2SB1240 Search Results

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    2SB1240 Price and Stock

    ROHM Semiconductor 2SB1240TV2Q

    TRANS PNP 32V 2A ATV
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    DigiKey 2SB1240TV2Q Ammo Pack 2,500
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    • 10000 $0.25963
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    ROHM Semiconductor 2SB1240TV2R

    TRANS PNP 32V 2A ATV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB1240TV2R Ammo Pack 2,500
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    ROHM Semiconductor 2SB1240TV2P

    TRANS PNP 32V 2A ATV
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    DigiKey 2SB1240TV2P Ammo Pack 2,500
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    Others 2SB1240

    TRANSISTOR,BJT,PNP,32V V(BR)CEO,2A I(C),SIP
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    Quest Components 2SB1240 162
    • 1 $3.54
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    • 100 $1.77
    • 1000 $1.534
    • 10000 $1.534
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    ROHM Semiconductor 2SB1240

    IN STOCK SHIP TODAY
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    Component Electronics, Inc 2SB1240 26
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    2SB1240 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1240 ROHM Medium power Transistor(- 32V, -2A) Original PDF
    2SB1240 ROHM Medium power transistor (-32V, -2A) Original PDF
    2SB1240 Various Russian Datasheets Transistor Original PDF
    2SB1240 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1240 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1240 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1240 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1240 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1240 ROHM ATR, ATV Transistors Scan PDF
    2SB1240 ROHM ATR / ATV Transistors Scan PDF
    2SB1240P ROHM Medium Power Transistor (-32V -2A) Scan PDF
    2SB1240Q ROHM Medium Power Transistor (-32V -2A) Scan PDF
    2SB1240R ROHM Medium Power Transistor (-32V -2A) Scan PDF
    2SB1240TV2P ROHM TRANS DRIVER PNP 32V 2A ATV TB Original PDF
    2SB1240TV2P ROHM Medium Power Transistor (-32 V, -2 A) Original PDF
    2SB1240TV2Q ROHM Driver Transistor; Package: ATV; Constitution materials list: Packing style: Ammo Box; Package quantity: 2500; Original PDF
    2SB1240TV2Q ROHM Medium Power Transistor (-32 V, -2 A) Original PDF
    2SB1240TV2R ROHM TRANS DRIVER PNP 32V 2A ATV TB Original PDF
    2SB1240TV2R ROHM Medium Power Transistor (-32 V, -2 A) Original PDF

    2SB1240 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SB124060ML 2SB124060ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB124060ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching


    Original     		PDF 2SB124060ML 2SB124060ML 2SB124060MLYY

    Untitled

    Abstract: No abstract text available
    Text: 2SB124060ML 2SB124060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB124060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø


    Original     		PDF 2SB124060ML 2SB124060ML 2SB124060MLYY 161dice/wafer

    Untitled

    Abstract: No abstract text available
    Text: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Dimensions (Unit : mm) 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


    Original     		PDF 2SB1182 2SB1240 2SD1758 2SD1862. 2SB1182 65Max. SC-63 R1010A

    2SB1240

    Abstract: transistor 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 zExternal dimensions (Unit : mm) 2SB1182 (2) (3) 0.5±0.1 0.4±0.1 1.5±0.1 0.1 0.4+ −0.05 0.4±0.1 1.5±0.1 2.3+0.2 −0.1 C0.5 0.65±0.1 0.75 9.5±0.5


    Original     		PDF 2SB1188 2SB1182 2SB1240 2SB1182 2SB1188 2SD1766 2SD1758 2SB1240 transistor 2SB1240 2SD1862 T100

    2SB1182

    Abstract: 2SB1240 2SD1758 2SD1862
    Text: Medium power transistor 32V, 2A 2SB1182 / 2SB1240 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. 2SB1182 2SB1240 2.5±0.2 0.5±0.1 1.0 9.5±0.5 1.5 2.5 0.65±0.1


    Original     		PDF 2SB1182 2SB1240 2SD1758 2SD1862. 2SB1182 65Max. SC-63 R1010A 2SB1240 2SD1862

    Untitled

    Abstract: No abstract text available
    Text: 2SB124040ML 2SB124040ML 肖特基二极管芯片 描述 Ø 2SB124040ML是采用硅外延工艺制造的肖特 基二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；


    Original     		PDF 2SB124040ML 2SB124040MLYY 161dice/wafer DO-41

    2sb1240

    Abstract: 2sb118 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05


    Original     		PDF 2SB1188 2SB1182 2SB1240 2SB1182 SC-62 SC-63 2sb1240 2sb118 2SD1758 2SD1766 2SD1862 T100

    Untitled

    Abstract: No abstract text available
    Text: 2SB124040ML 2SB124040ML SCHOTTKY BARRIER DIODE CHIPS Ø 2SB124040ML is a schottky barrier diode chips Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching


    Original     		PDF 2SB124040ML 2SB124040ML 2SB124040MLYY

    2SB1188

    Abstract: No abstract text available
    Text: 2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor −32V, −2A 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 2.3 +0.2 −0.1 9.5±0.5 1.5 0.5±0.1 0.65±0.1 0.75 0.1 0.4 + −0.05


    Original     		PDF 2SB1188 2SB1182 2SB1240 2SD1766 2SD1758 2SD1862 2SB1188

    2SB1240

    Abstract: 2SB1182 2SB1188 2SD1758 2SD1766 2SD1862 T100
    Text: Medium power transistor 32V, 2A 2SB1188 / 2SB1182 / 2SB1240 Dimensions (Unit : mm) 2SB1182 1.0±0.2 (3) 0.5±0.1 0.4±0.1 1.5±0.1 +0.1 0.4−0.05 0.4±0.1 1.5±0.1 1.5 0.65±0.1 0.75 2.3+0.2 −0.1 0.5±0.1 2.5 (2) C0.5 9.5±0.5 6.5±0.2 5.1+0.2


    Original     		PDF 2SB1188 2SB1182 2SB1240 2SB1182 2SB1188 2SD1766 2SD1758 2SD1862. R0039A 2SB1240 2SD1862 T100

    transistor

    Abstract: 2sb1240 2SD1189F SD1227 2SB822 2SB1277 2SB1182 transistor 2SB1240 silicon pnp transistor transistor 2A
    Text: Transistors Medium power Transistor *32V,*2A 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.


    Original     		PDF 2SB1188 2SB1182 2SB1240 2SB822 2SB1277 2SB911M 2SD1766 2SD1758 2SD1862 2SD1189F transistor SD1227 transistor 2SB1240 silicon pnp transistor transistor 2A

    2SD1758

    Abstract: 2SB1240 96-217-B24 2SD1055 2SD1919 transistor 257 2SD1227M 2SB1188 2SB911 transistor 2SD1862
    Text: Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M


    Original     		PDF 2SD1766 2SD1758 2SD1862 2SD1055 2SD1919 2SD1227M 2SB1188 2SB1182 2SB1240 2SB891F 96-217-B24 transistor 257 2SD1227M 2SB911 transistor 2SD1862

    silan

    Abstract: No abstract text available
    Text: 2SB124040ML 2SB124040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB124040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø


    Original     		PDF 2SB124040ML 2SB124040ML 2SB124040MLYY 161dice/wafer silan

    2sb1240

    Abstract: transistor 2SB1240
    Text: SPICE PARAMETER 2SB1240 by ROHM TR Div. * 2SB1240 PNP BJT model * Date: 2006/11/24 .MODEL 2SB1240 PNP + IS=600.00E-15 + BF=207.37 + VAF=16.367 + IKF=5.4337 + ISE=600.00E-15 + NE=1.3729 + BR=102.31 + VAR=100 + IKR=92.045E-3 + ISC=97.084E-12 + NC=1.4840 + NK=.7623


    Original     		PDF 2SB1240 Q2SB1240 00E-15 045E-3 084E-12 000E-3 161E-3 26E-12 2sb1240 transistor 2SB1240

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2SD1862

    Abstract: 2SB1240 2SB1182 2SB1188 2SD1758 2SD1766 T100
    Text: 2SD1766 / 2SD1758 / 2SD1862 Transistors Medium Power Transistor 32V, 2A 2SD1766 / 2SD1758 / 2SD1862 zExternal dimensions (Unit : mm) 2SD1758 (3) 0.4 +0.1 −0.05 0.5±0.1 0.4±0.1 1.5±0.1 0.65±0.1 0.75 0.9 2.3±0.2 Abbreviated symbol : DB∗ ROHM : MPT3


    Original     		PDF 2SD1766 2SD1758 2SD1862 2SD1758 SC-62 2SD1766 2SB1188 2SD1862 2SB1240 2SB1182 T100

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    2SB911M

    Abstract: 2SB1240
    Text: h 7 > y Z 5 t / T ransistors 2 S B 9 1 1 M A Q n j O A fl 2SB911M/2SB1240 x , =:e5l * > ' ' 7J l ' 7 ° l ' - J - B P N P y ' j 3 > h 7 > y 7 ^ Power Amp. Epitaxial Planar PNP Silicon Transistors • • ÿHfé-sJ’JÉBI/Dimensions Unit : mm 1) Pc = 1 W


    OCR Scan     		PDF 2SB911M/2SB1240 2SD1227M/2SD1862£ 2SB911M 2SB1240 2SB1240

    2SB891

    Abstract: 2SB1240 2SB911 2SB1182 2SB1188 2SB891F 2SD1766 TO-126F BC 390 Transistor 1-02R
    Text: Transistors Medium power Transistor -32V, -2A 2SB1188/2SB1182/2SB1240/2SB891 F/ 2SB822/2SB1277/2SB911M • E x t e r n a l d im e n s io n s (U nits: m m ) •F e a tu re s 1) LOW VcE(sat). 2SB1182 2SB1188 VcE(sat) = - 0 . 5 V (Typ.) (Ic / I b = - 2 A / - 0 . 2 A )


    OCR Scan     		PDF 2SB1188/2SB1182/2SB1240/2SB891F/ 2SB822/2SB1277/2SB911M 2SD1766/ 2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD19192/SD1227M. 2SB1188 2SB1182 SC-62 2SB1240 2SB891F 2SB891 2SB1240 2SB911 2SB1182 2SB1188 2SB891F 2SD1766 TO-126F BC 390 Transistor 1-02R

    2SB1240

    Abstract: No abstract text available
    Text: 2SB1240 Transistor, PNP Features Dimensions Units : mm • available in ÀTV TV2 package • high power: Pq = I V J • low collector saturation voltage, typically VCE(sat) - 0.2 V at Ic/Ib = lA/—0.1 A complementary pair with 2SD1862 • 2SB1240 (ATV TV2)


    OCR Scan     		PDF 2SB1240 2SD1862 2SB1240

    Untitled

    Abstract: No abstract text available
    Text: 7526^ 40E D ROHM CO LTD OODSSOT b H R H M 2SB911M/2SB1240 h s7 > y Z . $ /Transistors - 1- T~27-2\ 2 S B 2 S B 9 1 1 M 1 2 4 p ° w e r A m p- Epitaxial Planar PNP Silicon Transistors • f t p \jr j£ III/'D im e n s io n s U n it : m m h y


    OCR Scan     		PDF 2SB911M/2SB1240 2SD1227M, 2SD1862.

    D1227M

    Abstract: 2SB911 2SB1240
    Text: 2SB911M/2SB1240 / T ransistors 2 2 S S B B 9 1 1 M 1 2 4 0 Epitaxial Planar PNP Silicon Transistors 4,^ ^ lS lllSffl/M edium Power Amp. 2 • £H fi-+j£| /D im en sio ns U n it: mm) • <Mk 1) Pc W i i ' . Pc=iw 2) VcE(sat) V c E (s a t)= -0 .2 V (T y p .)


    OCR Scan     		PDF 2SB911M/2SB1240 D1227M 2SB911 2SB1240

    2SB1232

    Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
    Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004


    OCR Scan     		PDF 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226

    2SB909M

    Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
    Text: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p


    OCR Scan     		PDF 2SA937AMLN 2SC2021MLN 2SA937AM 2SA1547A 2SC2021M 2SC4010 2SC4776M 2SC4778 2SA874M 2SA1548 2SB909M 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2Sc4776 2SB1130