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    2SB1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SB1115A-T1-AZ Renesas Electronics Corporation Small Signal Bipolar Transistors, POMM, / Visit Renesas Electronics Corporation
    2SB1025DJTR-E Renesas Electronics Corporation Small Signal Bipolar Transistors, UPAK, / Visit Renesas Electronics Corporation
    2SB1149-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SB1691WL-TL-E Renesas Electronics Corporation Small Signal Bipolar Transistors, MPAK, / Visit Renesas Electronics Corporation
    2SB1261(0)-Z-E1-AY Renesas Electronics Corporation Bipolar Power Transistors, MP-3Z, / Visit Renesas Electronics Corporation
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    2SB1 Price and Stock

    ROHM Semiconductor 2SB1694T106

    TRANS PNP 30V 1A UMT3
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    DigiKey 2SB1694T106 Digi-Reel 28,019 1
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    Mouser Electronics 2SB1694T106 4,983
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    TTI 2SB1694T106 Reel 27,000 3,000
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    TME 2SB1694T106 1
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    Ameya Holding Limited 2SB1694T106 90 1
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    CoreStaff Co Ltd 2SB1694T106 600
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    2SB1694T106 34
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    ROHM Semiconductor 2SB1275TLP

    TRANS PNP 160V 1.5A CPT3
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    DigiKey 2SB1275TLP Digi-Reel 2,398 1
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    Avnet Asia 2SB1275TLP 24 Weeks 2,500
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    Avnet Silica 2SB1275TLP 27 Weeks 2,500
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    Chip One Stop 2SB1275TLP Cut Tape 7,179 0 Weeks, 1 Days 5
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    CoreStaff Co Ltd 2SB1275TLP 2,440
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    2SB1275TLP 1,345
    • 1 $0.762
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    ROHM Semiconductor 2SB1132T100R

    TRANS PNP 32V 1A MPT3
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    DigiKey 2SB1132T100R Cut Tape 1,188 1
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    2SB1132T100R Digi-Reel 1,188 1
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    EVVO Semiconductor 2SB1132

    TRANS PNP 32V 1A SOT-89
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    2SB1132 Digi-Reel 870 1
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    ROHM Semiconductor 2SB1386T100R

    TRANS PNP 20V 5A MPT3
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    DigiKey 2SB1386T100R Digi-Reel 785 1
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    Newark 2SB1386T100R Cut Tape 117 1
    • 1 $0.874
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    • 100 $0.385
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    Bristol Electronics 2SB1386T100R 5
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    Avnet Asia 2SB1386T100R 24 Weeks 1,000
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    Avnet Silica 2SB1386T100R 13 Weeks 1,000
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    Win Source Electronics 2SB1386T100R 336,000
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    2SB1 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB10 General Instrument Bridge Rectifier Cross Reference Guide Scan PDF
    2SB100 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB100 General Instrument Bridge Rectifier Cross Reference Guide Scan PDF
    2SB100 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB100 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB100 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB100 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB100 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB100 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    2SB100 Unknown Cross Reference Datasheet Scan PDF
    2SB100 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SB1000 Kexin Silicon PNP Epitaxial Original PDF
    2SB1000 TY Semiconductor Silicon PNP Epitaxial - SOT-89 Original PDF
    2SB1000 Hitachi Semiconductor LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366 Scan PDF
    2SB1000 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1000 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1000 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1000 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1000 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ...

    2SB1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRANSISTOR SMD 1a 9

    Abstract: 2SB1275 50MHZ
    Text: Transistors SMD Type Power Transistor 2SB1275 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High transition frequency. fT = 50MHZ +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		2SB1275 O-252 50MHZ) -160V) -120V 30MHz TRANSISTOR SMD 1a 9 2SB1275 50MHZ PDF

    2SB1086A

    Abstract: 2SD1563A
    Text: Inchange Semiconductor Product Specification 2SB1086A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD1563A ・Low collector saturation voltage ・Large current capability APPLICATIONS ・Designed for use in low frequency


    Original     		2SB1086A O-126 2SD1563A -120V; 2SB1086A 2SD1563A PDF

    2SB1589

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1589 Features Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine


    Original     		2SB1589 2SB1589 PDF

    smd marking BA

    Abstract: 2sb111 2SB1118
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1118 Features Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter


    Original     		2SB1118 -100mA -10mA -50mA smd marking BA 2sb111 2SB1118 PDF

    2SB1073

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1073 Features Low collector-emitter saturation voltage VCE sat Large peak collector current ICP Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine


    Original     		2SB1073 Char-10 2SB1073 PDF

    2SB1587

    Abstract: audio Darlington 6A 2SD2438
    Text: Inchange Semiconductor Product Specification 2SB1587 Silicon PNP Darlington Power Transistors ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SD2438 APPLICATIONS ・Audio, Series Regulator and General Purpose PINNING PIN DESCRIPTION 1 Base 2


    Original     		2SB1587 2SD2438 2SB1587 audio Darlington 6A 2SD2438 PDF

    2SB1335

    Abstract: 2sd1855
    Text: Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1855 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING


    Original     		2SB1335 O-220Fa 2SD1855 2SB1335 2sd1855 PDF

    2SB1119

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1119 Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25


    Original     		2SB1119 -500mA -50mA 2SB1119 PDF

    2SB1205

    Abstract: strobe ic 555
    Text: Transistors SMD Type Strobe High-Current Switching Applications 2SB1205 TO-252 Features 6.50 +0.2 5.30-0.2 Low saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1


    Original     		2SB1205 O-252 -500mA -60mA 2SB1205 strobe ic 555 PDF

    2SD1414

    Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 2SB1024
    Text: Inchange Semiconductor Product Specification 2SD1414 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1024 ·DARLINGTON APPLICATIONS ·Power amplifier and switching applications


    Original     		2SD1414 O-220Fa 2SB1024 O-220Fa) 2SD1414 HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON 2SB1024 PDF

    2SB1015

    Abstract: 2sB1015 y 2SD1406
    Text: Inchange Semiconductor Product Specification 2SB1015 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Collector power dissipation :PC=25W@TC=25℃ ・Low collector saturation voltage ・Complement to type 2SD1406 APPLICATIONS ・For audio frequency power amplifier


    Original     		2SB1015 O-220Fa 2SD1406 2SB1015 2sB1015 y 2SD1406 PDF

    2SD1913

    Abstract: 2SB1274
    Text: Inchange Semiconductor Product Specification 2SD1913 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS


    Original     		2SD1913 O-220F 2SB1274 O-220F) 2SD1913 2SB1274 PDF

    BD transistor

    Abstract: smd marking BD 2SB1189 BD marking
    Text: Transistors SMD Type Medium Power Transistor 2SB1189 Features High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -80 V Collector-emitter Voltage VCEO -80


    Original     		2SB1189 -500mA -50mA 100MHz BD transistor smd marking BD 2SB1189 BD marking PDF

    2SD1832

    Abstract: 2SB1292
    Text: Inchange Semiconductor Product Specification 2SB1292 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1832 ・Excellent DC current gain characteristics ・Wide area of safe operation


    Original     		2SB1292 O-220Fa 2SD1832 2SD1832 2SB1292 PDF

    2SB1052

    Abstract: 2SD1480 IC 4090
    Text: Inchange Semiconductor Product Specification 2SB1052 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1480 ・Low collector saturation voltage APPLICATIONS ・For power amplifier applications PINNING PIN DESCRIPTION


    Original     		2SB1052 O-220Fa 2SD1480 2SB1052 2SD1480 IC 4090 PDF

    2SD1411

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1411 INDUSTRIAL APPLICATIONS Unit in n HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 0 3 .J± Q 2 FEAT U R E S : . Low Saturation Voltage : v CE sat = 0-5V(Max.) at Ic=4A . Complementary to 2SB1018 MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		2SD1411 2SB1018 2SD1411 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1018 SILICON PNP EPITAXIAL PLANAR TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. PO W ER AMPLIFIER APPLICATIONS. • • • High Collector Current : I q = —7A Low Collector Saturation Voltage : v CE sat = -0.5V (M ax.) at Ic = -4 A


    OCR Scan     		2SB1018 2SD1411 2-10L1A PDF

    100w audio amplifier

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1429 Transistor Unit in mm Silicon PNP Epitaxial Type PCT Process Power Amplifier Applications Features • Com plem entary to 2SD 2155 • Recom m end for 100W High Fidelity Audio Frequency - Amplifier O utput Stage Absolute Maximum Ratings (Ta = 25 C)


    OCR Scan     		2SB1429 2SD2155 100w audio amplifier PDF

    2SB1015

    Abstract: IC 4025
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1015 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 10.3MAX. FEATURES: . Low Collector Saturation Voltage = VcE sat =-1.7V(Max.) at IC=-3A, IB=-0.3A . Collector Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SD1406


    OCR Scan     		2SB1015 2SD1406 -50mA, 2SB1015 IC 4025 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		2SD2449 2SB1594 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1020 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. I Q 3 MAX. 7.0 FEA TU R ES: . High DC Current Gain: hpE=2000(Min.) (at V c e =-3V, Ic =-3A


    OCR Scan     		2SB1020 2SD1415. PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1557- SILICON PNP EPITAXIAL TYPE DARLINGTON POWER U nit in mm POW ER AM PLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2 S D 2 3 8 6 03.2*0.2 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		2SB1557· --140V 2-16C1A PDF

    2SB1016

    Abstract: 1C13MAX
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1016 POWER AMPLIFIER APPLICATIONS. Unit in mm 1C13MAX. 0z.2±az FEATURES: . High Breakdown Voltage : V -.gQ=-100V :i2 . Low Collector-Emitter Saturation Voltage : ^CE(sat =-2 .OV(Max.) . Complementary to 2SD1407 . Recommended for 30W High-Fidelity Audio Frequency


    OCR Scan     		2SB1016 1C13MAX. -100V 2SD1407 Q76-CU5 -50mA, 2SB1016 1C13MAX PDF

    2SB1562

    Abstract: No abstract text available
    Text: 2SB1562- SILICON PNP EPITAXIAL TYPE DARLINGTON POWER POW ER AM PLIFIER APPLICATIONS • • U n it in m m High DC Current Gain. : hFE = 300~1000(V cE =-5V , Ic = -0 .5 A ) Low Collector Saturation Voltage. : VCE (sat) = -0.5V (TYP.) (IC = -2A , IB = -20mA)


    OCR Scan     		2SB1562· -20mA) 2SB1562 2SB1562 PDF